HUF76629D3ST_F085 [FAIRCHILD]
Power Field-Effect Transistor, 20A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3/2;
| 型号： | HUF76629D3ST_F085 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 20A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3/2 开关 晶体管 |
| 文件： | 总6页 (文件大小：372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
HUF76629D3ST_F085
®
N-Channel Logic Level UltraFET Power MOSFET
100V, 20A, 52mΩ
D
Features
Typ r
= 41mΩ at V = 10V, I = 20A
GS D
DS(on)
Typ Q
= 39nC at V = 10V, I = 20A
GS D
g(tot)
G
UIS Capability
RoHS Compliant
Qualified to AEC Q101
S
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
100
V
V
VGS
±16
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
TC = 25°C
20
ID
A
See Figure4
EAS
PD
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
231
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate above 25oC
150
1
TJ, TSTG Operating and Storage Temperature
-55 to + 175
RθJC
RθJA
Thermal Resistance Junction to Case
1
Maximum Thermal Resistance Junction to Ambient
52
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
2500 units
HUF76629D3ST HUF76629D3ST_F085 D-PAK(TO-252)
13”
Notes:
1: Current is limited by bondwire configuration.
2: Starting T = 25°C, L = 1.8mH, I = 16A, V = 100V during inductor charging and V = 0V during time in avalanche
J
AS
DD
DD
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating
2
presented here is based on mounting on a 1 in pad of 2oz copper.
©2013 Fairchild Semiconductor Corporation
HUF76629D3ST_F085 Rev. C1
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
100
-
-
-
-
-
1
V
V
DS=100V, TJ = 25oC
-
-
-
μA
mA
nA
VGS = 0V
TJ = 175oC(Note 4)
1
IGSS
VGS = ±16V
±100
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
1.0
1.6
41
3.0
52
V
TJ = 25oC
-
-
mΩ
mΩ
mΩ
mΩ
ID = 20A,
TJ = 175oC(Note 4)
TJ = 25oC
102
47
128
55
V
GS= 10V
ID = 20A,
GS= 4.5V
rDS(on)
Drain to Source On Resistance
TJ = 175oC(Note 4)
115
135
V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1280
214
33
-
-
pF
pF
pF
Ω
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Rg
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
2.5
39
-
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge
VGS = 0 to 10V
V
43
3
-
nC
nC
nC
nC
DD = 50V
D = 20A
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to 2V
2.3
3.5
11
I
Qgd
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
7
27
-
ns
ns
ns
ns
ns
ns
12
38
5
-
V
V
DD = 50V, ID = 20A,
GS = 10V, RGEN = 8.2Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
-
47
Drain-Source Diode Characteristics
I
SD = 20A, VGS = 0V
-
-
-
-
-
-
1.25
1.0
V
VSD
Source to Drain Diode Voltage
ISD = 10A, VGS = 0V
V
Trr
Reverse Recovery Time
77
221
99
ns
nC
IF = 20A, dISD/dt = 100A/μs,
V
DD=80V
Qrr
Reverse Recovery Charge
305
Notes:
4: The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
HUF76629D3ST_F085 Rev. C1
2
www.fairchildsemi.com
Typical Characteristics
25
20
15
10
5
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
VGS = 4.5V
0
25
50
T
75
100
125
150
175
0
25
50
75
100
125
150
175
, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
C
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
HUF76629D3ST_F085 Rev. C1
3
www.fairchildsemi.com
Typical Characteristics
100
10
1
If R = 0
= (L)(I )/(1.3*RATED BV
100
10
t
- V
)
AV
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
1ms
STARTING TJ = 25oC
STARTING TJ = 150oC
1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
T
= MAX RATED
o
J
100ms
= 25
C
C
0.1
0.001
0.01
0.1
1
10
100
1
10
100
300
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
50
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
40
30
20
10
0
VDD = 5V
10
TJ = 175 o
C
TJ = 25 o
C
TJ = 175oC
TJ = 25oC
1
TJ = -55oC
0.1
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
80
50
40
60
40
20
0
30
VGS
10V Top
8V
6V
5V
4.5V
4V Bottom
VGS
10V Top
8V
6V
5V
4.5V
4V Bottom
20
10
80μs PULSE WIDTH
Tj=25oC
80μs PULSE WIDTH
Tj=175oC
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
HUF76629D3ST_F085 Rev. C1
4
www.fairchildsemi.com
Typical Characteristics
200
3.0
2.4
1.8
1.2
0.6
0.0
ID = 20A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
150
100
50
TJ = 175oC
ID = 20A
TJ = 25oC
VGS = 10V
0
0
2
4
6
8
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
Figure 12. Normalized Rdson vs Junction
Temperature
1.4
1.2
VGS = VDS
ID = 1mA
I
= 250μA
D
1.2
1.0
0.8
0.6
0.4
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
ID = 20A
8
Ciss
VDD = 40V
1000
6
VDD = 50V
VDD = 60V
Coss
4
2
0
100
Crss
f = 1MHz
VGS = 0V
10
0.1
1
10
100
0
10
20
30
40
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
Figure 16. Gate Charge vs Gate to Source
Voltage
HUF76629D3ST_F085 Rev. C1
5
www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
HUF76629D3ST_F085 Rev. C1
6
www.fairchildsemi.com
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