FJV992PD87Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon;型号: | FJV992PD87Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon |
文件: | 总5页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FJV992
Audio Frequency Low Noise Amplifier
•
Complement to FJV1845
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-120
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
-120
V
CEO
EBO
-5
V
I
-50
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
300
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
-120
-120
-5
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Emitter Breakdown Voltage
Emitter-Base Cutoff Current
DC Current Gain
I = -100µA, I =0
V
V
CBO
CEO
EBO
C
E
BV
BV
I = -1mA, I =0
C B
I = -10µA, I =0
V
E
C
I
V
= -6V, I =0
-30
nA
EBO
EB
C
h
h
V
V
= -6V, I = -0.1mA
150
200
FE1
FE2
CE
CE
C
= -6V, I = -1mA
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I = -10mA, I = -1mA
-300
mV
V
CE
C
B
V
= -6V, I = -1mA
-0.55
50
-0.65
BE
CE
CE
CB
C
f
V
V
= -6V, I = -1mA
MHz
pF
T
C
C
= -30V, I =0, f=1MHz
3
ob
E
NV
Noise Voltage
40
mV
h
Classification
FE2
Classification
P
F
E
h
200 ~ 400
300 ~ 600
400 ~ 800
FE2
Marking
2JP
hFE Classification
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
Typical Characteristics
-1.0
-10
-8
-6
-4
-2
0
IB = -1.2µA
IB = -24µA
IB = -1.2µA
IB = -20µA
IB = -16µA
IB = -1.0µA
-0.8
-0.6
-0.4
-0.2
0.0
IB = -0.8µA
IB = -0.6µA
IB = -12µA
IB = -8µA
IB = -0.4µA
IB = -0.2µA
IB = -4µA
IB = 0
IB = 0
0
-20
-40
-60
-80
-100
0
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
-1
1000
100
10
IC=10IB
VCE=-6V
Ta=1250C
Ta=250C
Ta=-250C
Ta=1250C
-0.1
Ta=250C
Ta=-250C
-0.01
-1E-3
-1E-3
-0.01
-0.1
-0.01
-0.1
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
-0.12
VCE=-6V
IC=10IB
-0.10
1
Ta=-250C
-0.08
-0.06
Ta=250C
Ta=1250C
Ta=1250C
Ta=-250C
Ta=250C
-0.04
-0.02
-0.00
0.1
1E-3
0.01
0.1
-0.2
-0.4
-0.6
-0.8
-1.0
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Base-Emitter Voltage
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
Typical Characteristics (Continued)
1000
100
10
10
VCE = -6V
IE=0
f = 1MHz
1
1
0.1
0.1
-1
-10
-100
-1000
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IE[mA], COLLECTOR CURRENT
Figure 7. Collector Output Capacitance
Figure 8. Current Gain Bandwidth Product
600
500
400
300
200
100
0
0
25
50
75
100
125
150
175
Ta[oC], AMBIENT TEMPERATURE
Figure 9. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
Package Demensions
SOT-23
0.40 ±0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 ±0.03
0.12
0.96~1.14
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
FAST®
FASTr™
FRFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
SMART START™
STAR*POWER™
Stealth™
VCX™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
POP™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
FACT™
FACT Quiet Series™
UHC™
UltraFET®
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
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