FDW2601NZ [FAIRCHILD]
Dual N-Channel 2.5V Specified PowerTrench MOSFET; 双N沟道2.5V指定的PowerTrench MOSFET
| 型号： | FDW2601NZ |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 文件： | 总11页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2004
FDW2601NZ
®
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
Features
General Description
! 8.2A, 30V
r
= 0.015Ω, V = 4.5V
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
DS(ON)
GS
r
= 0.020Ω, V = 2.5V
GS
DS(ON)
! Extended V range (±12 V) for battery applications
GS
! HBM ESD Protection Level of 3.5kV Typical (note 3)
! High performance trench technology for extremely low
r
DS(ON)
! Low profile TSSOP-8 package
Applications
! Load switch
! Battery charge
! Battery disconnect circuits
D1
D2
G2
S2
S2
D2
G1
S1
S1
D1
G1
G2
S1
S2
Pin 1
TSSOP-8
©2004 Fairchild Semiconductor Corporation
FDW2601NZ Rev. A
www.fairchildsemi.com
1
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Symbol
Parameter
Ratings
30
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
V
V
DSS
GS
±12
Drain Current
Continuous (T = 25 C, V = 4.5V, R
o
o
= 77 C/W)
8.2
4.5
A
A
C
GS
θJA
I
o
o
D
Continuous (T = 100 C, V = 2.5V, R
= 77 C/W)
C
GS
θJA
Pulsed
Figure 4
1.6
A
Power dissipation
W
P
D
o
Derate above 25°C
13
mW/ C
o
T , T
Operating and Storage Temperature
-55 to 150
C
J
STG
Thermal Characteristics
o
R
R
Thermal Resistance Junction to Ambient (Note 1)
Thermal Resistance Junction to Ambient (Note 2)
77
C/W
C/W
θJA
θJA
o
114
Package Marking and Ordering Information
Device Marking
2601NZ
Device
Package
TSSOP-8
TSSOP-8
Reel Size
13”
Tape Width
Quantity
2500 units
2500 units
FDW2601NZ
12 mm
12 mm
2601NZ
FDW2601NZ_NL (Note 4)
13”
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
Drain to Source Breakdown Voltage
I
= 250µA, V = 0V
30
-
-
-
-
-
-
1
V
VDSS
D
GS
V
V
V
V
= 24V
= 0V
DS
GS
GS
GS
I
I
DSS
Zero Gate Voltage Drain Current
µA
o
T =100 C
-
5
A
= ±12V
= ±4.5V
-
±10
±250
µA
Gate to Source Leakage Current
GSS
nA
On Characteristics
V
Gate to Source Threshold Voltage
V
= V , I = 250µA
0.6
0.8
1.5
V
GS(TH)
GS
DS
D
I
I
I
I
= 8.2A, V = 4.5V
-
-
-
-
0.011
0.011
0.012
0.012
0.015
0.016
0.019
0.020
Ω
D
D
D
D
GS
= 7.9A, V = 4.0V
GS
r
DS(ON)
Drain to Source On Resistance
= 7.3A, V = 3.1V
GS
= 7.1A, V = 2.5V
GS
Dynamic Characteristics
C
C
C
R
Input Capacitance
-
-
-
-
-
-
-
-
1840
250
160
2.6
20
-
-
pF
pF
pF
Ω
ISS
OSS
RSS
G
V
= 15V, V = 0V,
GS
DS
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
V
= 0.5V, f = 1MHz
= 0V to 4.5V
-
GS
Q
Q
Q
Q
Total Gate Charge at 4.5V
Total Gate Charge at 2.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
V
30
18
-
nC
nC
nC
nC
g(TOT)
g(2.5)
gs
GS
GS
V
I
= 15V
= 8.2A
DD
= 0V to 2.5V
12
D
2.7
5.1
I = 1.0mA
g
-
gd
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2
FDW2601NZ Rev. A
Switching Characteristics (V = 4.5V)
GS
t
t
t
t
t
t
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
113
ns
ns
ns
ns
ns
ns
ON
18
57
69
71
-
-
d(ON)
-
V
V
= 15V, I = 8.2A
r
DD
GS
D
= 4.5V, R = 6.8Ω
Turn-Off Delay Time
Fall Time
-
-
GS
d(OFF)
f
Turn-Off Time
210
OFF
Drain-Source Diode Characteristics
V
Source to Drain Diode Voltage
Reverse Recovery Time
I
I
I
= 1.3A
-
-
-
0.7
1.2
28
17
V
SD
SD
SD
SD
t
= 8.2A, dI /dt = 100A/µs
-
-
ns
nC
rr
SD
Q
Reverse Recovered Charge
= 8.2A, dI /dt = 100A/µs
SD
RR
Notes:
o
2
1. R
is 77 C/W (steady state) when mounted on a 1 inch copper pad on FR-4.
