FDPF19N40 [FAIRCHILD]
N-Channel MOSFET 400V, 19A, 0.24Ω; N沟道MOSFET 400V ， 19A ， 0.24Ω
| 型号： | FDPF19N40 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel MOSFET 400V, 19A, 0.24Ω |
| 文件： | 总9页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October
UniFETTM
FDP19N40 / FDPF19N40
tm
N-Channel MOSFET
400V, 19A, 0.24Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A
Low Gate Charge ( Typ. 32nC)
Low Crss ( Typ. 20pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant
D
G
TO-220
FDP Series
TO-220F
FDPF Series
G
D S
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDP19N40
FDPF19N40
400
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±30
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
19
11.4
76
19*
11.4*
76*
ID
Drain Current
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
542
19
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
21.5
15
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
215
40
PD
Power Dissipation
1.65
0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
FDP19N40
FDPF19N40
Units
RθJC
RθCS
RθJA
0.6
0.5
3.0
-
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
oC/W
62.5
62.5
©2008 Fairchild Semiconductor Corporation
FDP19N40 / FDPF19N40 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP19N40
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FDP19N40
FDPF19N40
-
-
-
-
50
50
FDPF19N40
TO-220F
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TJ = 25oC
400
-
-
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250μA, Referenced to 25oC
0.5
V/oC
V
DS = 400V, VGS = 0V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 320V, TC = 125oC
10
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250μA
VGS = 10V, ID = 9.5A
VDS = 20V, ID = 9.5A
3.0
-
-
5.0
0.24
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
0.2
18.3
(Note 4)
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
1590
255
20
2115
340
29
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
32
40
V
V
DS = 320V, ID = 19A
GS = 10V
10
-
Qgd
Gate to Drain “Miller” Charge
-
13
-
nC
(Note 4, 5)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
31
70
82
49
72
ns
ns
ns
ns
VDD = 200V, ID = 19A
G = 25Ω
150
174
108
R
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
19
76
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 19A
-
V
349
3.56
ns
μC
VGS = 0V, ISD = 19A
dIF/dt = 100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 3mH, I = 19A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3:
I
≤ 19A, di/dt ≤ 200A/μs, V ≤ BV , Starting T = 25°C
SD
DD
DSS J
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDP19N40 / FDPF19N40 Rev. A
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
50
40
VGS = 15.0V
10.0V
8.0 V
7.0 V
10
6.5 V
6.0 V
5.5 V
150oC
10
-55oC
1
25oC
*Notes:
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1. VDS = 20V
2. 250μs Pulse Test
1
0.1
0.03
4
5
6
7
8
0.1
1
10
VGS,Gate-Source Voltage[V]
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.40
0.35
80
150oC
0.30
25oC
10
VGS = 10V
0.25
VGS = 20V
0.20
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
30 40
ID, Drain Current [A]
2. 250μs Pulse Test
1
0.2
0.15
0.6
1.0
1.2
0
10
20
50
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
3500
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 100V
VDS = 200V
VDS = 320V
= C + C
ds
= C
gd
oss
rss
gd
3000
2500
2000
1500
1000
500
8
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Coss
Crss
*Note: ID = 19A
25 30
0
0.1
0
5
10
15
20
35
1
10
30
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FDP19N40 / FDPF19N40 Rev. A
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250μA
2. ID = 9.5A
0.8
-75
-75
-25
25
75
125
175
-25
25
75
125
175
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Safe Operating Area
- FDP19N40
200
20
10μs
100
100μs
1ms
10ms
16
12
8
10
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.1
0.01
4
3. Single Pulse
0
25
1
10
100
800
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve - FDP19N40
1
0.5
0.2
0.1
PDM
0.1
t1
0.05
t2
0.02
0.01
*Notes:
1. ZθJC(t) = 0.6oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
Single pulse
0.003
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
FDP19N40 / FDPF19N40 Rev. A
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FDP19N40 / FDPF19N40 Rev. A
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D
U
T
V
D
S
_
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S
D
L
D
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R
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D
V
G
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v
/ d
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t r o l l e
d
b
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R
G
•
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t r o l l e
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p
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r i o
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D
G
a
t e
P
u
l s
e
W
i d t h
V
- - - - - - - - - - - - - - - - - - - - - - - - - -
D
=
G
S
G
a
t e
P
u
l s
e
P
e
r i o
d
1
0
V
(
D
r i v
e
r
)
I F
,
B
o
d
y
D
i o
d
e
F
o
r w
a
r d
C
u
r r e
n
t
M
I
S
D
d
i / d
t
(
D
U
T
)
I R
d
M
B
o
d
y
D
e
i o
R
e
R
e
v
e
r s
d
e
C
u
r r e
n
t
V
D
S
(
D
U
T
)
B
o
d
y
S
D
i o
d
e
c
o
v
e
r y
v
/ d
t
V
V
D
D
D
B
o
d
y
D
i o
d
e
www.fairchildsemi.com
FDP19N40 / FDPF19N40 Rev. A
6
Mechanical Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
–0.05
1.30
ø3.60 ±0.10
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
10.00 ±0.20
www.fairchildsemi.com
FDP19N40 / FDPF19N40 Rev. A
7
Mechanical Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
(30
°
)
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
www.fairchildsemi.com
FDP19N40 / FDPF19N40 Rev. A
8
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Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I37
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FDP19N40 / FDPF19N40 Rev. A
9
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