HGTP20N60C3 [FAIRCHILD]
45A, 600V, UFS Series N-Channel IGBT; 45A ， 600V ， UFS系列N沟道IGBT
| 型号： | HGTP20N60C3 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 45A, 600V, UFS Series N-Channel IGBT |
| 文件： | 总8页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTG20N60C3, HGTP20N60C3,
HGT1S20N60C3S
Data Sheet
December 2001
45A, 600V, UFS Series N-Channel IGBT
Features
o
This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
• 45A, 600V, T = 25 C
C
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
o
o
moderately between 25 C and 150 C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
Formerly developmental type TA49178.
JEDEC STYLE TO-247
E
C
G
Ordering Information
PART NUMBER
PACKAGE
BRAND
G20N60C3
HGTG20N60C3
TO-247
HGTP20N60C3
TO-220AB
TO-263AB
G20N60C3
G20N60C3
COLLECTOR
(FLANGE)
HGT1S20N60C3S
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.
JEDEC TO-220AB (ALTERNATE VERSION)
Symbol
C
E
C
G
G
COLLECTOR
(FLANGE)
E
JEDEC TO-263AB
COLLECTOR
G
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
45
20
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
300
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
20A at 600V
164
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/ C
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
100
mJ
ARV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
4
µs
µs
GE
GE
SC
SC
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
10
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = 125 C, R = 10Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
600
15
-
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
= 0V
-
28
-
CES
ECS
C
GE
= 10mA, V
-
V
C
GE
o
I
V
= BV
CES
T
= 25 C
250
5.0
1.8
1.9
6.3
±250
-
µA
mA
V
CES
CE
C
C
C
C
o
T
T
T
= 150 C
-
-
o
Collector to Emitter Saturation Voltage
V
I
= I
= 25 C
-
1.4
1.5
4.8
-
CE(SAT)
C
C110
= 15V
V
o
GE
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= V
GE
3.4
-
V
GE(TH)
C CE
I
V
= ±20V
nA
A
GES
SSOA
GE
o
T = 150 C, R
= 15V,
L = 100µH
=
V
V
= 480V
= 600V
120
20
-
J
G
CE
10Ω, V
GE
-
-
A
CE
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
= I
, V
= 0.5 BV
-
-
-
-
-
-
-
-
-
-
8.4
91
-
V
GEP
CE
CE
C110 CE
CES
Q
I
V
= I
V
V
= 15V
110
145
32
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
G(ON)
C110
GE
= 0.5 BV
CE
CES
= 20V
o
122
28
GE
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
J
d(ON)I
I
= I
CE
C110
t
24
28
rI
d(OFF)I
V
V
R
= 0.8 BV
= 15V
CE
GE
CES
Current Turn-Off Delay Time
Current Fall Time
t
151
55
210
98
= 10Ω
t
G
fI
L = 1mH
Test Circuit (Figure 17)
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
E
E
E
295
500
500
320
550
700
ON1
ON2
OFF
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
o
Electrical Specifications
PARAMETER
T
= 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
28
MAX
32
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 150 C
-
-
-
-
-
-
-
-
d(ON)I
J
I
= I
CE
C110
t
24
28
ns
rI
V
V
= 0.8 BV
= 15V
CE
GE
CES
Current Turn-Off Delay Time
Current Fall Time
t
280
108
380
1.0
1.2
-
450
210
410
1.1
ns
d(OFF)I
R
= 10Ω
t
G
ns
fI
L = 1mH
Test Circuit (Figure 17)
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
E
E
E
µJ
ON1
ON2
OFF
mJ
mJ
1.7
o
Thermal Resistance Junction To Case
NOTES:
R
0.76
C/W
θJC
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E is the
ON2
ON1
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in Figure 17.
