FDS2570L86Z [FAIRCHILD]
Power Field-Effect Transistor, 4A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8;
| 型号： | FDS2570L86Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 4A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2001
FDS2570
150V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 4A, 150 V.
RDS(ON) = 80 mΩ @ VGS = 10 V
RDS(ON) = 90 mΩ @ VGS = 6 V
• Low gate charge
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• Fast switching speed
• High performance trench technology for extremely
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
low RDS(ON)
• High power and current handling capability
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
150
V
V
A
VGSS
Gate-Source Voltage
±20
4
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
30
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
1.2
PD
W
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
RθJA
RθJA
RθJC
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS2570
FDS2570
13’’
12mm
2500 units
FDS2570 Rev C(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 75 V,
ID = 4.4 A
375
4.4
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
150
V
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
150
ID = 250 µA, Referenced to 25°C
VDS = 120 V, VGS = 0 V
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
1
µA
NA
NA
IGSSF
IGSSR
VGS = 20 V,
VGS = –20 V
VDS = 0 V
VDS = 0 V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
2
2.6
-7
4
V
V
DS = VGS, ID = 250 µA
∆VGS(th)
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
∆TJ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 6 V,
ID = 4 A
ID = 3.8 A
60
63
80
90
mΩ
120
158
VGS = 10 V, ID = 4 A, TJ = 125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 10 V,
VDS = 10 V
ID = 4 A
30
A
S
Forward Transconductance
20
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1907
117
33
PF
PF
PF
VDS = 75 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
12
7
19
14
65
34
62
Ns
Ns
Ns
Ns
NC
NC
NC
V
DD = 75 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 10 V,
41
21
39
7
Qg
Qgs
Qgd
V
DS = 75 V,
ID = 4 A,
VGS = 10 V
9
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
Voltage
VSD
(Note 2)
0.7
FDS2570 Rev C(W)
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
b) 105°/W when
c) 125°/W when mounted on a
minimum pad.
mounted on a 1in2
pad of 2 oz copper
mounted on a .04 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS2570 Rev C(W)
Typical Characteristics
1.6
1.4
1.2
1
30
VGS = 10V
VGS = 4.0V
25
20
15
10
5
5.0V
4.5V
4.5V
5.0V
10V
4.0V
3.5V
0.8
0
0
5
10
15
20
25
30
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.6
2.2
1.8
1.4
1
0.2
0.16
0.12
0.08
0.04
ID = 2.2 A
ID = 4.3 A
VGS = 10 V
TA = 125oC
TA = 25oC
0.6
0.2
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
15
10
5
VGS = 0V
VDS = 10 V
1
TA = 125oC
0.1
TA = 125oC
25oC
25oC
0.01
0.001
-55oC
-55oC
0.0001
0
0
0.2
0.4
0.6
0.8
1
2
2.5
3
3.5
4
4.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS2570 Rev C(W)
Typical Characteristics
3000
2500
2000
1500
1000
500
10
f = 1MHz
GS = 0 V
ID = 4.3 A
VDS = 25 V
50 V
V
8
6
4
2
0
CISS
75
CRSS
COSS
0
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
80
60
40
20
0
RDS(ON) LIMIT
SINGLE PULSE
RθJA = 125 °C/W
100us
10
1
TA = 25°C
1ms
10ms
100ms
1s
10s
DC
0.1
VGS = 10V
SINGLE PULSE
0.01
RθJA = 125oC/W
TA = 25oC
0.001
0.1
1
10
100
1000
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
0.2
RθJA = 125 °C/W
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS2570 Rev C(W)
SOIC-8 Tape and Reel Data
SOIC(8lds) Packaging
Configuration: Figure 1.0
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
made from
a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
Antistatic Cover Tape
These full reels are individually barcode labeled and
placed inside
a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside
comes in different sizes depending on the number of parts
shipped.
a barcode labeled shipping box which
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
F
NDS
9959
852
Customized
Label
F
F
F
F
Pin 1
SOIC (8lds) Packaging Information
Standard
L86Z
F011
D84Z
Packaging Option
(no flow code)
SOIC-8 Unit Orientation
Packaging type
TNR
2,500
Rail/Tube
TNR
4,000
TNR
500
Qty per Reel/Tube/Bag
Reel Size
95
-
13" Dia
13" Dia
7" Dia
Box Dimension (mm)
Max qty per Box
355x333x40 530x130x83 355x333x40 193x183x80
5,000
0.0774
0.6060
30,000
0.0774
-
8,000
0.0774
0.9696
2,000
0.0774
0.1182
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
F63TNR Label sample
LOT: CBVK741B019
QTY: 2500
SPEC:
FSID: FDS9953A
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
D/C1: Z9842AB QTY1:
SPEC REV:
CPN:
D/C2:
QTY2:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
640mm minimum or
80 empty pockets
1680mm minimum or
210 empty pockets
January 2001, Rev. C
©2001 Fairchild Semiconductor Corporation
SOIC-8 Tape and Reel Data, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
0.450
+/-
0.150
(8lds)
SOIC
(12mm)
5.30
+/-0.10
6.50
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
2.1
+/-0.10
9.2
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
12mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
January 2001, Rev. C
SOIC-8 Package Dimensions
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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