FDN360P [TYSEMI]
SuperSOT-3;
| 型号： | FDN360P |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | SuperSOT-3 晶体 晶体管 开关 光电二极管 PC |
| 文件： | 总2页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
FDN360P
Single P-Channel PowerTrenchTM MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
• -2 A, -30 V. RDS(on) = 0.080 Ω @ VGS = -10 V
RDS(on) = 0.125 Ω @ VGS = -4.5 V.
• Low gate charge (5nC typical).
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON)
.
Applications
• High power and current handling capability.
• DC/DC converter
• Load switch
• Motor drives
D
D
S
S
G
SuperSOTTM-3
G
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
-30
V
V
A
20
±
(Note 1a)
(Note 1a)
-2
-20
PD
Power Dissipation for Single Operation
0.5
W
(Note 1b)
0.46
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
θ
(Note 1a)
(Note 1)
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
250
75
C/W
C/W
JA
°
°
JC
θ
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
360
FDN360P
7’’
8mm
3000 units
http://www.twtysemi.com
1 of 2
4008-318-123
Product specification
FDN360P
TA = 25°C unless otherwise noted
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
A
-30
V
µ
DSS
Breakdown Voltage Temperature
Coefficient
ID = -250 A, Referenced to
25 C
°
20
mV/ C
BV
∆
µ
°
∆
TJ
IDSS
Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
-1
A
µ
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
-3
nA
(Note 2)
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
A
-1
-1.8
-4
V
µ
GS(th)
Gate Threshold Voltage
Temperature Coefficient
ID = -250 A, Referenced to
mV/ C
V
µ
°
∆
25 C
°
TJ
∆
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -2 A
0.060 0.080
0.080 0.136
0.095 0.125
Ω
V
GS = -10 V, ID = -2 A, TJ=125 C
°
VGS = -4.5 V, ID = -1.5 A
VGS = -10 V, VDS = -5 V
ID(on)
gFS
On-State Drain Current
-20
A
S
Forward Transconductance
VDS = -5 V, ID = -2 A
5.5
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
420
140
60
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -15 V, ID = -1 A,
9
8
18
16
29
12
7
ns
ns
V
GS = -10 V, RGEN = 6
Ω
18
6
ns
ns
Qg
Qgs
Qgd
VDS = -15 V, ID = -2 A,
VGS = -10 V,
5
nC
nC
nC
1.7
1.8
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.42
-1.2
A
V
(Note 2)
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A
-0.75
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
b) 270°C/W when
mounted on a 0.001 in2
pad of 2 oz. Cu.
a) 250°C/W when
mounted on a 0.02 in2
Pad of 2 oz. Cu.
Scale
1
:
1
on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
http://www.twtysemi.com
2 of 2
4008-318-123
相关型号：
FDN360P_NL
Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN363N
Power Field-Effect Transistor, 1A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明