FDN360P [ONSEMI]
PowerTrench MOSFET，单 P 沟道;
| 型号： | FDN360P |
| 厂家： | 
ONSEMI |
| 描述： | PowerTrench MOSFET，单 P 沟道 PC 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Single, P-Channel,
POWERTRENCH)
SOT−23
CASE 527AG
FDN360P
General Description
D
This P−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored
to minimize the on−state resistance and yet maintain low gate charge
for superior switching performance.
These devices are well suited for low voltage and battery powered
applications where low in−line power loss and fast switching are
required.
G
S
Features
MARKING DIAGRAM
• −2 A, −30 V
♦ R
♦ R
= 80 mW @ V = −10 V
GS
DS(ON)
360MG
= 125 mW @ V = −4.5 V
DS(ON)
GS
G
• Low Gate Charge (6.2 nC Typical)
• High Performance Trench Technology for Extremely Low R
• High Power Version of Industry Standard SOT−23 Package. Identical
Pin−Out to SOT−23 with 30% Higher Power Handling Capability
• These Devices are Pb−Free and are RoHS Compliant
DS(ON)
360
= Specific Device Code
= Date Code
M
G
= Pb−Free Package
(Note: Microdot may be in either location)
ABSOLUTE MAXIMUM RATINGS
A
ORDERING INFORMATION
(T = 25°C unless otherwise noted)
Symbol
Parameter
Drain−Source Voltage
Ratings
−30
Unit
V
†
Device
Package
Shipping
V
DSS
GSS
FDN360P
SOT−23
(Pb-Free,
Halide Free)
3000 /
Tape & Reel
Gate−Source Voltage
20
V
V
Drain Current
Continuous (Note 1a)
Pulsed
A
I
D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
−2
−10
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
W
P
D
0.5
0.46
Operating and Storage Junction
Temperature Range
_C
−55 to +150
T , T
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
Thermal Resistance,
Junction−to−Ambient (Note 1a)
°C/W
250
R
θ
JA
Thermal Resistance, Junction−to−Case
(Note 1)
°C/W
75
R
θ
JC
© Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
January, 2023 − Rev. 8
FDN360P/D
FDN360P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
= 0 V, I = −250 mA
−30
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature Coefficient
I = −250 mA, Referenced to 25_C
D
−
−22
mV/_C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= −24 V, V = 0 V
−
−
−
−
−
−
−
−
−1
−10
100
−100
mA
DSS
GS
= −24 V, V = 0 V, T = 55_C
GS
J
I
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
= 20 V, V = 0 V
nA
nA
GSSF
DS
I
= −20 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
DS
= V I = −250 mA
GS, D
−1
−1.9
−3
V
GS(th)
Gate Threshold Voltage Temperature Coefficient I = −250 mA, Referenced to 25_C
−
4
−
mV/_C
DVGS(th)
DTJ
D
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −2 A
−
−
63
90
100
−
80
136
125
−
mW
DS(on)
D
= −10 V, I = −2 A, T = 125_C
D
J
= −4.5 V, I = −1.5 A
−
D
I
On−State Drain Current
= −10 V, V = −5 V
−10
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= −5 V, I = −2 A
5
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −15 V, V = 0 V, f = 1.0 MHz
−
−
−
298
83
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
39
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= −15 V, I = −1 A,
−
−
−
−
−
−
−
6
13
11
6
12
23
20
12
9
ns
ns
d(on)
DD
GS
D
= −10 V, R
= 6 W
GEN
t
r
t
ns
d(off)
t
f
ns
Q
V
DS
V
GS
= −15 V, I = −3.6 A,
6.2
1
nC
nC
nC
g
D
= −10 V
Q
−
gs
gd
Q
1.2
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = −0.42 A (Note 2)
I
−
−
−
−0.42
−1.2
A
V
S
V
SD
V
GS
−0.8
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
CA
JC
a) 250°C/W when mounted on
b) 270°C/W when mounted on
a minimum pad
2
a 0.02 in pad of 2 oz copper
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
FDN360P
TYPICAL CHARACTERISTICS
2
15
V
GS
= −10 V
V
GS
= −3.5 V
−4.0 V
−5.0 V
1.8
12 −6.0 V
−4.5 V
−4.0 V
1.6
1.4
9
6
1.2
1
−4.5 V
−5.0 V
−3.5 V
−6.0 V
0.8
0.6
−7.0 V
−10 V
3
−3.0 V
0.4
0
0
0
3
6
9
12
15
1
2
3
4
5
−I Drain Current (A)
D,
−V , Drain Source Voltage (V)
DS
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.6
0.3
ID = −1 A
I
D
= −2 A
1.4
1.2
1
V
= −10 V
0.25
0.2
GS
T = 125°C
A
0.15
0.1
0.8
0.6
T
A
= 25°C
0.05
−50
−25
0
25
50
75
100 125
150
2
4
6
8
10
T , Junction Temperature (5C)
J
−V , Gate to Source Voltage (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
10
1
10
V
= 0 V
GS
T
A
= −55°C
25°C
125°C
V
DS
= −5 V
8
A
T
= 125°C
0.1
6
4
25°C
0.01
−55°C
2
0
0.001
0.0001
0.4
1
2
3
4
5
0
0.2
0.6
0.8
1
1.2
−V , Body Diode Forward Voltage (V)
SD
−V , Gate to Source Voltage (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature
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3
FDN360P
TYPICAL CHARACTERISTICS (continued)
400
10
8
f = 1 MHz
I
D
= −3.6 A
V
DS
= −5 V
V
GS
= 0 V
−10 V
C
iss
300
200
−15 V
6
4
2
0
C
oss
100
0
C
rss
0
6
12
18
24
30
0
1
2
3
4
5
6
7
−V , Drain to Source Voltage (V)
DS
Q ,Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
20
15
Single Pulse
R
θ
JA
= 270°C/W
R
Limit
DS(ON)
10 ms
T = 25°C
A
100 ms
1ms
10 ms
100 ms
1
10
5
1 s
DC
V
= −10 V
GS
Single Pulse
= 270°C/W
0.1
0.01
R
θ
JA
T = 25°C
A
0
0.01
0.1
1
10
100
1000
0.001
0.1
1
10
100
t Time (s)
1
−V , Drain−Source Voltage (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
1
D = 0.5
0.2
0.1
R
(t) = r(t) + R
q
JA
q
JA
0.1
R
= 270°C/W
q
JA
0.05
P
(pk)
t
1
0.02
0.01
0.01
t
2
T − T = P * R (t)
q
JA
J
A
Single Pulse
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
100
1000
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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