θJA
θJA
o
2. R
is 114 C/W (steady state) when mounted on a mininum copper pad on FR-4.
3. The diode connected to the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. FDW2601NZ_NL is lead free product. FDW2601NZ_NZ marking will appear on the reel label.
www.fairchildsemi.com
3
FDW2601NZ Rev. A
Typical Characteristic T = 25°C unless otherwise noted
A
1.2
1.0
0.8
0.6
0.4
0.2
0
10
8
V
= 4.5V
GS
6
4
V
= 2.5V
GS
2
0
0
25
50
75
100
125
150
25
50
75
100
125
150
o
o
T , AMBIENT TEMPERATURE ( C)
T , AMBIENT TEMPERATURE ( C)
A
A
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
0.01
-4
-3
-2
-1
0
1
2
3
-5
10
10
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
500
o
T
= 25 C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
A
FOR TEMPERATURES
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
o
100
150 - T
A
I = I
25
125
V
= 2.5V
GS
10
5
-5
-4
-3
-2
-1
0
1
2
3
10
10
10
10
10
t, PULSE WIDTH (s)
10
10
10
10
Figure 4. Peak Current Capability
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4
FDW2601NZ Rev. A
Typical Characteristic (Continued) T = 25°C unless otherwise noted
A
300
100
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V
DD
100µs
40
1ms
10
o
T
= 150 C
J
OPERATION IN THIS
10ms
AREA MAY BE
20
0
LIMITED BY r
o
DS(ON)
T
= 25 C
J
o
T
= -55 C
SINGLE PULSE
J
T
= MAX RATED
J
1
o
T
= 25 C
A
0.5
0.1
1
10
40
1.0
1.5
2.0
2.5
V
, DRAIN TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
DS
GS
Figure 5. Forward Bias Safe Operating Area
Figure 6. Transfer Characteristics
60
45
V
= 10V
GS
V
= 2.5V
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
= 8.2A
D
V
= 4.5V
GS
40
30
15
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
A
I
= 1A
D
20
0
V
= 1.8V
GS
0
0.5
1.0
1.5
1
2
3
4
5
V
, DRAIN TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
DS
GS
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
2.0
1.25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= V , I = 250µA
DS D
GS
1.00
1.5
0.75
0.50
1.0
0.5
V
= 4.5V, I = 8.2A
D
GS
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
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5
FDW2601NZ Rev. A
Typical Characteristic (Continued) T = 25°C unless otherwise noted
A
1.10
1.05
1.00
0.95
0.90
4000
C
= C + C
GS GD
ISS
I
= 250µA
D
1000
C
C
+ C
OSS
DS GD
C
= C
GD
RSS
V
= 0V, f = 1MHz
GS
100
-80
-40
0
40
80
120
160
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
30
o
T , JUNCTION TEMPERATURE ( C)
V
DS
J
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs Drain to Source
Voltage
4.5
V
= 15V
DD
3.0
1.5
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 1A
= 8.2A
D
D
0
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
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6
FDW2601NZ Rev. A
Test Circuits and Waveforms
V
DS
BV
DSS
t
P
L
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
V
DS
R
L
V
Q
DD
g(TOT)
V
DS
V
GS
V
= 4.5V
GS
V
GS
+
-
Q
gs2
V
DD
DUT
V
= 1V
GS
I
g(REF)
0
Q
g(TH)
Q
Q
gs
gd
I
g(REF)
0
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveforms
t
t
ON
OFF
t
d(OFF)
R
L
t
d(ON)
V
t
t
f
DS
r
V
DS
+
90%
90%
V
GS
V
GS
-
0V
10%
10%
0
DUT
R
GS
90%
50%
V
GS
50%
PULSE WIDTH
10%
0
Figure 18. Switching Time Test Circuit
