FDN359BN [FAIRCHILD]
N-Channel Logic Level PowerTrench TM MOSFET; N沟道逻辑电平的PowerTrench MOSFET TM
| 型号： | FDN359BN |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Logic Level PowerTrench TM MOSFET |
| 文件： | 总6页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2006
FDN359BN
N-Channel Logic Level PowerTrenchTM MOSFET
Features
• 2.7 A, 30 V.
General Description
RDS(ON)= 0.046 Ω @ VGS = 10 V
DS(ON)= 0.060 Ω @ VGS = 4.5 V
This N-Channel Logic Level MOSFET is produced
R
using
Fairchild’s
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
• Very fast switching speed.
• Low gate charge (5nC typical)
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance version of industry standard
SOT-23 package. Identical pin out to SOT-23 with 30%
higher power handling capability.
D
D
S
S
G
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
ID
Gate-Source Voltage
V
A
±20
2.7
Maximum Drain Current – Continuous
– Pulsed
(Note 1a)
15
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.5
PD
W
0.46
TJ, TSTG
Operating and Storage Temperature Range
−55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
359B
FDN359BN
7’’
8mm
3000 units
FDN359BN Rev A(W)
©2006 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
TJ = -55OC
VGS = ±20 V, VDS = 0 V
ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
21
mV/°C
1
µA
µA
nA
10
IGSS
Gate–Body Leakage
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.8
–4
3
V
mV/°C
Ω
V
DS = VGS
,
ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA,Referenced to 25°C
Static Drain–Source
On–Resistance
0.026 0.046
0.032 0.060
0.033 0.075
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V, ID = 2.7 A, TJ = 125°C
ID = 2.7 A
ID = 2.4 A
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 5 V
15
A
S
Forward Transconductance
VDS = 5V,
ID = 2.7 A
11
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
485
105
65
650
140
100
pF
pF
pF
Ω
V
DS = 15 V,
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
f = 1.0 MHz
1.8
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
7
5
14
10
35
4
ns
ns
VDD = 15V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
20
2
ns
ns
Qg
Qgs
Qgd
5
7
nC
nC
nC
VDS = 15 V,
VGS = 5 V
ID = 2.7 A,
1.3
1.8
FDN359BN Rev A(W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
0.42
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 0.42 A (Note 2)
0.7
IF = 2.7A, diF/dt = 100 A/µs
trr
12
3
20
5
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Qrr
nC
otes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
a) 250°C/W when mounted on a
2
0.02 in pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN359BN Rev A(W)
Typical Characteristics
2.6
2.2
1.8
1.4
1
15
3.5V
VGS = 10V
4.5V
VGS = 3.0V
12
9
4.0V
3.0V
3.5V
6
4.0V
4.5V
5.0V
6.0
10.0V
3
2.5V
0.6
0
0
3
6
9
12
15
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
0.06
0.04
0.02
1.2
1.1
1
ID = 2.7A
GS = 10V
ID = 1.35A
V
TA = 125oC
0.9
0.8
TA = 25oC
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
15
12
9
VGS = 0V
VDS = 5V
10
1
0.1
0.01
TA = 125oC
6
TA = 125oC
-55oC
25oC
3
-55oC
0.8
0.001
0.0001
25oC
0
0
0.2
0.4
0.6
1
1.2
1.4
1
1.5
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN359BN Rev A(W)
Typical Characteristics
10
800
600
400
200
0
f = 1MHz
VGS = 0 V
ID = 2.7A
8
VDS = 10V
Ciss
20V
6
15V
4
2
0
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
100
10
SINGLE PULSE
RθJA = 270°C/W
100µs
T
A = 25°C
RDS(ON) LIMIT
1ms
10ms
100ms
1
1s
DC
VGS = 10V
0.1
0.01
SINGLE PULSE
RθJA = 270oC/W
T
A = 25oC
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 270 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
SINGLE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN359BN Rev A(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
PowerTrench
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
QFET
QS™
®
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I2C™
MSXPro™
OCX™
®
UltraFET
i-Lo™
ImpliedDisconnect™
IntelliMAX™
UniFET™
VCX™
Wire™
OCXPro™
OPTOLOGIC
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OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Across the board. Around the world.™
®
The Power Franchise
SuperFET™
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Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
相关型号：
FDN360P_NL
Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
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