J
Typical Performance Curves Unless Otherwise Specified
50
40
30
20
10
0
140
120
100
80
V
= 15V
o
GE
T
= 150 C, R = 10Ω, V = 15V, L = 100µH
GE
J
G
60
40
20
0
0
100
200
300
400
500
600
700
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
o
14
12
10
8
450
400
350
300
250
200
150
T
= 150 C, R = 10Ω,
J
G
o
V
= 360V, R = 10Ω, T = 125 C
G J
L = 1mH, V
= 480V
CE
CE
100
10
1
T
V
C
GE
I
SC
o
75 C 15V
o
75 C
10V
15V
10V
o
110 C
o
110 C
f
f
= 0.05 / (t
+ t
)
MAX1
d(OFF)I
d(ON)I
6
= (P - P ) / (E
+ E
)
MAX2
D
C
ON2
OFF
P
= CONDUCTION DISSIPATION
C
4
(DUTY FACTOR = 50%)
o
t
SC
R
= 0.76 C/W, SEE NOTES
ØJC
2
2
5
10
20
40
10
11
V , GATE TO EMITTER VOLTAGE (V)
GE
12
13
14
15
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Typical Performance Curves Unless Otherwise Specified (Continued)
100
80
60
40
20
0
300
250
200
150
100
50
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
= 15V
GE
o
T
= 25 C
C
o
o
T
= -55 C
T
o
= 25 C
C
C
T
= 150 C
C
o
T
= -55 C
C
o
T
= 150 C
C
DUTY CYCLE <0.5%, V = 10V
PULSE DURATION = 250µs
GE
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
4.0
3.0
R
= 10Ω, L = 1mH, V
= 480V
o
G
CE
R
= 10Ω, L = 1mH, V
= 480V
G
CE
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
1.0
0.5
0
o
T
= 25 C, T = 150 C, V
= 10V
J
J
GE
o
T
= 150 C; V
= 10V OR 15V
J
GE
o
T
= 25 C; V
GE
= 10V OR 15V
35 40
J
o
o
T
= 25 C, T = 150 C, V
= 15V
J
J
GE
35
5
10
15
20
25
30
40
5
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
50
R
= 10Ω, L = 1mH, V = 480V
CE
G
R
= 10Ω, L = 1mH, V = 480V
CE
G
175
150
125
100
75
45
40
35
30
25
20
o
o
T
= 25 C, T = 150 C, V = 10V
GE
J
J
o
o
T
= 25 C, T = 150 C, V = 10V
GE
J
J
50
25
o
o
o
o
T
= 25 C, T = 150 C, V
GE
= 15V
40
T
= 25 C AND T = 150 C, V = 15V
J
J
J
J
GE
0
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Typical Performance Curves Unless Otherwise Specified (Continued)
120
110
100
90
300
275
250
225
200
175
150
125
100
R
= 10Ω, L = 1mH, V
= 480V
R
= 10Ω, L = 1mH, V = 480V
CE
G
CE
G
o
T
= 150 C, V
= 10V OR V = 15V
GE
J
GE
o
T
= 150 C, V
= 10V, V
GE
= 15V
= 15V
J
GE
80
o
T
= 25 C, V
= 10V, V
GE
J
GE
70
o
= 25 C, V
T
= 10V OR 15V
J
GE
60
50
40
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
300
o
I
= 1mA, R = 15Ω, T = 25 C
DUTY CYCLE <0.5%, V
= 10V
G (REF)
L
C
CE
PULSE DURATION = 250µs
14
12
10
8
250
200
150
100
50
o
T
= -55 C
C
V
= 600V
CE
o
T
= 150 C
C
V
= 200V
CE
6
V
= 400V
CE
o
4
T
= 25 C
C
2
0
0
5
6
7
8
9
10
11
12
13
14
15
0
10
20
30
40
50
60
70
80
90 100
V
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
g
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5
FREQUENCY = 1MHz
C
IES
4
3
2
1
0
C
OES
C
RES
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Typical Performance Curves Unless Otherwise Specified (Continued)
0
10
0.5
0.2
0.1
-1
-2
-3
10
10
10
0.05
0.02
0.01
t
1
SINGLE PULSE
P
D
DUTY FACTOR, D = t / t
1
2
t
PEAK T = (P X Z
X R ) + T
2
J
D
θJC
θJC C
-5
-4
10
-3
-2
10
-1
0
1
10
10
t , RECTANGULAR PULSE DURATION (s)
10
10
10
1
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP3060
90%
OFF
10%
ON2
V
GE
E
E
L = 1mH
V
CE
R
= 10Ω
G
90%
10%
d(OFF)I
+
-
I
CE
t
t
V
= 480V
rI
DD
t
fI
t
d(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 18. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t
MAX1
+ t ).
d(OFF)I d(ON)I
MAX1
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t are defined in Figure 18.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. Gate Voltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
CE
x I )/2.
CE
C
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
ON2
shown in Figure 18. E
ON2
instantaneous power loss (I
E
is the integral of the
x V ) during turn-on and
CE
CE
is the integral of the instantaneous power loss
OFF
(I
x V ) during turn-off. All tail losses are included in
CE
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
the calculation for E
; i.e., the collector current equals
OFF
zero (I
= 0).
CE
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
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Rev. H4
相关型号：
HGTP2N120CN_NL
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
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