Figure 19. Switching Time Waveforms
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7
FDW2601NZ Rev. A
PSPICE Electrical Model
.SUBCKT FDW2601NZ 2 1 3 ;
CA 12 8 19.3e-10
CB 15 14 19.3e-10
CIN 6 8 1.7e-9
rev June 2004
LDRAIN
DPLCAP
5
DRAIN
2
10
RSLC2
RLDRAIN
DBREAK
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
EBREAK 5 11 17 18 33.3
EDS 14 8 5 8 1
RSLC1
51
+
5
ESLC
11
51
-
50
+
-
17
18
-
DBODY
RDRAIN
16
EBREAK
EGS 13 8 6 8 1
ESG 6 10 8 6 1
6
8
ESG
EVTHRES
+
+
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
21
-
19
8
MWEAK
LGATE
EVTEMP
+
RGATE
GATE
1
9
6
-
18
22
IT 8 17 1
MMED
20
MSTRO
8
RLGATE
LDRAIN 2 5 1e-9
DESD1
91
DESD2
LSOURCE
LGATE 1 9 0.96e-9
LSOURCE 3 7 0.19e-9
CIN
SOURCE
3
7
RSOURCE
RLDRAIN 2 5 10
RLGATE 1 9 9.6
RLSOURCE 3 7 1.9
RLSOURCE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
S1A
S1B
S2A
RBREAK
12
15
13
14
13
17
18
8
RVTEMP
19
-
S2B
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 8.8e-3
RGATE 9 20 2.75
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3e-4
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
13
CB
CA
IT
14
+
+
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*120),2.5))}
.MODEL DBODYMOD D (IS = 18.6e-12 N=0.93 RS = 6.6e-3 IKF=0.2 TRS1 = 1.7e-3 TRS2 = 2e-6 XTI=0.1 TIKF=0.001
CJO =5.2e-10 TT=8.7e-9 M = 0.58)
.MODEL DBREAKMOD D (RS = 1e-1 TRS1 = 9e-3 TRS2 = -2e-5)
.MODEL DPLCAPMOD D (CJO = 0.76e-9 IS = 1e-30 N = 10 M = 0.58)
.MODEL DESD1MOD D (BV=10.5 TBV1=-0.0018 N=9.4 RS=5)
.MODEL DESD2MOD D (BV=10.5 TBV1=-0.0018 N=9.4 RS=5)
.MODEL MMEDMOD NMOS (VTO = 1.0 KP = 1.7 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.75)
.MODEL MSTROMOD NMOS (VTO = 1.27 KP = 147 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 0.83 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 27.5 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 8.8e-4 TC2 = -13e-7)
.MODEL RDRAINMOD RES (TC1 = 1e-9 TC2 = 1e-5)
.MODEL RSLCMOD RES (TC1 = 2e-9 TC2 = 5e-8)
.MODEL RSOURCEMOD RES (TC1 = 8.2e-2 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -13e-4 TC2 = -2.8e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.3e-3 TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6 VOFF= -1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= -6)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.3)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.3 VOFF= -0.5)
ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
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8
FDW2601NZ Rev. A
SABER Electrical Model
REV June 2004
template fdw2601nz n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 18.6e-12, nl=0.93, rs = 6.6e-3, trs1 = 1.7e-3, trs2 = 2e-6, xti=0.1, cjo = 5.2e-10, ikf=0.2, tt = 8.7e-9,
m = 0.58, tikf=0.001)
dp..model dbreakmod = (rs = 1e-1, trs1 = 9e-3, trs2 = -2.0e-5)
dp..model dplcapmod = (cjo = 0.76e-9, isl=10e-30, nl=10, m=0.58)
dp..model desd1mod = (bv=10.5, tbv1=-0.0018, nl=9.4, rs=5)
dp..model desd2mod = (bv=10.5, tbv1=-0.0018, nl=9.4, rs=5)
m..model mmedmod = (type=_n, vto = 1.0, kp=1.7, is=1e-30, tox=1)
m..model mstrongmod = (type=_n, vto = 1.27, kp = 147, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 0.83, kp = 0.05, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6, voff = -1.5)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = -6 )
