H11F23SD_技术文档

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

PACKAGE

SCHEMATIC

OUTPUT

TERM.

1

2

ANODE

6

5

6

CATHODE

1

OUTPUT

TERM.

4

3

6

DESCRIPTION

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-

detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

FEATURES

As a remote variable resistor

•

≤ 100Ω to ≥ 300 MΩ

≥ 99.9% linearity

≤ 15 pF shunt capacitance

≥ 100 GΩ I/O isolation resistance

As an analog switch

•

Extremely low offset voltage

60 V signal capability

No charge injection or latch-up

pk-pk

t

, t ≤ 15 µS

on off

UL recognized (File #E90700)

VDE recognized (File #E94766)

– Ordering option ‘300’ (e.g. H11F1.300)

APPLICATIONS

As a variable resistor –

•

Isolated variable attenuator

Automatic gain control

Active ﬁlter ﬁne tuning/band switching

As an analog switch –

•

Isolated sample and hold circuit

Multiplexed, optically isolated A/D conversion

Page 1 of 10

3/19/03

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

Absolute Maximum Ratings (T = 25°C unless otherwise speciﬁed)

A

Parameter

Symbol

Device

Value

Units

TOTAL DEVICE

Storage Temperature

Operating Temperature

Lead Solder Temperature

EMITTER

T

All

-55 to +150

-55 to +100

°C

STG

T

OPR

T

260 for 10 sec

SOL

Continuous Forward Current

Reverse Voltage

I

All

60

5

mA

V

F

V

R

Forward Current - Peak (10 µs pulse, 1% duty cycle)

LED Power Dissipation 25°C Ambient

Derate Linearly From 25°C

I

1

A

F(pk)

100

1.33

mW

mW/°C

P

All

D

DETECTOR

Detector Power Dissipation @ 25°C

Derate linearly from 25°C

300

4.0

30

mW

mW/°C

V

P

All

D

H11F1, H11F2

H11F3

Breakdown Voltage (either polarity)

BV

4-6

15

V

Continuous Detector Current (either polarity)

I

All

100

mA

4-6

ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise speciﬁed.)

A

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter

Test Conditions

Symbol

Device

Min

Typ*

Max Unit

EMITTER

Input Forward Voltage

Reverse Leakage Current

Capacitance

I = 16 mA

V

All

1.3

50

1.75

10

V

F

V = 5 V

I

µA

pF

R

V = 0 V, f = 1.0 MHz

C

J

OUTPUT DETECTOR

H11F1, H11F2

30

15

Breakdown Voltage

Either Polarity

I

= 10µA, I = 0

BV

4-6

V

4-6

F

H11F3

All

V

= 15 V, I = 0

50

nA

µA

4-6

F

Off-State Dark Current

I

4-6

V

= 15 V, I = 0, T = 100°C

All

4-6

F

A

Off-State Resistance

Capacitance

V

= 15 V, I = 0

R

C

All

300

MΩ

pF

4-6

F

4-6

V

= 15 V, I = 0, f = 1MHz

All

15

4-6

F

4-6

Page 2 of 10

3/19/03

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

ISOLATION CHARACTERISTICS

Parameter

Test Conditions

f = 60Hz, t = 1 min.

Symbol

Min

Typ*

Max

Units

Input-Output Isolation Voltage

Isolation Resistance

V

5300

Vac (rms)

ISO

11

V

= 500 VDC

R

C

10

Ω

I-O

ISO

Isolation Capacitance

V

= 0, f = 1.0 MHz

2

pF

I-O

TRANSFER CHARACTERISTICS (T = 25°C Unless otherwise speciﬁed.)

A

DC Characteristics

Test Conditions

Symbol

Device

Min

Typ*

Max

Units

H11F1

H11F2

H11F3

H11F1

H11F2

H11F3

200

330

470

200

330

470

On-State Resistance

I = 16 mA, I = 100 µA

R

Ω

F

4-6

On-State Resistance

I = 16 mA, I = 100 µA

R

Ω

F

6-4

Resistance, non-linearity

and assymetry

I = 16mA, I = 25 µA RMS,

F 4-6

All

0.1

%

f = 1kHz

AC Characteristics

Test Conditions

Symbol

Device

Min

Typ*

Max

Units

Turn-On Time

Turn-Off Time

R

= 50Ω, I = 16mA, V = 5V

t

All

25

µS

L

F

4-6

on

= 50Ω, I = 16mA, V = 5V

t

L

F

4-6

off

Page 3 of 10

3/19/03

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

Figure 1. Resistance vs. Input Current

Figure 2. Output Characteristics

800

I

F

= 18mA

= 14mA

= 10mA

I

600

400

200

0

F

I

10

F

I

= 6mA

F

I

= 2mA

F

I

= 2mA

F

I

= 6mA

F

-200

-400

-600

-800

1

= 10mA

= 14mA

I

= 18mA

F

Normalized to:

