FDP7N50U [FAIRCHILD]
500V N-Channel MOSFET; 500V N沟道MOSFET
| 型号： | FDP7N50U |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 500V N-Channel MOSFET |
| 文件： | 总10页 (文件大小：959K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2007
TM
UniFET
FDP7N50U/FDPF7N50U
500V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
Low gate charge ( typical 12.8 nC)
Low Crss ( typical 9 pF)
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
TO-220F
TO-220
FDP Series
G D
S
G
D S
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FDP7N50U FDPF7N50U
Unit
VDSS
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
5
3.0
5 *
3.0 *
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
20
20 *
A
V
VGSS
EAS
IAR
Gate-Source voltage
±30
270
5
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.9
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
89
39
W
- Derate above 25°C
0.71
0.31
W/°C
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
300
°C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FDP7N50U FDPF7N50U
Unit
°C/W
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
1.4
0.5
3.2
--
RθCS
RθJA
62.5
62.5
°C/W
©2007 Fairchild Semiconductor Corporation
FDP7N50U/FDPF7N50U REV. B
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FDP7N50U
Device
FDP7N50U
FDPF7N50U
Package
TO-220
Reel Size
Tape Width
Quantity
--
--
--
--
50
50
FDPF7N50U
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
D = 250µA, Referenced to 25°C
500
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
Coefficient
I
0.5
V/°C
/
∆TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
DS = 400V, TC = 125°C
--
--
--
--
25
250
µA
µA
V
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250µA
3.0
--
--
5.0
1.5
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 2.5A
1.2
2.5
(Note 4)
gFS
Forward Transconductance
VDS = 40V, ID = 2.5A
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
720
95
9
940
190
13.5
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250V, ID = 7A
--
--
--
--
--
--
--
6
55
20
120
60
ns
ns
RG = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
25
ns
(Note 4, 5)
(Note 4, 5)
35
80
ns
Qg
VDS = 400V, ID = 7A
GS = 10V
12.8
3.7
5.8
16.6
--
nC
nC
nC
V
Qgs
Qgd
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
5
20
1.6
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 7A
--
V
VGS = 0V, IS = 7A
40
0.04
ns
µC
dIF/dt =100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 7A, V = 50V, L=10mH, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 7A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
www.fairchildsemi.com
FDP7N50U/FDPF7N50U REV. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
VGS
Top :
10.0 V
8.0V
101
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
15
10
5
150℃
Bottom : 5.0 V
100
10-1
10-2
25℃
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Note
1. VDS = 40V
2. 250µ s Pulse Test
0
0
10
20
30
40
50
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.5
101
100
10-1
2.0
1.5
1.0
0.5
0.0
VGS = 10V
VGS = 20V
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : T = 25℃
J
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
VDS = 250V
Coss = Cds + Cgd
Crss = Cgd
1000
100
10
VDS = 400V
C
iss
Coss
6
Crss
4
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
2
※ Note : ID = 7 A
0
100
101
0
5
10
15
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDP7N50U/FDPF7N50U REV. B
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Drain Current
Vs. Case Temperature
6
1.2
1.1
4
1.0
2
♦ Notes :
0.9
0.8
1. VGS = 0 V
2. ID = 250 µA
0
-100
-50
0
50
100
150
200
25
50
75
100
125
150
TJ, Junction Temperature [oC]
TC, Case Temperature [℃]
Figure 9-1. Maximum Safe Operating Area
- FDP7N50U
Figure 9-2. Maximum Safe Operating Area
- FDPF7N50U
10 us
10 us
101
101
100 us
1 ms
100 us
1 ms
10 ms
10 ms
100
100
DC
Operation in This Area
is Limited by R DS(on)
Operation in This Area
DC
is Limited by R DS(on)
10-1
10-1
※ Notes :
※ Notes :
1. TC = 25 o
2. TJ = 150 o
C
1. TC = 25 o
2. TJ = 150 o
C
C
C
3. Single Pulse
3. Single Pulse
10-2
100
10-2
100
101
102
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
4
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FDP7N50U/FDPF7N50U REV. B
Figure 10-1. Transient Thermal Response Curve - FDP7N50U
100
D=0.5
0.2
0.1
PDM
10-1
0.05
t1
t2
0.02
0.01
※
Notes :
1. Zθ (t) = 1.4 ℃ /W M ax.
JC
2. Duty Factor, D=t1/t2
3. TJM - TC
=
PDM * Zθ (t)
JC
single pulse
10-4
10-2
10-5
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
Figure 10-2. Transient Thermal Response Curve - FDPF7N50U
D=0.5
100
0.2
0.1
PDM
0.05
t1
10-1
0.02
0.01
t2
※
Notes :
1. Zθ (t) = 3.2 ℃ /W M ax.
JC
2. Duty Factor, D=t1/t2
3. TJM - TC
=
PDM * Zθ (t)
JC
single pulse
10-4
10-2
10-5
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
5
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FDP7N50U/FDPF7N50U REV. B
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FDP7N50U/FDPF7N50U REV. B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
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FDP7N50U/FDPF7N50U REV. B
Mechanical Dimensions
TO-220
Dimensions in Millimeters
8
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FDP7N50U/FDPF7N50U REV. B
Mechanical Dimensions (Continued)
TO-220F
2.54 0.20
(0.70)
10.16 0.20
(7.00)
ø3.18 0.10
(1.00x45°)
MAX1.47
0.80 0.10
#1
0.35 0.10
+0.10
–0.05
0.50
2.76 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
9.40 0.20
Dimensions in Millimeters
9
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FDP7N50U/FDPF7N50U REV. B
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
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which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I24
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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