FDW262P_NL [FAIRCHILD]
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8;
| 型号： | FDW262P_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2001
FDW262P
20V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET is produced
• –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V
RDS(ON) = 65 mΩ @ VGS = –2.5 V
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
RDS(ON) = 100 mΩ @ VGS = –1.8 V
• RDS(ON) rated for use with 1.8 V logic
• Low gate charge (13nC typical)
Applications
• Power management
• Load switch
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
5
6
7
8
4
3
2
1
S
D
G
S
S
D
TSSOP-8
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain–Source Voltage
Ratings
Units
–20
V
V
A
VGSS
Gate-Source Voltage
±8
–4.5
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
–40
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.3
PD
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
87
RθJA
°C/W
°C/W
133
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
262P
FDW262P
13’’
16mm
3000 units
FDW262P Rev C(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
–14
ID = –250 µA, Referenced to 25°C
VDS = –16 V, VGS = 0 V
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
–1
µA
nA
nA
IGSSF
IGSSR
VGS = 8 V,
VGS = –8 V
VDS = 0 V
VDS = 0 V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.4
–0.8
2.5
–1.5
V
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID= –250 µA,
Referenced to 25°C
VGS = –4.5 V, ID = –4.5 A
VGS = –2.5 V, ID = –3.7 A
VGS = –1.8 V, ID = –3 A
mV/°C
mΩ
RDS(on)
Static Drain–Source
On–Resistance
37
50
77
48
47
65
100
65
VGS=–4.5 V, ID =–4.5A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V,
VDS = –5 V
ID = –4.5 A
–20
A
S
Forward Transconductance
16
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1193
193
96
pF
pF
pF
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
9
20
18
57
34
18
ns
ns
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
36
19
13
2.5
3.6
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
V
DS = –10 V,
ID = –4.5 A,
VGS = –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.1
–1.2
A
V
Drain–Source Diode Forward
VSD
V
GS = 0 V, IS = –1.1 A (Note 2)
–0.7
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
87°C/W when
b)
133°C/W when mounted
on a minimum pad of 2 oz
copper.
mounted on a 1in2 pad
of 2 oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW262P Rev C(W)
Typical Characteristics
40
2.2
2
VGS = -4.5V
-3.5V
-3.0V
VGS = - 2.0V
30
1.8
1.6
1.4
1.2
1
-2.5V
20
10
0
-2.5V
-3.0V
-2.0V
-1.8V
-3.5V
-4.0V
-4.5V
0.8
0
1
2
3
4
5
150
3
0
10
20
-ID, DRAIN CURRENT (A)
30
40
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.3
1.2
1.1
1
0.15
ID = -2.3A
ID = -4.5A
VGS = - 4.5V
0.12
0.09
TA = 125oC
0.06
TA = 25oC
0.9
0.8
0.03
-50
-25
0
25
50
75
100
125
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
20
15
10
5
VDS = -5V
VGS = 0V
1
TA = -55oC
25oC
TA = 125oC
125oC
0.1
25oC
0.01
-55oC
0.001
0
0.0001
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW262P Rev C(W)
Typical Characteristics
5
2000
1600
1200
800
400
0
f = 1 MHz
GS = 0 V
VDS = -5V
ID = -4.5A
V
-10V
4
3
2
1
0
-15V
CISS
COSS
CRSS
0
4
8
12
16
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
SINGLE PULSE
RθJA = 133°C/W
TA = 25°C
100µs
RDS(ON) LIMIT
40
1ms
10ms
100ms
1s
10s
DC
10
1
30
20
10
0
VGS = -4.5V
SINGLE PULSE
RθJA = 133oC/W
0.1
T
A = 25oC
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θJA(t) = r(t) + RθJA
θJA = 133oC/W
0.2
R
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW262P Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
STAR*POWER™
Stealth™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
EcoSPARK™
E2CMOSTM
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
EnSignaTM
UltraFET
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
相关型号：
FDW264P_NL
Small Signal Field-Effect Transistor, 9.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TSSOP-8
FAIRCHILD
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