I

= 16 mA

F

= 5 µA RMS

46

0.1

-0.2

-0.1

0.0

0.1

0.2

1

10

100

V

- OUTPUT VOLTAGE (V)

46

I

- INPUT CURRENT - mA

F

Figure 3. LED Forward Voltage vs. Forward Current

Figure 4. Off-state Current vs. Ambient Temperature

10000

2.0

1.8

1.6

1.4

1.2

NORMALIZED TO:

= 15V

V

46

= 0mA

I

F

T

A

= 25°C

1000

100

10

T

= -55°C

= 25°C

A

T

A

1.0

0.8

T

A

= 100°C

1

0.1

1

10

100

0

20

40

60

80

100

T

- AMBIENT TEMPERATURE (°C)

A

I

- LED FORWARD CURRENT - mA

F

Figure 5. Resistance vs. Temperature

Figure 6. Region of Linear Resistance

100

80

100

80

3

2

NORMALIZED TO

I_F= 16mA

I_4-6= 25µA RMS

T_A= 25˚C

MAXIMUM

RMS

VOLTAGE

60

40

60

40

20

Observed

Range

1K

10

8

10

8

1

6

MAXIMUM

RMS

CURRENT

0.8

4

0.6

2

1

2

0.4

-50

100

1000

10K

100K

-25

0

25

50

75

100

T

A

- AMBIENT TEMPERATURE - °C

r(on) RESISTANCE - Ω

Page 4 of 10

3/19/03

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

Figure 7. Resistive non-linearity vs. D.C. Bias

5

4

3

2

I

= 10 µA RMS

4-6

r(on) = 200 Ω

1

0

1

50

100

150

200

250

300

350

V

4-6

- D.C. BIAS VOLTAGE - mA

Page 5 of 10

3/19/03

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

TYPICAL APPLICATIONS

AS A VARIABLE RESISTOR

AS AN ANALOG SIGNAL SWITCH

ISOLATED SAMPLE AND HOLD CIRCUIT

ISOLATED VARIABLE ATTENUATORS

500K

+

V_IN

-

V_OUT

V_IN

50Ω

V_IN

I_F

V_OUT

H11F1

C

I_F

V_OUT

I_F

LOW FREQUENCY

t

I_F

HIGH FREQUENCY

DYNAMIC RANGE ≈ 70db

FOR 0 ≤ I_F≤ 30mA

DYNAMIC RANGE ≈ 50db

FOR 0 ≤ I_F≤ 30mA

@10KHz

@1MHz

Accuracy and range are improved over conventional FET

switches because the H11F has no charge injection from the

control signal. The H11F also provides switching of either

polarity input signal up to 30V magnitude.

Distortion free attenuation of low level A.C. signals is accom-

plished by varying the IRED current, I Note the wide dynamic

F

range and absence of coupling capacitors; D.C. level shifting or

parasitic feedback to the controlling function.

AUTOMATIC GAIN CONTROL

MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION

CALL V1

H11F1

CALL

V_n

DATA

V_OUT

V_IN

ACQUISITION

V₁

V₂

H74A1

+

-

MSB

LSB

MSB

LSB

A/D

CONVERTER

PROCESS

CONTROL

LOGIC

V_n

H74A1

H11F1

I_F

SYSTEM

500K

H11F1

AGC

SIGNAL

This simple circuit provides over 70db of stable gain control for

an AGC signal range of from 0 to 30mA. This basic circuit can

be used to provide programmable fade and attack for electronic

music.

The optical isolation, linearity and low offset voltage of the

H11F allows the remote multiplexing of low level analog signals

from such transducers as thermocouplers, Hall effect devices,

strain gauges, etc. to a single A/D converter.

ACTIVE FILTER FINE TUNING/BAND SWITCHING

TEST EQUIPMENT - KELVIN CONTACT POLARITY

I_F1

I_F2

H11F1

I_F

A

C

I_TEST

DEVICE

UNDER

TEST

I

_FTO

A1

A2

A & B FOR

POLARITY 1

A3

PARAMETER

SENSING

BOARD

C & D FOR

POLARITY 2

B

D

I_F

H11F1

I_F1ADJUSTS f₁, I_F2ADJUSTS f₂

In many test equipment designs the auto polarity function uses

reed relay contacts to switch the Kelvin Contact polarity. These

reeds are normally one of the highest maintenance cost items

due to sticking contacts and mechanical problems. The totally

solid-State H11F eliminates these troubles while providing

faster switching.

