FS6S0765RCHYDTU [FAIRCHILD]
Fairchild Power Switch(FPS); 飞兆功率开关( FPS )型号: | FS6S0765RCHYDTU |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Fairchild Power Switch(FPS) |
文件: | 总12页 (文件大小:592K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
www.fairchildsemi.com
FS6S0765RCH
Fairchild Power Switch(FPS)
Features
Description
• Wide Operating Frequency Range up to 150KHz
• Internal Burst Mode Controller for Stand-by Mode
• Pulse by Pulse Over Current Limiting
• Over Current Protection(Auto Restart Mode)
• Over Voltage Protection (Auto Restart Mode)
• Over Load Protection(Auto Restart Mode)
• Internal Thermal Shutdown Function(Auto Restart Mode)
• Under Voltage Lockout
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator,
under voltage lock out, optimized gate turn on/turn off driver,
thermal shutdown protection, over voltage protection, and
temperature compensated precision current sources for loop
compensation and fault protection circuitry. Compared with
discrete MOSFET and controller or RCC switching converter
solution, the Fairchild Power Switch(FPS) can reduce total
component count, design size, and weight and at the same
time increase efficiency, productivity and system reliability.
It has a basic platform well suited for cost effective monitor
power supply.
• Internal High Voltage SenseFET(CFET)
• Eternal Sync Terminal/Soft Start
TO-220-5L
1
1. Drain 2. GND 3. V
CC
4. Feedback 5. Soft Start & Sync.
Internal Block Diagram
Dra in
Vc c
3
1
Vre f
Vp p=5.8/ 7.2V
S o ftS ta rt
& S ync
Inte rna l
Vre f
OSC
Bia s
5
Vre f
UVLO
Burs t m o d e
c o ntrolle r
Vfb
Vth=1V
S
Ron
Q
R
Vc c
Vth=11V/ 12V
Ro ff
Fe e d b a c k
PWM
4
2.5R
R
Ifb
Vfb Offs e t
Vre f
Vc c
Rs e ne s e
Vth=1V
Id e la y
OCL
Filte r
(130ns e c )
OLP
GND
2
Vth=7.5V
TS D
(Tj=160
S
R
Q
℃
)
Vc c
UVLO Re s e t
(Vc c =9V)
OVP
Vth=30V
Rev.1.0.0
©2002 Fairchild Semiconductor Corporation
FS6S0765RCH
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-Source(GND) Voltage (1)
Symbol
Value
650
Unit
V
V
DSS
Drain-Gate Voltage (R =1MΩ)
V
DGR
650
V
GS
Gate-Source (GND) Voltage
Drain Current Pulsed (2)
V
±30
V
GS
DM
I
28
A
DC
Single Pulsed Avalanche Energy (3)
Single Pulsed Avalanche Current (4)
Continuous Drain Current (Tc = 25°C)
E
I
370
mJ
A
AS
17
AS
I
I
7
A
D
D
DC
DC
V
Continuous Drain Current (T =100°C)
4.5
A
C
Supply Voltage
V
35
CC
V
-0.3 to Vcc
-0.3 to 10
145
V
FB
Input Voltage Range
V
V
S_S
P (Watt H/S)
D
W
W/°C
°C
Total Power Dissipation
Darting
1.16
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
T
+150
-25 to +85
-55 to +150
j
T
°C
A
T
STG
°C
Note:
1. T = 25°C to 150°C
j
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 14mH, starting T = 25°C
j
4. L = 13uH, starting T = 25°C
j
2
FS6S0765RCH
Electrical Characteristics (SenseFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
BV
Condition
= 0V, I = 250µA
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
V
V
650
-
-
-
-
V
DSS
GS
DS
D
= 650V, V
= 0V
200
µA
GS
Zero Gate Voltage Drain Current
I
DSS
V
V
= 520V
= 0V, T = 125°C
DS
GS
-
-
300
µA
C
Static Drain-Source on Resistance (note)
Forward Transconductance
Input Capacitance
R
V
V
= 10V, I = 3.5A
D
-
-
-
-
-
-
-
-
-
1.4
8
1.6
Ω
DS(ON)
GS
DS
gfs
= 40V, I = 3.5A
-
-
-
-
-
-
-
-
mho
D
Ciss
1415
100
15
V
= 0V, V = 25V,
DS
GS
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Coss
Crss
pF
nS
f = 1MHz
td(on)
tr
V
= 325V, I = 6.5A
DD
25
D
(MOSFET switching
time is essentially
independent of
60
Turn Off Delay Time
Fall Time
td(off)
tf
115
65
operating temperature)
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
= 10V, I = 6.5A,
D
= 520V (MOSFET
GS
DS
Qg
-
40
-
switching time is essentially
independent of
operating temperature)
nC
Gate Source Charge
Qgs
Qgd
-
-
7
-
-
Gate Drain (Miller) Charge
12
Note:
Pulse test : Pulse width ≤ 300µS, duty 2%
3
FS6S0765RCH
Electrical Characteristics (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Frequency
V
V
V
= GND
14
8
15
9
16
10
V
V
START
FB
FB
V
= GND
STOP
F
-
22
0
25
1
28
3
kHz
%
OSC
Voltage Stability
F
12V ≤ Vcc ≤ 23V
STABLE
Temperature Stability (2)
Maximum Duty Cycle
Minimum Duty Cycle
∆F
-25°C ≤ Ta ≤ 85°C
0
±5
95
-
±10
98
0
%
OSC
MAX
D
-
-
92
-
%
D
%
MIN
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
PROTECTION SECTION
Over Voltage Protection
Over Current Latch Voltage (1)
Thermal Shutdown Temp.(2)
I
V
= GND
0.7
6.9
1.6
0.9
7.5
2.0
1.1 mA
FB
FB
V
Vfb ≥ 6.9V
8.1
2.4
V
SD
Idelay
V
V
= 5V
µA
FB
V
V
≥ 27V
27
30
33
1.1
-
V
V
OVP
CC
-
-
0.9
1.0
OCL
T
140 160
°C
SD
Note:
