HGTP20N60A4 [INTERSIL]
600V, SMPS Series N-Channel IGBTs; 600V ，开关电源系列N沟道IGBT的
| 型号： | HGTP20N60A4 |
| 厂家： | 
Intersil |
| 描述： | 600V, SMPS Series N-Channel IGBTs |
| 文件： | 总9页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTG20N60A4, HGTP20N60A4
Data Sheet
October 1999
File Number 4781.1
600V, SMPS Series N-Channel IGBTs
Features
The HGTG20N60A4 and HGTP20N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T = 125 C
J
o
on-state voltage drop varies only moderately between 25 C
o
• Low Conduction Loss
and 150 C.
• Temperature Compensating SABER™ Model
www.intersil.com
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Formerly Developmental Type TA49339.
Packaging
JEDEC TO-220AB ALTERNATE VERSION
Ordering Information
E
C
PART NUMBER
PACKAGE
TO-220AB
TO-247
BRAND
20N60A4
20N60A4
G
COLLECTOR
(FLANGE)
HGTP20N60A4
HGTG20N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
JEDEC STYLE TO-247
E
C
G
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
1
1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999
HGTG20N60A4, HGTP20N60A4
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTG20N60A4, HGTP20N60A4
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
70
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
40
280
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
100A at 600V
290
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.32
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
600
-
CES
ECS
C
C
GE
= 10mA, V
= 600V
= 0V
15
-
-
-
V
GE
o
I
V
T = 25 C
J
-
250
2.0
2.7
2.0
7.0
250
-
µA
mA
V
CES
CE
o
T = 125 C
J
-
-
-
o
Collector to Emitter Saturation Voltage
V
I
V
= 20A,
C
T = 25 C
J
1.8
1.6
5.5
-
CE(SAT)
= 15V
o
GE
T = 125 C
-
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
C CE
= 600V
4.5
-
V
GE(TH)
I
V
=
20V
o
nA
A
GES
GE
SSOA
T = 150 C, R = 3Ω, V
= 15V
100
-
J
G
GE
L = 100µH, V = 600V
CE
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 20A, V
= 300V
CE
-
-
-
-
-
-
-
-
-
-
8.6
142
182
15
-
V
GEP
C
C
Q
= 20A,
V
= 15V
162
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
g(ON)
GE
V
= 300V
CE
V
= 20V
o
210
GE
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
I
V
V
-
d(ON)I
J
= 20A
CE
t
12
-
rI
= 390V
=15V
CE
Current Turn-Off Delay Time
Current Fall Time
t
73
-
-
d(OFF)I
GE
R
= 3Ω
G
t
32
fI
L = 500µH
Test Circuit (Figure 20)
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
E
E
E
105
280
150
-
ON1
ON2
OFF
350
200
2
HGTG20N60A4, HGTP20N60A4
o
Electrical Specifications T = 25 C, Unless Otherwise Specified (Continued)
J
PARAMETER
Current Turn-On Delay Time
Current Rise Time
SYMBOL
TEST CONDITIONS
MIN
TYP
15
MAX
21
UNITS
ns
o
t
IGBT and Diode at T = 125 C
-
-
-
-
-
-
-
-
d(ON)I
J
I
V
V
R
= 20A
= 390V
= 15V
CE
t
13
18
ns
rI
CE
Current Turn-Off Delay Time
Current Fall Time
t
105
55
135
73
ns
d(OFF)I
GE
= 3Ω
G
t
ns
fI
L = 500µH
Test Circuit (Figure 20)
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
NOTES:
E
E
E
115
510
330
-
-
µJ
ON1
ON2
OFF
600
500
0.43
µJ
µJ
o
R
C/W
θJC
2. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON2
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 20.
