FJV992PD87Z [FAIRCHILD]

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon;
FJV992PD87Z
型号: FJV992PD87Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon

文件: 总5页 (文件大小:73K)
中文:  中文翻译
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FJV992  
Audio Frequency Low Noise Amplifier  
Complement to FJV1845  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-120  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-120  
V
CEO  
EBO  
-5  
V
I
-50  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-120  
-120  
-5  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Emitter Breakdown Voltage  
Emitter-Base Cutoff Current  
DC Current Gain  
I = -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -1mA, I =0  
C B  
I = -10µA, I =0  
V
E
C
I
V
= -6V, I =0  
-30  
nA  
EBO  
EB  
C
h
h
V
V
= -6V, I = -0.1mA  
150  
200  
FE1  
FE2  
CE  
CE  
C
= -6V, I = -1mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -10mA, I = -1mA  
-300  
mV  
V
CE  
C
B
V
= -6V, I = -1mA  
-0.55  
50  
-0.65  
BE  
CE  
CE  
CB  
C
f
V
V
= -6V, I = -1mA  
MHz  
pF  
T
C
C
= -30V, I =0, f=1MHz  
3
ob  
E
NV  
Noise Voltage  
40  
mV  
h
Classification  
FE2  
Classification  
P
F
E
h
200 ~ 400  
300 ~ 600  
400 ~ 800  
FE2  
Marking  
2JP  
hFE Classification  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  
Typical Characteristics  
-1.0  
-10  
-8  
-6  
-4  
-2  
0
IB = -1.2µA  
IB = -24µA  
IB = -1.2µA  
IB = -20µA  
IB = -16µA  
IB = -1.0µA  
-0.8  
-0.6  
-0.4  
-0.2  
0.0  
IB = -0.8µA  
IB = -0.6µA  
IB = -12µA  
IB = -8µA  
IB = -0.4µA  
IB = -0.2µA  
IB = -4µA  
IB = 0  
IB = 0  
0
-20  
-40  
-60  
-80  
-100  
0
-1  
-2  
-3  
-4  
-5  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. Static Characteristic  
-1  
1000  
100  
10  
IC=10IB  
VCE=-6V  
Ta=1250C  
Ta=250C  
Ta=-250C  
Ta=1250C  
-0.1  
Ta=250C  
Ta=-250C  
-0.01  
-1E-3  
-1E-3  
-0.01  
-0.1  
-0.01  
-0.1  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 3. DC current Gain  
Figure 4. Collector-Emitter Saturation Voltage  
-0.12  
VCE=-6V  
IC=10IB  
-0.10  
1
Ta=-250C  
-0.08  
-0.06  
Ta=250C  
Ta=1250C  
Ta=1250C  
Ta=-250C  
Ta=250C  
-0.04  
-0.02  
-0.00  
0.1  
1E-3  
0.01  
0.1  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
IC[mA], COLLECTOR CURRENT  
VBE[V], BASE-EMITTER VOLTAGE  
Figure 5. Base-Emitter Saturation Voltage  
Figure 6. Base-Emitter Voltage  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  
Typical Characteristics (Continued)  
1000  
100  
10  
10  
VCE = -6V  
IE=0  
f = 1MHz  
1
1
0.1  
0.1  
-1  
-10  
-100  
-1000  
1
10  
100  
VCB [V], COLLECTOR-BASE VOLTAGE  
IE[mA], COLLECTOR CURRENT  
Figure 7. Collector Output Capacitance  
Figure 8. Current Gain Bandwidth Product  
600  
500  
400  
300  
200  
100  
0
0
25  
50  
75  
100  
125  
150  
175  
Ta[oC], AMBIENT TEMPERATURE  
Figure 9. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  
Package Demensions  
SOT-23  
0.40 ±0.03  
0.03~0.10  
0.38 REF  
+0.05  
–0.023  
0.40 ±0.03  
0.12  
0.96~1.14  
2.90 ±0.10  
0.95 ±0.03 0.95 ±0.03  
1.90 ±0.03  
0.508REF  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
Bottomless™  
CoolFET™  
FAST®  
FASTr™  
FRFET™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
SMART START™  
STAR*POWER™  
Stealth™  
VCX™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MicroPak™  
MICROWIRE™  
POP™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
Power247™  
PowerTrench®  
QFET™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
FACT™  
FACT Quiet Series™  
UHC™  
UltraFET®  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H4  

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