IRFP250B [FAIRCHILD]

200V N-Channel MOSFET; 200V N沟道MOSFET
IRFP250B
元器件型号: IRFP250B
生产厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述和应用:

200V N-Channel MOSFET
200V N沟道MOSFET

PDF文件: 总8页 (文件大小:670K)
下载文档:  下载PDF数据表文档文件
型号参数:IRFP250B参数

IRFP250MPBF

HEXFET® Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
211 IRF

IRFP250N

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
3355 IRF

IRFP250NPBF

HEXFET㈢ Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
599 IRF

IRFP250PBF

HEXFET㈢ Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
106 IRF

IRFP250PBF

Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
56 VISHAY

IRFP250R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
138 ETC

IRFP251

N-Channel(Hexfet Transistors)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
95 IRF

IRFP251

N-Channel Power Mosfets

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
71 SAMSUNG

IRFP251

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
61 IXYS

IRFP251R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
23 ETC

IRFP252

N-Channel(Hexfet Transistors)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
51 IRF

IRFP252

N-Channel Power Mosfets

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
34 SAMSUNG

IRFP252

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
26 IXYS

IRFP252

Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 SAMSUNG

IRFP252R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-247

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
21 ETC