1. These parameters, although guaranteed, are tested in EDS(wafer test) process.
2. These parameters, although guaranteed at the design, are not tested in mass production
4
FS6S0765RCH
Electrical Characteristics (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
SYNC & SOFTSTART SECTION
Softstart Voltage
V
Vfb = 2
4.7
0.8
-
5.0
1.0
7.2
5.8
5.3
V
SS
Softstart Current
I
Vss = V
1.2 mA
SS
Sync High Threshold Voltage
Sync Low Threshold Voltage
BURST MODE SECTION
V
Vcc = 16V, Vfb = 5V
Vcc = 16V, Vfb = 5V
-
-
V
V
SH
V
-
SL
Burst Mode Low Threshold Voltage
Burst Mode High Threshold Voltage
Burst Mode Enable Feedback Voltage(3)
Burst Mode Peak Current Limit(2)
Burst Mode Frequency
V
Vfb = 0V
10.4 11.0 11.6
11.4 12.0 12.6
V
V
V
V
BURL
V
Vfb = 0V
BURH
V
Vcc = 10.5V
Vcc = 10.5V
Vcc = 10.5V, Vfb = 0V
0.7
0.45 0.6 0.75
40 50
1.0
1.3
BEN
I
BU_PK
F
60 KHz
BUR
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit(2)
TOTAL DEVICE SECTION
Start Up Current
I
-
3.52 4.0 4.48
A
OVER
I
Vfb = GND, V
Vfb = GND, V
Vfb = GND, V
Vfb = GND, V
= 14V
= 16V
= 10V
= 28V
-
-
0.1 0.17 mA
START
CC
CC
CC
CC
I
OP
OP(MIN)
Operating Supply Current (1)
I
10
15
mA
I
OP(MAX)
Note:
1. These parameters are the current flowing in the control IC.
2. These parameters indicate Inductor current.
3. These parameters, although guaranteed at the design, are not tested in mass production.
5
FS6S0765RCH
Typical Performance Characteristics
[mA]
[mA]
0.150
11.0
10.5
10.0
9.5
0.125
0.100
0.075
0.050
9.0
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 2. Operating Current vs. Temp.
Figure 1. Start Up Current vs. Temp.
[V]
[V]
16.0
10.0
9.5
9.0
8.5
8.0
15.5
15.0
14.5
14.0
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
vs. Temp.
Figure 3. Start Threshold Voltage
Figure 4. Stop Threshold Voltage vs. Temp.
[KHz]
[%]
96.0
95.5
95.0
94.5
94.0
28
27
26
25
24
23
22
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
vs. Temp.
Figure 5. Initial Frequency
vs. Temp.
Figure 6. Maximum Duty
6
FS6S0765RCH
Typical Performance Characteristics (Continued)
[mA]
[V]
1.1
1.0
0.9
0.8
0.7
0.45
0.40
0.35
0.30
0.25
0.20
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 7. Feedback Offset Voltage vs. Temp.
Figure 8. Feedback Source Current vs. Temp.
[V]
7.60
[uA]
2.4
2.2
2.0
1.8
1.6
7.55
7.50
7.45
7.40
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 9. Shutdown Delay Current vs. Temp.
Figure 10. Shutdown Feedback Voltage vs. Temp.
O
[V]
[V]
31.0
30.5
30.0
29.5
29.0
5.02
5.01
5.00
4.99
4.98
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 11. Softstart Voltage vs. Temp.
Figure 12. Over Voltage Protection vs. Temp.
7
FS6S0765RCH
Typical Performance Characteristics (Continued)
[V]
[V]
12.2
11.2
11.1
11.0
10.9
10.8
12.1
12.0
11.9
11.8
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 14. Burst Mode High Voltage vs. Temp.
Figure 13. Burst Mode Low Voltage vs. Temp.
[KHz]
[V]
1.3
1.2
1.1
1.0
0.9
0.8
0.7
54
52
50
48
46
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 16. Burst Mode Enable Voltage vs. Temp.
Figure 15. Burst Mode Frequency vs. Temp.
[A]
[A]
0.75
0.70
0.65
0.60
0.55
0.50
0.45
4.4
4.2
4.0
3.8
3.6
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 17. Burst Mode Peak Current vs. Temp.
Figure 18. Peak Current Limit vs. Temp.
8
FS6S0765RCH
Package Dimensions
TO-220-5L
9
FS6S0765RCH
Package Dimensions (Continued)
TO-220-5L(Forming)
10
FS6S0765RCH
Ordering Information
Product Number
Package
Marking Code
BVdss
Rds(on)
1.4
FS6S0765RCHTU
TO-220-5L
6S0765RC
H
650V
FS6S0765RCHYDTU
TO-220-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type
11
FS6S0765RCH
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
9/30/02 0.0m 001
Stock#DSxxxxxxxx
2002 Fairchild Semiconductor Corporation
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