FDMA1430JP [FAIRCHILD]
Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A; 最大RDS（ON） = 90英里©在VGS = -4.5 V， ID = -2.9一
| 型号： | FDMA1430JP |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A |
| 文件： | 总8页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2013
FDMA1430JP
Integrated P-Channel PowerTrench® MOSFET and BJT
-30 V, -2.9 A, 90 mΩ
Features
General Description
This device is designed specifically as a single package solution
for loadswitching in cellular handset and other ultra-portable
applications. It features a 50 V NPN BJT and a 30 V P-ch Trench
MOSFET in the space saving MicroFET 2x2 package that offers
exceptional thermal performance for it's physical size and is well
suited to linear mode applications.
Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A
Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A
Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1 A
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2
Application
HBM ESD protection level > 2 kV typical (Note 3)
RoHS Compliant
Loadswitching
E
B
D
PIN 1
C
G
S
E
B
C
D
D
C
G
S
Top
Bottom
MicroFET 2x2
Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
-30
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±8
Drain Current
-Continuous
-Pulsed
TA = 25°C
(Note 1a)
-2.9
-12
ID
A
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
(Note 4)
(Note 5)
50
V
V
50
10
V
100
mA
mW
°C
PC
Collector Power Dissipation
Junction Temperature
Power Dissipation
200
TJ
150
TA = 25°C
TA = 25°C
(Note 1a)
(Note 1b)
1.5
PD
W
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient(MOSFET)
Thermal Resistance, Junction to Ambient(MOSFET)
(Note 1a)
(Note 1b)
86
°C/W
173
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7’’
Tape Width
8 mm
Quantity
143
FDMA1430JP
MicroFET 2x2
5000 units
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©2013 Fairchild Semiconductor Corporation
FDMA1430JP Rev.C1
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = -250 μA, referenced to 25 °C
-23
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -24 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-1
μA
μA
±1
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
-0.4
-0.6
2.4
-1
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = -250 μA, referenced to 25 °C
GS = -4.5 V, ID = -2.9 A
mV/°C
V
67
81
90
VGS = -2.5 V, ID = -2.6 A
VGS = -1.8 V, ID = -1.7 A
VGS = -1.5 V, ID = -1 A
130
170
240
98
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
114
VGS = -4.5 V, ID = -2.9 A,
TJ = 125 °C
102
11
133
gFS
VDS = -5 V, ID = -2.9 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
438
47
580
70
pF
pF
pF
VDS = -15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
41
60
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
4.8
4.4
67
10
10
ns
ns
V
V
DD = -15 V, ID = -1 A,
GS = -4.5 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
107
33
ns
21
ns
Qg
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
7.2
0.7
1.6
10
nC
nC
nC
VDD = -15 V, ID = -2.9 A,
GS = -4.5 V
Qgs
Qgd
V
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = -1.1 A
(Note 2)
-0.7
16
5
-1.2
29
V
ns
nC
IF = -2.9 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
10
BJT Characteristics
ICBO
hFE
Collector Cut-off Current
VCB = 40 V, IE = 0 A
VCE = 5 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
VCE = 10 V, IC = 5 mA
0.1
0.3
μA
DC Current Gain
68
VCE(sat)
fT
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
V
MHz
pF
V
250
3.7
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
VCE = 5 V, IC = 100 μA
VI(off)
VI(on)
R1
0.5
Input On Voltage
VCE = 0.2 V, IC = 5 mA
1.3
V
Input Resistor
4.7
0.1
kΩ
R1/R2
Resistor Ratio
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2
©2013 Fairchild Semiconductor Corporation
FDMA1430JP Rev.C1
Electrical Characteristics
Notes:
2
1. R
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by the
θJA
θJA
θJC
user's board design.
a. 86 °C/W when mounted on
a 1 in pad of 2 oz copper
b. 173 °C/W when mounted on
a minimum pad of 2 oz copper
2
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Guaranteed by Icbo
5. Guaranteed by Iceo
.
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3
©2013 Fairchild Semiconductor Corporation
FDMA1430JP Rev.C1
Typical Characteristics TJ = 25 °C unless otherwise noted
12
3
2
1
0
VGS = -4.5 V
VGS = -2.5 V
VGS = -3.5 V
VGS = -1.5 V
8
VGS = -1.8 V
VGS = -1.8 V
VGS = -2.5 V
VGS = -1.5 V
4
VGS = -4.5 V
VGS = -3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
0
4
8
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
400
300
200
100
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = -2.9 A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = -4.5 V
ID = -2.9 A
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
12
10
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
1
0.1
VDS = -5 V
TJ = 150 o
C
8
TJ = 25 oC
TJ = 150 o
C
0.01
4
TJ = 25 o
C
TJ = -55 o
C
0.001
0.0001
TJ = -55 o
C
0
0.5
1.0
1.5
2.0
2.5
0.0
0.4
0.8
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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4
©2013 Fairchild Semiconductor Corporation
FDMA1430JP Rev.C1
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
100
10
4.5
ID = -2.9 A
Ciss
VDD = -10 V
3.0
Coss
VDD = -15 V
Crss
VDD = -20 V
1.5
f = 1 MHz
= 0 V
V
GS
0.0
0
2
4
6
8
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
10-1
50
10
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
VDS = 0 V
100 μs
1
0.1
1 ms
TJ = 125 oC
THIS AREA IS
10 ms
100 ms
1 s
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
10 s
DC
0.01
0.001
R
θJA = 173 oC/W
A = 25 oC
CURVE BENT TO
MEASURED DATA
TJ = 25 o
C
T
0.1
1
10
100
0
3
6
9
12
15
-VGS, GATE TO SOURCE VOLTAGE (V)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure9. GateLeakagevsGate
to Source Voltage
Figure 10. Forward Bias Safe
Operating Area
1000
SINGLE PULSE
RθJA = 173 oC/W
100
10
1
T
A = 25 o
C
0.1
10-4
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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5
©2013 Fairchild Semiconductor Corporation
FDMA1430JP Rev.C1
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 173 oC/W
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
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©2013 Fairchild Semiconductor Corporation
FDMA1430JP Rev.C1
Dimensional Outline and Pad Layout
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7
©2013 Fairchild Semiconductor Corporation
FDMA1430JP Rev.C1
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Sync-Lock™
®*
®
tm
®
®
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
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™
SM
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®
®
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®
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®
TranSiC
®
and Better™
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TriFault Detect™
TRUECURRENT *
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®
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®
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FAST
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Datasheet contains the design specifications for product development. Specifications
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Not In Production
Rev. I64
©2013 Fairchild Semiconductor Corporation
FDMA1430JP Rev.C1
8
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