FDB8443 [ONSEMI]
N 沟道 PowerTrench® MOSFET 40V，182A，3mΩ;
| 型号： | FDB8443 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 40V，182A，3mΩ |
| 文件： | 总8页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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March 2013
FDB8443
tm
®
N-Channel PowerTrench MOSFET
40 V, 182 A, 3.0 mΩ
Features
Applications
RDS(on) = 2.3 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A
Power Tools
QG(tot) = 142 nC ( Typ.)
Motor drives and Uninterruptible Power Supplies
Synchronous Rectification
Low Miller Charge, QGD = 32 nC( Typ.)
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
Battery Protection Circuit
D
G
D2-PAK
S
(TO-263)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
FDB8443
40
Unit
V
Drain to Source Voltage
Gate to Source Voltage
VGS
±20
V
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Continuous (TA = 25oC, RθJA = 43oC/W)
- Pulsed
182*
129*
ID
Drain Current
120
A
25
IDM
Drain Current
See Figure 4
531
EAS
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/oC
oC
Power Dissipation
Derate above 25oC
188
PD
1.25
TJ, TSTG Operating and Storage Temperature
-55 to +175
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance Junction to Case, Max.
Thermal Resistance Junction to Ambient, Max.
FDB8443
Unit
oC/W
oC/W
oC/W
0.8
62
43
RθJA
(Note 2)
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area, Max.
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB8443
FDB8443
TO-263AB
330mm
24mm
800 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
1
V
V
DS = 32V,
μA
nA
VGS = 0V
TC = 150oC
-
-
250
±100
IGSS
VGS = ±20V
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
2
-
2.8
2.3
4
V
ID = 80A, VGS= 10V
3.0
mΩ
I
D = 80A, VGS= 10V,
-
4.2
5.5
TJ = 175oC
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
9310
800
510
0.9
-
pF
pF
pF
Ω
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
-
Reverse Transfer Capacitance
Gate Resistance
-
RG
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
-
185
23
-
Qg(TOT)
Qg(TH)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
142
17.5
36
nC
nC
nC
nC
nC
VGS = 0 to 2V
VDD = 20V
D = 35A
Ig = 1mA
I
Qgs2
Qgd
18.8
32
-
-
Switching Characteristics (VGS = 10V)
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
58
ns
ns
ns
ns
ns
ns
18.4
17.9
55
-
VDD = 20V, ID = 35A
-
V
GS = 10V, RGS = 2Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
13.5
-
toff
Turn-Off Time
109
Drain-Source Diode Characteristics
I
SD = 35A
-
-
-
-
0.8
0.8
42
1.25
1.0
55
VSD
Source to Drain Diode Voltage
V
ISD = 15A
trr
Reverse Recovery Time
ns
ISD = 35A, dISD/dt = 100A/μs
Qrr
Reverse Recovery Charge
48
62
nC
Notes:
o
1: Starting T = 25 C, L = 0.26mH, I = 64A.
J
AS
2: Pulse width = 100s.
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
2
www.fairchildsemi.com
Typical Characteristics
200
150
100
50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
VGS = 10V
TRANSCONDUCTANCE
TC = 25oC
FOR TEMPERATURES
MAY LIMIT CURRENT
IN THIS REGION
ABOVE 25oC DERATE PEAK
1000
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
100
SINGLE PULSE
10
10
10
10
1
10
-5
-4
-3
-2
-1
10
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
3
www.fairchildsemi.com
Typical Characteristics
500
100
1000
100
10
If R = 0
= (L)(I )/(1.3*RATED BV
10us
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
STARTING TJ = 25oC
LIMITED
BY PACKAGE
10
1
1ms
STARTING TJ = 150oC
1
10ms
DC
SINGLE PULSE
OPERATION IN THIS
T
J
= MAX RATED
AREA MAY BE
LIMITED BY r
o
DS(on)
T
C
= 25
C
0.1
0.01
0.1
1
10
100
1000 5000
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
160
200
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
160
V
DD = 5V
120
80
40
0
VGS = 5V
TJ = 175oC
VGS = 4.5V
120
TJ = 25oC
TJ = -55oC
80
40
VGS = 4V
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
80
2.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
40
20
0
TJ = 25oC
TJ = 175oC
ID = 80A
VGS = 10V
3
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE( C)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
4
www.fairchildsemi.com
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = 250μA
I
D
= 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
20000
ID = 35A
Ciss
10000
VDD = 15V
VDD = 20V
8
6
4
2
0
Coss
VDD = 25V
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
50
1
10
0
20
40
60
80 100 120 140 160
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
5
www.fairchildsemi.com
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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Global Power Resource
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Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Sync-Lock™
®*
®
tm
®
®
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
SM
TinyBoost™
TinyBuck™
TinyCalc™
®
®
TinyLogic
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®
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
®
TranSiC
®
and Better™
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TriFault Detect™
TRUECURRENT *
μSerDes™
®
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FAST
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®
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Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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