HGTP20N35G3VL [FAIRCHILD]
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs; 20A ， 350V N沟道逻辑电平，电压钳位的IGBT
| 型号： | HGTP20N35G3VL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 文件： | 总8页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
December 2001
Features
Packages
JEDEC TO-220AB
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
COLLECTOR
GATE
EMITTER
COLLECTOR
(FLANGE)
• Ignition Energy Capable
JEDEC TO-262AA
EMITTER
Description
COLLECTOR
GATE
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis-
tor are provided in the gate circuit.
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
(FLANGE)
PACKAGING AVAILABILITY
GATE
PART NUMBER
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
PACKAGE
T0-220AB
T0-262AA
T0-263AB
BRAND
20N35GVL
EMITTER
20N35GVL
20N35GVL
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
The development type number for this device is TA49076.
R1
GATE
R2
EMITTER
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
UNITS
Collector-Emitter Bkdn Voltage At 10mA, R = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV
375
24
20
20
±10
26
18
775
150
V
V
A
A
V
GE
CER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
o
Collector Current Continuous At V = 5.0V, T = +25 C, Figure 7 . . . . . . . . . . . . . I
GE
C
C25
o
At V = 5.0V, T = +100 C . . . . . . . . . . . . . . . . . . . . I
GE
C
C100
Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
SCIS
SCIS
o
Inductive Switching Current At L = 2.3mH, T = +25 C . . . . . . . . . . . . . . . . . . . . . . I
A
A
C
o
At L = 2.3mH, T
= +175 C . . . . . . . . . . . . . . . . . . . . . . I
C
o
Collector to Emitter Avalanche Energy At L = 2.3mH, T = +25 C . . . . . . . . . . . . . . E
Power Dissipation Total At T = +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T > +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mJ
W
C
AS
o
C
D
o
o
1.0
-40 to +175
260
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T , T
C
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
6
KV
NOTE: May be exceeded if I is limited to 10mA.
GEM
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
o
Electrical Specifications
T
= +25 C, Unless Otherwise Specified
C
LIMITS
TYP
345
PARAMETERS
SYMBOL
BV
TEST CONDITIONS
MIN
310
320
320
300
315
315
-
MAX
380
380
390
375
375
390
-
UNITS
o
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
I
V
= 10mA,
= 0V
T
T
T
T
T
T
T
= +175 C
V
V
V
V
V
V
V
CES
C
C
C
C
C
C
C
C
GE
o
= +25 C
350
o
= -40 C
355
o
BV
I
V
R
= 10mA
C
= +175 C
340
CER
= 0V
= 1kΩ
GE
o
= +25 C
345
GE
o
= -40 C
350
o
Gate-Emitter Plateau Voltage
Gate Charge
V
I
V
= 10A
= +25 C
3.7
GEP
C
= 12V
CE
o
Q
I
V
V
= 10A
= 5V
= 12V
T
T
= +25 C
-
28.7
360
-
nC
V
G(ON)
C
C
C
GE
CE
o
Collector-Emitter Clamp Bkdn. Voltage
BV
I
= 10A
C
= +175 C
325
395
CE(CL)
R
= 0Ω
G
o
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
BV
I
= 10mA
T
T
T
T
T
T
T
= +25 C
20
32
-
-
V
µA
µA
V
ECS
C
C
C
C
C
C
C
C
o
I
V
= 250V
= 250V
= +25 C
-
5
CES
CE
CE
o
V
= +175 C
-
-
250
1.6
1.5
2.8
3.5
2.3
o
Collector-Emitter Saturation Voltage
V
I
V
= 10A
C
= +25 C
-
-
1.3
1.25
1.6
1.9
1.8
CE(SAT)
= 4.5V
GE
GE
CE
o
= +175 C
V
o
I
V
= 20A
= 5.0V
= +25 C
-
V
C
o
= +175 C
-
V
o
Gate-Emitter Threshold Voltage
V
I
V
= 1mA
= V
GE
T
= +25 C
1.3
V
GE(TH)
C
C
o
Gate Series Resistance
R
R
T
T
= +25 C
-