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.5, voff = 0.3)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.3, voff = -0.5)
LDRAIN
DPLCAP
5
DRAIN
2
10
RLDRAIN
RSLC1
51
RSLC2
c.ca n12 n8 = 19.3e-10
c.cb n15 n14 = 19.3e-10
c.cin n6 n8 = 1.7e-9
-
ISCL
DBREAK
11
50
RDRAIN
6
8
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
dp.desd1 n91 n9 = model=desd1mod
dp.desd2 n91 n7 = model=desd2mod
ESG
DBODY
EVTHRES
+
16
21
+
-
19
8
MWEAK
LGATE
EVTEMP
RGATE
GATE
1
+
6
-
18
22
EBREAK
+
MMED
9
20
DESD1
91
MSTRO
8
17
18
-
RLGATE
spe.ebreak n11 n7 n17 n18 = 33.3
spe.eds n14 n8 n5 n8 = 1
LSOURCE
CIN
SOURCE
3
DESD2
7
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
RSOURCE
RLSOURCE
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
S1A
S2A
RBREAK
12
15
13
14
13
17
18
8
RVTEMP
19
S1B
S2B
i.it n8 n17 = 1
13
CB
CA
IT
14
-
+
+
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 0.96e-9
l.lsource n3 n7 = 0.19e-9
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
22
RVTHRES
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 9.6
res.rlsource n3 n7 = 1.9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 8.8e-4, tc2 = -13e-7
res.rdrain n50 n16 = 8.8e-3, tc1 = 1e-9, tc2 = 1e-5
res.rgate n9 n20 = 2.75
res.rslc1 n5 n51= 1e-6, tc1 = 2e-9, tc2 =5e-8
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3e-4, tc1 = 8.2e-2, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -1.3e-3, tc2 = 1e-6
res.rvthres n22 n8 = 1, tc1 = -13e-4, tc2 = -2.8e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/120))** 2.5))
}
}
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9
FDW2601NZ Rev. A
SPICE Thermal Model
REV June 2004
JUNCTION
th
FDW2601NZ_JA Junction Ambient
Minimum copper pad area
CTHERM1 Junction c2 5.7e-4
CTHERM2 c2 c3 5.72e-4
CTHERM3 c3 c4 5.8e-4
CTHERM4 c4 c5 4.7e-3
CTHERM5 c5 c6 5.1e-3
CTHERM6 c6 c7 0.02
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
CTHERM1
2
3
CTHERM7 c7 c8 0.2
CTHERM8 c8 Ambient 6
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
CTHERM7
CTHERM8
RTHERM1 Junction c2 0.003
RTHERM2 c2 c3 0.25
RTHERM3 c3 c4 1.0
RTHERM4 c4 c5 1.1
RTHERM5 c5 c6 7.5
RTHERM6 c6 c7 33.6
RTHERM7 c7 c8 33.7
RTHERM8 c8 Ambient 33.8
4
5
SABER Thermal Model
SABER thermal model FDW2601NZ
Minimum copper pad area
template thermal_model th tl
thermal_c th, tl
6
7
8
{
ctherm.ctherm1 th c2 = 5.7e-4
ctherm.ctherm2 c2 c3 = 5.72e-4
ctherm.ctherm3 c3 c4 = 5.8e-4
ctherm.ctherm4 c4 c5 = 4.7e-3
ctherm.ctherm5 c5 c6 = 5.1e-3
ctherm.ctherm6 c6 c7 = 0.02
ctherm.ctherm7 c7 c8 = 0.2
ctherm.ctherm8 c8 tl = 6
rtherm.rtherm1 th c2 = 0.003
rtherm.rtherm2 c2 c3 = 0.25
rtherm.rtherm3 c3 c4 = 1.0
rtherm.rtherm4 c4 c5 = 1.1
rtherm.rtherm5 c5 c6 = 7.5
rtherm.rtherm6 c6 c7 = 33.6
rtherm.rtherm7 c7 c8 = 33.7
rtherm.rtherm8 c8 tl = 33.8
}
tl
AMBIENT
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FDW2601NZ Rev. A
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Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
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FDW2601NZ Rev. A
11
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