FJPF5200RTU [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | FJPF5200RTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总5页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2008
FJPF5200
NPN Epitaxial Silicon Transistor
Applications
•
•
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
•
•
•
•
•
•
•
•
•
High Current Capability: IC = 15A.
High Power Dissipation : 50watts.
High Fequency : 30MHz.
TO-220F
1.Base 2.Collector 3.Emitter
1
High Voltage : VCEO=230V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to FJPF1943
Thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO264 package, 2SC5200/FJL4315 : 150 watts
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
BVCBO
BVCEO
BVEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
230
230
5
V
V
V
A
A
15
IB
1.5
PD
Total Device Dissipation(TC=25°C)
Derate above 25°C
50
0.4
W
W/°C
TJ, TSTG
Junction and Storage Temperature
- 50 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Max.
Units
RθJC
Thermal Resistance, Junction to Case
2.5
°C/W
* Device mounted on minimum pad size
h
Classification
FE
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
www.fairchildsemi.com
1
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
IC=5mA, IE=0
Min. Typ. Max. Units
230
230
5
V
V
IC=10mA, RBE=∞
IE=5mA, IC=0
V
VCB=230V, IE=0
VEB=5V, IC=0
5.0
5.0
µA
µA
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain
VCE=5V, IC=1A
VCE=5V, IC=7A
IC=8A, IB=0.8A
VCE=5V, IC=7A
VCE=5V, IC=1A
VCB=10V, f=1MHz
55
35
160
hFE2
DC Current Gain
60
0.4
1.0
30
VCE(sat)
VBE(on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
3.0
1.5
V
V
Current Gain Bandwidth Product
Output Capacitance
MHz
pF
Cob
200
* Pulse Test: Pulse Widt=20µs, Duty Cycle≤2%
Ordering Information
Part Number
FJPF5200RTU
FJPF5200OTU
Marking
J5200R
Package
TO-220F
TO-220F
Packing Method
Remarks
hFE1 R grade
hFE1 O grade
TUBE
TUBE
J5200O
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
www.fairchildsemi.com
2
Typical Characteristics
16
14
12
10
8
IB=200mA
IB = 180mA
IB = 160mA
Tj=125oC
Tj=25oC
Vce=5V
IB = 140mA
IB = 120mA
100
10
1
Tj=-25oC
IB = 100mA
IB = 80mA
IB = 60mA
IB = 40mA
6
4
2
IB = 0
0
0
2
4
6
8
10
12
14
16
18
20
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ic[A], COLLECTORCURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
1000
100
10000
1000
100
10
Ic=10Ib
Ic=10Ib
Tj=25?
Tj=25oC
Tj=-25oC
Tj=125?
Tj=-25?
Tj=125oC
1
0.1
0.1
1
10
1
10
Ic[A], COLLECTOR CURRENT
Ic[A], COLLECTORCURRENT
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
12
3.0
2.5
2.0
1.5
1.0
0.5
VCE = 5V
10
8
6
4
2
0
0.0
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Pulse duration [sec]
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Thermal Resistance
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
www.fairchildsemi.com
3
Typical Characteristics
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
www.fairchildsemi.com
4
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Power247®
SuperSOT™-8
SyncFET™
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
FAST®
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FPS™
OPTOPLANAR®
®
UniFET™
VCX™
FRFET®
PDP-SPM™
Power220®
Global Power ResourceSM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
www.fairchildsemi.com
5
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