Typical Performance Curves Unless Otherwise Specified
100
120
V
= 15V
o
GE
DIE CAPABILITY
T
= 150 C, R = 3Ω, V = 15V, L = 100µH
GE
J
G
80
60
40
20
0
100
80
60
40
20
0
PACKAGE LIMIT
25
50
75
100
125
150
0
100
V
CE
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
14
12
10
8
450
400
350
300
250
200
150
100
o
T
V
V
= 390V, R = 3Ω, T = 125 C
G J
C
o
GE
15V
CE
75 C
300
I
SC
f
f
P
= 0.05 / (t
d(OFF)I
+ t
)
6
MAX1
d(ON)I
+ E )
OFF
= (P - P ) / (E
100
40
MAX2
D
C
ON2
= CONDUCTION DISSIPATION
4
C
J
t
SC
(DUTY FACTOR = 50%)
o
R
= 0.43 C/W, SEE NOTES
o
ØJC
2
T
= 125 C, R = 3Ω, L = 500µH, V
= 390V
G
CE
20
0
10
11
12
13
14
15
5
10
30
40
50
V
, GATE TO EMITTER VOLTAGE (V)
I
, COLLECTOR TO EMITTER CURRENT (A)
GE
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
HGTG20N60A4, HGTP20N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
100
80
100
80
60
40
20
0
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 12V
GE
DUTY CYCLE < 0.5%, V
= 15V
PULSE DURATION = 250µs
GE
60
40
20
0
o
o
T
= 125 C
T
= 125 C
J
J
o
o
o
o
T
= 150 C
T = 25 C
J
T
= 25 C
J
T
= 150 C
J
J
0
0
0.4
V
0.8
1.2
1.6
2.0
2.4
2.8
0.4
V
0.8
1.2
1.6
2.0
2.4
2.8
3.2
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
800
R
= 3Ω, L = 500µH, V
= 390V
CE
G
R
= 3Ω, L = 500µH, V
= 390V
G
CE
700
600
500
400
300
200
100
0
1200
1000
800
600
400
200
0
o
T
= 125 C, V
= 12V, V = 15V
GE
J
GE
o
T
= 125 C, V
= 12V OR 15V
J
GE
o
T
= 25 C, V
= 12V OR 15V
35 40
J
GE
30
o
T
= 25 C, V
= 12V, V
30
= 15V
J
GE
GE
5
10
I
15
20
25
5
10
15
20
25
35
40
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
22
36
R
= 3Ω, L = 500µH, V
= 390V
R
= 3Ω, L = 500µH, V = 390V
CE
G
CE
G
32
28
24
20
16
12
8
20
18
16
14
12
10
8
o
o
T
= 25 C, T = 125 C, V
= 12V
GE
J
J
o
o
T
= 25 C, T = 125 C, V
= 12V
GE
J
J
o
o
T
= 25 C, T = 125 C, V
= 15V
35
J
J
GE
o
o
T
= 25 C OR T = 125 C, V
= 15V
J
J
GE
4
5
10
15
20
25
30
40
5
10
15
20
25
30
35
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
4
HGTG20N60A4, HGTP20N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
120
110
80
72
64
56
48
40
32
24
16
R
= 3Ω, L = 500µH,
R
= 3Ω, L = 500µH, V
= 390V
V
= 390V
G
G
CE
CE
o
V
= 12V, V
GE
= 15V, T = 125 C
J
o
GE
T
= 125 C, V
= 12V OR 15V
J
GE
100
90
80
70
60
o
= 25 C, V
T
= 12V OR 15V
GE
J
o
V
= 12V, V
GE
= 15V, T = 25 C
GE
J
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
240
o
I
= 1mA, R = 15Ω, T = 25 C
G(REF)
L
J
DUTY CYCLE < 0.5%, V
= 10V
CE
PULSE DURATION = 250µs
14
12
10
8
200
V
= 600V
CE
V
= 400V
CE
160
120
80
40
0
o
T
= 25 C
J
V
= 200V
CE
6
o
T
= 125 C
J
4
o
T
= -55 C
J
2
0
6
7
8
9
10
11
12
0
20
40
60
80
100
120
140
160
V
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
o
T
E
= 125 C, L = 500µH, V
= 390V, V = 15V
GE
R
= 3Ω, L = 500µH, V
= 390V, V = 15V
GE
J
CE
G
CE
+ E
ON2 OFF
= E
+ E
OFF
E
= E
TOTAL
ON2
TOTAL
10
I
= 30A
CE
I
= 30A
CE
1
I
I
= 20A
= 10A
CE
I
I
= 20A
= 10A
CE
CE
CE
0.1
10
100
, GATE RESISTANCE (Ω)
1000
3
25
50
75
100
125
150
R
o
G
T
, CASE TEMPERATURE ( C)
C
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
5
HGTG20N60A4, HGTP20N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
5
4
3
2
1
0
2.2
2.1
2.0
1.9
1.8
1.7
o
DUTY CYCLE < 0.5%, T = 25 C
J
PULSE DURATION = 250µs,
FREQUENCY = 1MHz
C
I
= 30A
= 20A
IES
CE
I
I
CE
CE
C
OES
= 10A
C
RES
0
20
40
60
80
100
8
9
10
11
12
13
14
15
16
V
, GATE TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
GE
CE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
0
10
0.5
0.2
0.1
-1
10
10
t
1
0.05
P
D
0.02
0.01
t
2
DUTY FACTOR, D = t / t
PEAK T = (P X Z
1
2
X R
-2
) + T
J
D
θJC
θJC C
SINGLE PULSE
-5
-4
-3
-2
10
-1
10
0
10
10
10
t , RECTANGULAR PULSE DURATION (s)
10
1
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG20N60A4D
DIODE TA49372
90%
OFF
10%
V
GE
E
ON2
L = 500µH
E
V
CE
R
= 3Ω
G
90%
DUT
+
10%
d(OFF)I
I
CE
V
= 390V
t
t
DD
rI
-
t
fI
t
d(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
6
HGTG20N60A4, HGTP20N60A4
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t
are defined in Figure 21.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
.
