FGH40N60UF [FAIRCHILD]
600V, 40A Field Stop IGBT; 600V ， 40A场截止IGBT
| 型号： | FGH40N60UF |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V, 40A Field Stop IGBT |
| 文件： | 总8页 (文件大小：706K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2008
FGH40N60UF
tm
600V, 40A Field Stop IGBT
Features
General Description
•
•
•
•
•
High current capability
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
Low saturation voltage: VCE(sat) =1.8V @ IC = 40A
High input impedance
Fast switching
RoHS compliant
Applications
•
Induction Heating, UPS, SMPS, PFC
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Description
Ratings
600
Units
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
± 20
80
@ TC = 25oC
@ TC = 100oC
IC
ICM (1)
PD
Collector Current
40
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
120
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
290
W
W
oC
oC
116
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.43
40
Units
oC/W
oC/W
-
-
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. B
1
www.fairchildsemi.com
Package Marking and Ordering Information
Max Qty
Packaging
Type
Device Marking
Device
Package
Qty per Tube
per Box
FGH40N60UF
FGH40N60UFTU
TO-247
Tube
30ea
-
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
600
-
-
-
-
V
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
0.6
V/oC
V
GE = 0V, IC = 250µA
Voltage
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
-
-
250
µA
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
4.0
-
5.0
1.8
6.5
2.4
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
-
2.0
-
V
T
C = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
2110
200
60
-
-
-
pF
pF
pF
V
CE = 30V VGE = 0V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
44
-
-
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
112
30
-
ns
VCC = 400V, IC = 40A,
R
G = 10Ω, VGE = 15V,
60
-
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
1.19
0.46
1.65
24
mJ
mJ
mJ
ns
-
-
td(on)
tr
td(off)
tf
-
45
-
ns
Turn-Off Delay Time
Fall Time
120
40
-
ns
VCC = 400V, IC = 40A,
G = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
R
-
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
1.2
0.69
1.89
120
14
-
mJ
mJ
mJ
nC
nC
nC
-
-
Qg
-
V
V
CE = 400V, IC = 40A,
GE = 15V
Qge
Qgc
-
58
-
2
www.fairchildsemi.com
FGH40N60UF Rev. B
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
TC = 125oC
15V
TC = 25oC
15V
12V
20V
20V
12V
100
80
60
40
20
0
100
80
60
40
20
0
10V
10V
VGE = 8V
4.5
VGE = 8V
4.5
0.0
1.5
3.0
6.0
0.0
1.5
3.0
6.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
120
120
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
100
100
TC = 125oC
80
80
60
40
20
0
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10
11
12
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = - 40oC
16
12
8
80A
40A
IC = 20A
80A
40A
4
IC = 20A
8
0
25
50
75
100
125
4
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
3
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FGH40N60UF Rev. B
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
16
12
8
40A
80A
40A
80A
4
4
IC = 20A
8
IC = 20A
8
0
0
4
12
16
20
4
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
5000
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
12
4000
3000
2000
1000
0
Ciss
200V
Vcc = 100V
300V
9
6
3
0
Coss
Crss
0
50
100
150
0.1
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
400
100
200
10µs
100
100µs
10
tr
1ms
10 ms
DC
1
td(on)
Common Emitter
VCC = 400V, VGE = 15V
Single Nonrepetitive
o
Pulse T = 25 C
C
Curves must be derated
linearly with increase
in temperature
IC = 40A
TC = 25oC
TC = 125oC
0.1
10
0.01
0
10
20
30
40
50
1
10
100
1000
Gate Resistance, RG [Ω]
Collector-Emitter Voltage, VCE [V]
4
www.fairchildsemi.com
FGH40N60UF Rev. B
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
5500
500
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
TC = 125oC
1000
tr
td(off)
100
100
td(on)
tf
10
20
10
40
60
80
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs. Gate Resistance
10
600
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VCC = 400V, VGE = 15V
TC = 25oC
IC = 40A
TC = 25oC
TC = 125oC
TC = 125oC
td(off)
100
Eon
tf
Eoff
1
0.3
0
10
20
10
20
30
40
50
40
60
80
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn off Switching
SOA Characteristics
10
200
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
100
Eon
TC = 125oC
Eoff
1
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
0.1
20
1
10
100
1000
40
60
80
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
5
www.fairchildsemi.com
FGH40N60UF Rev. B
Typical Performance Characteristics
Figure 19.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
6
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FGH40N60UF Rev. B
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
www.fairchildsemi.com
7
FGH40N60UF Rev. B
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Rev. I35
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