FDD3672_11 [FAIRCHILD]
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ; N沟道UltraFET沟槽MOSFET 100V ， 44A ， 28mΩ
| 型号： | FDD3672_11 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ |
| 文件： | 总6页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2011
FDD3672_F085
N-Channel UltraFET Trench MOSFET
100V, 44A, 28mΩ
Applications
Features
DC/DC converters and Off-Line UPS
Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Typ Qg(10) = 24nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
FDD3672_F085 Rev. C
1
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MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
100
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
VGS
±20
Drain Current Continuous (TC < 30oC, VGS = 10V)
44
ID
A
Pulsed
See Figure 4
73
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25oC
(Note 1)
mJ
W
W/oC
oC
144
0.96
TJ, TSTG Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper
pad area
1.04
52
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
FDD3672
FDD3672_F085
TO-252AA
330mm
16mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
100
-
-
-
-
-
1
V
V
DS = 80V, VGS = 0V
TJ = 150oC
-
-
-
μA
nA
250
±100
IGSS
VGS = ±20V
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
D = 44A, VGS= 10V
2
-
3
4
V
Ω
Ω
Ω
I
0.024
0.028
0.063
0.028
0.047
0.074
ID = 21A, VGS= 6V,
-
ID = 44A, VGS= 10V, TJ = 175°C
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1635
240
60
-
-
pF
pF
pF
nC
nC
nC
nC
nC
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
-
Qg(TOT)
Qg(TH)
Qgs
VGS = 0 to 10V
24
36
4.5
-
VGS = 0 to 2V
3
V
I
DD = 50V
D = 44A
Ig = 1.0mA
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
8.3
5.3
5.8
Qgs2
Qgd
-
-
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FDD3672_F085 Rev. C
2
Electrical Characteristics TJ = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
78
-
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
12
37
24
44
-
-
V
V
DD = 50V, ID = 44A,
GS = 10V, RGS = 11Ω
td(off)
tf
-
-
toff
70
Drain-Source Diode Characteristics
I
SD = 44A
-
-
-
-
0.9
0.8
44
1.25
1.0
57
V
V
VSD
Source to Drain Diode Voltage
ISD = 21A
trr
Reverse Recovery Time
ns
nC
IF = 44A, dISD/dt = 100A/μs
Qrr
Reverse Recovery Charge
58
76
Notes:
o
1: Starting T = 25 C, L = 0.2mH, I = 27A
J
AS
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
www.fairchildsemi.com
FDD3672_F085 Rev. C
3
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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FDD3672_F085 Rev. C
4
Typical Characteristics
100
10
1
200
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
10
STARTING TJ = 25oC
SINGLE PULSE
T
J
= MAX RATED
o
T
C
= 25
C
1
1ms
STARTING TJ = 150oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
10ms
DC
0.1
0.001
0.01
0.1
1
10
100
1
10
100
300
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
80
80
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
VDD = 5V
60
60
40
20
0
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
40
20
0
TJ = 25oC
TJ = 175oC
TJ = -55oC
0
1
2
3
4
5
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
100
80
60
40
20
0
3.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 44A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.6
TJ = 175oC
TJ = 25oC
ID = 44A
VGS = 10V
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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FDD3672_F085 Rev. C
5
Typical Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS = VDS
ID = 5mA
I
D
= 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
10000
ID = 44A
VDD = 50V
8
Ciss
VDD = 40V
1000
VDD = 60V
6
Coss
4
2
0
100
f = 1MHz
VGS = 0V
Crss
10
0.1
0
5
10
15
20
25
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
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FDD3672_F085 Rev. C
6
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