FDD6512A [FAIRCHILD]
20V N-Channel PowerTrench MOSFET; 20V N沟道PowerTrench MOSFET的
| 型号： | FDD6512A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 20V N-Channel PowerTrench MOSFET |
| 文件： | 总5页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2001
FDD6512A/FDU6512A
20V N-Channel PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
·
36 A, 20 V
RDS(ON) = 21 mW @ VGS = 4.5 V
RDS(ON) = 31 mW @ VGS = 2.5 V
·
·
·
Low gate charge (12 nC typical)
Fast switching
Applications
High performance trench technology for extremely
low RDS(ON)
·
·
DC/DC converter
Motor drives
D
D
G
S
I-PAK
(TO-251AA)
G
D-PAK
(TO-252)
G D S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
20
± 12
36
V
V
A
VGSS
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
ID
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
10.7
100
Pulsed
PD
W
Power Dissipation
@TC=25°C
@TA=25°C
@TA=25°C
43
(Note 1a)
(Note 1b)
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
3.5
40
96
RqJC
RqJA
RqJA
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape width
Quantity
FDD6512A
FDD6512A
FDU6512A
D-PAK (TO-252)
I-PAK (TO-251)
12mm
N/A
2500 units
75
FDU6512A
Tube
FDD6512A/FDU6512A Rev B (W)
Ó2001 Fairchild Semiconductor Corp.
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
IAS
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 10 V, ID=10A
90
10
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 mA
20
V
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
14
ID = 250 mA,Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 16 V,
VGS = 12 V,
VGS = 0 V
VDS = 0 V
10
mA
nA
nA
IGSSF
IGSSR
100
VGS = –12 V, VDS = 0 V
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 mA
0.6
50
0.8
1.5
V
Gate Threshold Voltage
Temperature Coefficient
–3.2
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 10.7 A
VGS = 2.5 V, ID = 9.1 A
VGS = 4.5 V, ID = 10.7 A, TJ=125°C
16
21
22
21
31
29
mW
ID(on)
gFS
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V,
VDS = 5 V
A
S
Forward Transconductance
ID = 10.7 A
50
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1082
277
pF
pF
pF
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
130
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
8
16
16
38
16
19
ns
ns
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 W
24
8
ns
ns
Qg
Qgs
Qgd
12
2
nC
nC
nC
VDS = 10V,
VGS = 4.5 V
ID = 10.7 A,
3
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.3
1.2
A
V
VSD
Drain–Source Diode Forward Voltage
0.72
VGS = 0 V, IS = 2.3 A
(Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a)
R
qJA = 40°C/W when mounted on a
b)
R
qJA = 96°C/W when mounted
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6512A/FDU6512A Rev. B (W)
Typical Characteristics
2.5
2
30
VGS = 4.5V
3.0V
2.5V
3.5V
25
20
15
10
5
VGS = 2.0V
2.0V
1.5
1
2.5V
3.0V
3.5V
4.0V
4.5V
0.5
0
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1.8
1.6
1.4
1.2
1
ID = 10.7A
VGS = 4.5V
ID = 5.4 A
TA
=
o
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
30
VGS = 0V
TA = -55oC
VDS = 5V
25oC
10
25
20
15
10
5
TA = 125oC
125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6512A/FDU6512A Rev. B (W)
Typical Characteristics
1800
1500
1200
900
600
300
0
5
ID = 10.7A
VDS = 5V
f = 1MHz
VGS = 0 V
10V
4
3
2
1
0
CISS
15V
COSS
CRSS
0
4
8
12
16
20
0
2
4
6
8
10
12
14
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
200
150
100
50
1000
100
10
,
SINGLE PULSE
RDS(ON)LIMIT
DR
AIN
CU
RR
EN
T
Rq = 96 °C/W
100
s
m
JA
TA
= 25°C
1ms
10ms
100ms
1s
(A)
10s
1
DC
VGS = 10V
SINGLE PULSE
RqJA = 96 oC/W
I D
0.1
0.01
TA = 25o
C
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.2
R
(t) = r(t) * R
JA
q
JA
q
0.1
0.01
0.1
R
=
96°C/W
JA
q
0.05
0.01
0.02
P(pk)
Single Pulse
t
1
t
2
0.001
T - T = P * R
(t)
JA
J
A
q
Duty Cycle, D = t / t
1
2
0.0001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6512A/FDU6512A Rev. B (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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