FQD20N06_09 [FAIRCHILD]
60V N-Channel MOSFET; 60V N沟道MOSFET型号: | FQD20N06_09 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 60V N-Channel MOSFET |
文件: | 总9页 (文件大小:750K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
January 2009
QFET®
FQD20N06 / FQU20N06
60V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
•
•
•
•
•
•
•
•
16.8A, 60V, R
= 0.063Ω @ V = 10V
DS(on) GS
Low gate charge ( typical 11.5 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
o
150 C maximum junction temperature rating
RoHS Compliant
D
D
!
"
! "
"
I-PAK
FQU Series
D-PAK
FQD Series
!
G
"
G
S
G
D
S
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQD20N06 / FQU20N06
Units
V
V
I
Drain-Source Voltage
60
16.8
10.6
67.2
± 25
155
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
16.8
3.8
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
AR
dv/dt
7.0
Power Dissipation (T = 25°C) *
2.5
P
A
D
Power Dissipation (T = 25°C)
38
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.30
-55 to +150
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
3.28
50
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
θJC
θJA
θJA
--
--
110
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
60
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
J
I
= 250 µA, Referenced to 25°C
0.07
V/°C
D
/
I
∆T
V
V
V
V
= 60 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 48 V, T = 125°C
10
DS
GS
GS
C
I
I
= 25 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -25 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
2.0
--
4.0
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
--
--
DS(on)
=10V,I =8.4A
0.050 0.063
D
g
= 25 V, I = 8.4 A
(Note 4)
Forward Transconductance
--
10
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
450
170
25
590
220
35
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
5
45
20
25
11.5
3
20
100
50
60
15
--
ns
ns
d(on)
V
= 30 V, I = 10 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 48 V, I = 20 A,
DS
D
= 10 V
gs
gd
GS
4.5
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
16.8
67.2
1.5
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 16.8 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 20 A,
43
50
ns
nC
rr
GS
F
dI / dt = 100 A/µs
Q
(Note 4)
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 640µH, I = 16.8A, V = 25V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 20A, di/dt ≤ 300A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
Typical Characteristics
V
Top :
15.0GVS
10.0V
8.0V
7.0V
6.0V
5.5V
101
Bottom: 5.0 V
101
100
℃
150
℃
25
※
Notes :
1. V = 25V
2. 250 s Pulse Test
※
Notes :
μ
DS μ
1. 250 s Pulse Test
2. TC = 25
℃
-55
℃
100
-1
10
-1
100
101
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
80
60
40
20
0
VGS = 10V
VGS = 20V
101
100
※
Notes :
1. V = 0V
℃
℃
25
※
℃
150
GS μ
Note : T = 25
J
2. 250 s Pulse Test
-1
0
10
20
30
40
50
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
1200
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
gd
VDS = 30V
VDS = 48V
C
800
400
0
oss
※
Notes :
C
iss
1. VGS = 0 V
2. f = 1 MHz
6
4
C
rss
2
※
Note : ID = 20A
10
0
0
2
4
6
8
12
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
Typical Characteristics (Continued)
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
※
Notes:
1. VGS = 0 V
0.9
0.8
※
Notes :
μ
2. ID = 250
A
1. VGS = 10 V
2. ID = 8.4 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
103
20
15
10
5
Operation in This Area
is Limited by RDS(on)
102
101
100
10-1
100 µs
1 ms
10 ms
DC
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
0
25
10-1
100
101
102
50
75
100
125
150
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
※
N o t e s
1 . Z θ J C(t )
2 . D u t y Fa c t o r , D =t 1 /t 2
3 . T J M TC P D M Z θ J C(t )
:
℃
/W M a x.
=
3 .2 8
0 .1
-
=
*
0 .0 5
0 .0 2
1 0 -1
0 .0 1
PDM
s in g le p u ls e
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
Gate Charge Test Circuit & Waveform
VGS
Same Type
50Kꢀ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
Package Dimensions
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
Package Dimensions (Continued)
IPAK
2.30 ±0.20
0.50 ±0.10
6.60 ±0.20
5.34 ±0.20
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
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Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
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Not In Production
Rev. I37
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