10
1.0
17
-
25
kΩ
kΩ
µA
V
1
2
C
C
o
Gate-Emitter Resistance
= +25 C
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
I
V
= ±10V
= ±2mA
±400
±12
-
±590
±14
15
±1000
-
GES
GE
BV
I
I
GES
GES
t
+
= 10A, R = 25Ω,
30
µs
D(OFF)I
C
G
t
L = 550µH, R = 26.4Ω, V = 5V,
F(OFF)I
L GE
o
V
= 300V, T = +175 C
C
CL
o
Inductive Use Test
Thermal Resistance
I
L = 2.3mH,
T
T
= +175 C
18
26
-
-
-
-
-
-
A
A
SCIS
C
C
V
= 5V,
G
o
R
= 0Ω
= +25 C
G
o
R
1.0
C/W
θJC
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
100
80
50
40
30
7V
VGE=10V
6.5V
6.0V
5.5V
5.0V
60
40
T
C = +175oC
TC = +25oC
C = -40oC
4.5V
20
10
4.0V
3.5V
T
20
0
3.0V
2.5V
0
1
2
3
4
5
6
2
4
6
8
10
0
VGE, GATE-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
50
40
30
20
10
0
TC = +175oC
-40oC
VGE = 4.5V
40
+25oC
VGE = 5.0V
30
20
+175oC
VGE = 4.5V
VGE = 4.0V
10
0
1
3
5
0
2
4
0
1
2
3
4
VCE(SAT) , SATURATION VOLTAGE (V)
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
2.2
2.1
1.4
ICE = 10A
ICE = 20A
VGE = 4.0V
VGE = 4.5V
VGE = 4.0V
VGE = 4.5V
2.0
1.9
1.8
1.7
1.3
1.2
1.1
VGE = 5.0V
VGE = 5.0V
1.6
1.5
+125
TJ, JUNCTION TEMPERATURE (oC)
+175
+75
-25
+25
+75
+125
+25
-25
+175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
25
1.2
ICE = 1mA
VGE = 5.0V
1.1
1.0
20
15
10
PACKAGE LIMITED
0.9
0.8
0.7
5
0
0.6
0.5
+50
+25
+75
+125
+150
+175
+100
-25
+25
+75
+125
+175
TJ, JUNCTION TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
FIGURE 7. COLLECTOR-EMITTER CURRENTAS A FUNCTION
OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
18
16
105
104
VCL= 300V, RGE = 25Ω, VGE = 5V, L= 550µH
VECS = 20V
103
102
101
ICE = 6A, RL= 50Ω
14
ICE =10A, RL= 30Ω
VCES = 250V
12
10
ICE =15A, RL= 20Ω
100
10-1
+175
+50
+100
TJ, JUNCTION TEMPERATURE (oC)
+175
+150
TJ, JUNCTION TEMPERATURE (oC)
+25
+75
+125
+150
+50
+75
+100
+125
+25
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
45
1200
VGE = 5V
VGE = 5V
40
35
1000
+25oC
+25oC
30
25
800
600
20
15
+175oC
+175oC
400
10
5
200
0
2
4
6
8
10
0
2
4
6
8
10
INDUCTANCE (mH)
INDUCTANCE (mH)
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING
ENERGY AS A FUNCTION OF INDUCTANCE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC
1600
1400
1200
1000
12
10
8
6
5
FREQUENCY = 1MHz
VCE = 12V
4
3
CIES
800
600
6
4
VCE = 8V
VCE = 4V
2
1
0
COES
400
200
2
0
CRES
5
20
QG, GATE CHARGE (nC)
30
40
20
25
0
10
0
10
15
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
100
0.5
350
345
340
335
ICER = 10mA
t1
0.2
PD
0.1
t2
10-1
0.05
TC = +25oC AND +175oC
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
10-2
SINGLE PULSE
10-5
10-3
t1, RECTANGULAR PULSE DURATION (s)
0
2000
4000
6000
8000
10000
10-1
101
R
GE, GATE-TO-EMITTER RESISTANCE (V)
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE - EMITTER RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
Spec Number
Test Circuits
RL
2.3mH
VDD
L = 550µH
C
C
1/RG = 1/RGEN + 1/RGE
RG
RGEN = 25Ω
5V
DUT
RGEN = 50Ω
+
G
DUT
VCC
G
300V
-
10V
R
GE = 50Ω
E
E
FIGURE 17. USE TEST CIRCUIT
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
â
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STAR*POWER™
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CoolFET™
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FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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