JM
+ E
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
f
is defined by f
MAX2
= (P - P )/(E
OFF
). The
ON2
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
The sum of device switching and conduction losses must not
exceed P . A 50% duty factor was used (Figure 3) and the
3. Tips of soldering irons should be grounded.
D
4. Devices should never be inserted into or removed from
circuits with power on.
conduction losses (P ) are approximated by
C
P = (V x I )/2.
C
CE CE
5. Gate Voltage Rating - Never exceed the gate-voltage
E
and E are defined in the switching waveforms
OFF
rating of V
. Exceeding the rated V can result in
ON2
GEM
GE
permanent damage to the oxide layer in the gate region.
shown in Figure 21. E
is the integral of the
ON2
instantaneous power loss (I
x V ) during turn-on and
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
CE
CE
E
is the integral of the instantaneous power loss
OFF
(I
x V ) during turn-off. All tail losses are included in the
CE
CE
calculation for E
; i.e., the collector current equals zero
OFF
(I
= 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
7
HGTG20N60A4, HGTP20N60A4
TO-220AB (Alternate Version)
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
A
INCHES
MILLIMETERS
E
ØP
A
1
SYMBOL
MIN
MAX
0.180
0.052
0.034
0.055
0.022
0.610
0.405
MIN
4.32
MAX
4.57
NOTES
Q
A
0.170
0.048
0.030
0.045
0.018
0.590
0.395
-
H
1
A
1.22
1.32
2, 4
1
TERM. 4
b
0.77
0.86
2, 4
D
b
1.15
1.39
2, 4
1
c
0.46
0.55
2, 4
D
E
e
14.99
10.04
15.49
10.28
-
-
L
1
b1
b
c
0.100 TYP
0.200 BSC
0.235
2.54 TYP
5.08 BSC
5
5
-
L
e
1
o
60
H
0.255
0.105
0.550
0.130
0.153
0.115
5.97
6.47
2.66
13.97
3.30
3.88
2.92
1
1
2
3
J
0.095
0.530
0.110
0.149
0.105
2.42
13.47
2.80
6
-
J
1
1
e
L
e1
L
3
-
1
ØP
Q
3.79
2.66
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Dimension (without solder).
3. Solder finish uncontrolled in this area.
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 3 dated 7-97.
8
HGTG20N60A4, HGTP20N60A4
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
A
INCHES
MIN
MILLIMETERS
TERM. 4
ØP
E
SYMBOL
MAX
0.190
0.051
0.070
0.105
0.026
0.820
0.625
MIN
4.58
MAX
4.82
NOTES
ØS
A
b
0.180
0.046
0.060
0.095
0.020
0.800
0.605
-
Q
1.17
1.29
2, 3
ØR
b
b
1.53
1.77
1, 2
1
2
D
2.42
2.66
1, 2
c
0.51
0.66
1, 2, 3
D
E
e
20.32
15.37
20.82
15.87
-
-
L
1
b1
b2
0.219 TYP
0.438 BSC
0.090
5.56 TYP
11.12 BSC
4
4
5
-
L
c
e
1
b
J
0.105
0.640
0.155
0.144
0.220
0.205
0.270
2.29
2.66
16.25
3.93
3.65
5.58
5.20
6.85
1
L
0.620
0.145
0.138
0.210
0.195
0.260
15.75
3.69
3.51
5.34
4.96
6.61
1
2
3
3
2
1
J
e
1
L
1
-
BACK VIEW
1
ØP
Q
e1
-
ØR
-
ØS
-
NOTES:
1. Lead dimension and finish uncontrolled in L .
1
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
EUROPE
ASIA
Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
9
相关型号：
HGTP20N60A4_NL
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-220AB ALTERNATE VERSION, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明