FDP79N15_07 [FAIRCHILD]
150V N-Channel MOSFET; 150V N沟道MOSFET型号: | FDP79N15_07 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 150V N-Channel MOSFET |
文件: | 总10页 (文件大小:392K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
April 2007
TM
UniFET
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
Description
•
•
•
•
•
79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V
Low gate charge ( typical 56 nC)
Low Crss ( typical 96pF)
Fast switching
Improved dv/dt capability
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D
S
G
D S
S
Absolute Maximum Ratings
Symbol
Parameter
FDP79N15 FDPF79N15
Unit
VDSS
Drain-Source Voltage
Drain Current
150
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
79
50
79*
50*
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
316
316*
VGSS
EAS
IAR
Gate-Source voltage
± 30
1669
79
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
46.3
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate above 25°C
463
3.7
38
0.3
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP79N15 FDPF79N15
Unit
°C/W
°C/W
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.27
0.5
3.3
--
RθCS
RθJA
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP79N15 / FDPF79N15 Rev. B
1
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Package Marking and Ordering Information
Device Marking
FDP79N15
Device
FDP79N15
FDPF79N15
Package
TO-220
Reel Size
Tape Width
Quantity
-
-
-
-
50
50
FDPF79N15
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
ID = 250μA, Referenced to 25°C
150
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
0.15
V/°C
/
ΔTJ
IDSS
Zero Gate Voltage Drain Current
VDS = 150V, VGS = 0V
VDS = 120V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 39.5A
VDS = 40V, ID = 39.5A
3.0
--
--
0.025
46
5.0
0.03
--
V
Ω
S
Static Drain-Source
On-Resistance
(Note 4)
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
2620
730
96
3410
950
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
140
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 75V, ID = 79A
RG = 25Ω
--
--
--
--
--
--
--
50
200
55
112
410
120
85
73
--
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
38
ns
Qg
VDS = 120V, ID = 79A
VGS = 10V
56
nC
nC
nC
Qgs
Qgd
18
21
--
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
79
316
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 79A
--
V
VGS = 0V, IS = 79A
136
2.1
ns
μC
dIF/dt =100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.357mH, I = 79A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 79A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FDP79N15 / FDPF79N15 Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
102
101
100
Bottom : 5.5 V
150oC
25oC
101
-55oC
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
* Notes :
1. VDS = 40V
2. 250μs Pulse Test
100
10-1
100
101
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.07
0.06
102
0.05
VGS = 10V
150oC
101
0.04
25oC
VGS = 20V
0.03
0.02
* Notes :
1. VGS = 0V
* Note : TJ = 25oC
175
2. 250μs Pulse Test
100
0.2
0
25
50
75
100
125
150
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 30V
Coss
10
Crss = Cgd
5000
4000
3000
2000
1000
0
VDS = 75V
VDS = 120V
8
Ciss
6
4
2
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
* Note : ID = 79A
50
0
0
10
20
30
40
60
10-1
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDP79N15 / FDPF79N15 Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
0.8
* Notes :
1. VGS = 10 V
2. ID = 250 μA
2. ID = 34.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
for FDP79N15
Figure 9-2. Maximum Safe Operating Area
for FDPF79N15
10 μs
100 μs
1 ms
10 μs
102
101
100
10-1
10-2
102
100 μs
10 ms
100 ms
1 ms
10 ms
101
DC
Operation in This Area
is Limited by R DS(on)
100 ms
Operation in This Area
is Limited by R DS(on)
DC
100
* Notes :
1. TC = 25 o
2. TJ = 150 o
* Notes :
C
10-1
10-2
1. TC = 25 o
2. TJ = 150 o
C
C
C
3. Single Pulse
3. Single Pulse
100
101
102
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [oC]
4
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FDP79N15 / FDPF79N15 Rev. B
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP79N15
D=0.5
0.2
10-1
0.1
PDM
t1
0.05
t2
10-2
* Notes :
0.02
0.01
1. ZθJC(t) = 0.27 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF79N15
D=0.5
100
0.2
0.1
PDM
0.05
t1
10-1
t2
0.02
* Notes :
1. ZθJC(t) = 3.3 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
single pulse
10-3
10-2
10-5
10-4
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
5
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FDP79N15 / FDPF79N15 Rev. B
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FDP79N15 / FDPF79N15 Rev. B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
www.fairchildsemi.com
FDP79N15 / FDPF79N15 Rev. B
Mechanical Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
–0.05
1.30
ø3.60 ±0.10
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
8
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FDP79N15 / FDPF79N15 Rev. B
Mechanical Dimensions (Continued)
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
9
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FDP79N15 / FDPF79N15 Rev. B
tm
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As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b) support
or sustain life, and (c) whose failure to perform when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
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or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been dis-
continued by Fairchild Semiconductor.The datasheet is printed for refer-
ence information only.
Rev. I25
10
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FDP79N15 / FDPF79N15 Rev. B
相关型号:
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