FDB8442_F085 [FAIRCHILD]
Power Field-Effect Transistor, 28A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3;
| 型号： | FDB8442_F085 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 28A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3 开关 晶体管 |
| 文件： | 总7页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2010
FDB8442_F085
®
N-Channel PowerTrench MOSFET
40V, 80A, 2.9mΩ
Features
Applications
Automotive Engine Control
Typ rDS(on) = 2.1mΩ at VGS = 10V, ID = 80A
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Typ Qg(10) = 181nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
Integrated Starter / Alternator
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Distributed Power Architectures and VRMs
Primary Switch for 12V Systems
RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDB8442_F085 Rev. A1
1
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MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
VGS
±20
V
Drain Current Continuous (TC<158 oC, VGS = 10V)
Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
80
28
ID
A
See Figure 4
720
EAS
PD
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/oC
oC
Power Dissipation
Derate above 25oC
254
1.7
TJ, TSTG Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-263, lin2 copper pad area
0.59
43
oC/W
oC/W
RθJA
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
800 units
FDB8442
FDB8442_F085
TO-263AB
330mm
24mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
40
-
-
-
-
-
-
V
1
VDS = 32V
IDSS
µA
nA
V
GS = 0V
TJ = 150°C
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250µA
D = 80A, VGS = 10V
2
-
2.9
2.1
4
V
I
2.9
rDS(on)
Drain to Source On Resistance
ID = 80A, VGS = 10V,
TJ = 175°C
mΩ
-
3.6
5.0
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
-
-
-
-
-
-
-
-
-
12200
1040
640
1.0
-
pF
pF
pF
Ω
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
-
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
-
235
30
-
Qg(TOT) Total Gate Charge at 10V
181
23
nC
nC
nC
nC
nC
Qg(TH)
Qgs
Threshold Gate Charge
VGS = 0 to 2V
VDD = 20V
ID = 80A
Ig = 1mA
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
49
Qgs2
Qgd
26
-
41
-
FDB8442_F085 Rev. A1
2
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
62
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
19.5
19.3
57
-
-
VDD = 20V, ID = 80A
VGS = 10V, RGS = 2Ω
td(off)
tf
-
-
17.2
-
toff
118
Drain-Source Diode Characteristics
I
SD = 80A
-
-
-
-
0.9
0.8
49
1.25
1.0
64
V
V
VSD
Source to Drain Diode Voltage
ISD = 40A
trr
Reverse Recovery Time
Reverse Recovery Charge
IF = 75A, di/dt = 100A/µs
IF = 75A, di/dt = 100A/µs
ns
nC
Qrr
70
91
Notes:
o
1: Starting T = 25 C, L = 0.35mH, I = 64A
J
AS
2: Pulse width = 100s.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDB8442_F085 Rev. A1
3
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Typical Characteristics
300
250
200
150
100
50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
P
DM
0.1
0.01
1E-3
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
TC = 25oC
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
100
10
175 - TC
I = I25
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDB8442_F085 Rev. A1
4
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Typical Characteristics
500
100
4000
1000
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
≠ 0
10us
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
100us
100
STARTING TJ = 25oC
10
10
1
LIMITED
BY PACKAGE
STARTING TJ = 150oC
1ms
1
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
= MAX RATED
10ms
DC
o
T
C
= 25 C
0.1
5000
1000
0.01
0.1
1
10
100
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
160
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V
V
DD = 5V
VGS = 5V
120
120
80
40
0
VGS = 4.5V
TJ = 175oC
TJ = 25oC
80
TJ = -55oC
40
VGS = 4V
0
0
1
2
3
4
5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
50
1.8
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
40
TJ = 175oC
30
20
10
0
TJ = 25oC
ID = 80A
VGS = 10V
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8442_F085 Rev. A1
5
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Typical Characteristics
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
ID = 250µA
VGS = VDS
ID = 250µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
40000
10
Ciss
ID = 80A
8
10000
VDD = 15V
VDD = 20V
Coss
6
VDD = 25V
1000
4
2
0
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
50
0
50
100
150
200
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
FDB8442_F085 Rev. A1
6
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®
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™
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®
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Definition
Datasheet contains the design specifications for product development. Specifications may change in
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Advance Information
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Rev. I48
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