The linearity of resistance and the low offset voltage of the

H11F allows the remote tuning or band-switching of active

ﬁlters without switching glitches or distortion. This schematic

illustrates the concept, with current to the H11F1 IRED’s

controlling the ﬁlter’s transfer characteristic.

Page 6 of 10

3/19/03

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

Package Dimensions (Through Hole)

Package Dimensions (Surface Mount)

0.350 (8.89)

0.330 (8.38)

PIN 1

ID.

PIN 1

ID.

3

2

1

0.270 (6.86)

0.240 (6.10)

0.270 (6.86)

0.240 (6.10)

0.350 (8.89)

0.330 (8.38)

4

5

6

0.070 (1.78)

0.045 (1.14)

0.300 (7.62)

TYP

0.070 (1.78)

0.045 (1.14)

0.200 (5.08)

0.135 (3.43)

0.200 (5.08)

0.165 (4.18)

0.016 (0.41)

0.008 (0.20)

0.020 (0.51)

MIN

0.020 (0.51)

0.154 (3.90)

0.100 (2.54)

0.016 (0.40) MIN

MIN

0.022 (0.56)

0.016 (0.41)

0.100 (2.54)

TYP

0.315 (8.00)

MIN

0.016 (0.40)

0.008 (0.20)

0.405 (10.30)

MAX

0.300 (7.62)

TYP

0.022 (0.56)

0.016 (0.41)

0° to 15°

Lead Coplanarity : 0.004 (0.10) MAX

0.100 (2.54)

TYP

Package Dimensions (0.4” Lead Spacing)

Recommended Pad Layout for

Surface Mount Leadform

0.270 (6.86)

0.240 (6.10)

0.070 (1.78)

0.060 (1.52)

0.350 (8.89)

0.330 (8.38)

0.070 (1.78)

0.045 (1.14)

0.415 (10.54)

0.100 (2.54)

0.295 (7.49)

0.030 (0.76)

0.200 (5.08)

0.135 (3.43)

0.154 (3.90)

0.100 (2.54)

0.016 (0.40)

0.008 (0.20)

0.004 (0.10)

MIN

0° to 15°

0.022 (0.56)

0.016 (0.41)

0.400 (10.16)

TYP

0.100 (2.54) TYP

NOTE

All dimensions are in inches (millimeters)

Page 7 of 10

3/19/03

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

ORDERING INFORMATION

Option

Order Entry Identiﬁer

Description

S

.S

.SD

Surface Mount Lead Bend

Surface Mount; Tape and Reel

0.4" Lead Spacing

SD

W

.W

300

.300

.300W

.3S

VDE 0884

300W

3S

VDE 0884, 0.4" Lead Spacing

VDE 0884, Surface Mount

VDE 0884, Surface Mount, Tape and Reel

3SD

.3SD

MARKING INFORMATION

1

2

H11F1

6

V XX YY K

5

3

4

Deﬁnitions

1

2

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

3

4

5

6

Two digit year code, e.g., ‘03’

Two digit work week ranging from ‘01’ to ‘53’

Assembly package code

Page 8 of 10

3/19/03

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

Carrier Tape Specifications

12.0 0.1

4.85 0.20

4.0 0.1

Ø1.55 0.05

0.30 0.05

4.0 0.1

1.75 0.10

7.5 0.1

16.0 0.3

13.2 0.2

9.55 0.20

Ø1.6 0.1

10.30 0.20

0.1 MAX

User Direction of Feed

NOTE

All dimensions are in inches (millimeters)

Tape and reel quantity is 1,000 units per reel

Reﬂow Proﬁle (Black Package, No Sufﬁx)

300

250

215°C, 10–30 s

225 C peak

200

150

Time above 183°C, 60–150 sec

Ramp up = 3C/sec

100

50

0

• Peak reflow temperature: 225°C (package surface temperature)

• Time of temperature higher than 183°C for 60–150 seconds

• One time soldering reflow is recommended

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

Time (Minute)

Page 9 of 10

3/19/03

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

Page 10 of 10

3/19/03


型号：	H11F23SD
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	FET Output Optocoupler, 1-Element, 5300V Isolation, LEAD FREE, DIP-6 输出元件光电
文件：	总10页 (文件大小：553K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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