KSC2333YTU [FAIRCHILD]
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN;
| 型号： | KSC2333YTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 晶体 开关 晶体管 功率双极晶体管 局域网 |
| 文件： | 总5页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC2333
High Speed Switching Application
•
•
Low Collector Saturation Voltage
Specified of Reverse Biased SOA With Inductive Load
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
500
V
V
CBO
CEO
EBO
400
7
V
I
2
A
C
I
I
4
A
CP
B
1
15
A
P
Collector Dissipation (T =25°C)
W
°C
°C
C
C
T
T
Junction Temperature
150
J
Storage Temperature
- 55 ~ 150
STG
*PW≤350µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
400
450
Max.
Units
V
(sus)
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
I
I
= 0.5A, I =0.1A, L = 1mH
V
V
CEO
C
C
B
V
(sus)1
= 0.5A, I = -I = 0.1A
B1 B2
CEX
T
= 125°C, L = 180µH, clamped
C
V
(sus)2
Collector-Emitter Sustaining Voltage
I
= 1A, I = 0.2A, -I =0.2A
400
V
CEX
C
B1
B2
T = 125°C, L = 180µH, clamped
C
I
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
V
V
V
V
= 400V, I = 0
10
1
µA
mA
µA
CBO
CB
CE
CE
CE
E
I
I
I
= 400V, R =51Ω, T = 125°C
BE C
CER
= 400V, V (off) = -5V
10
1
CEX1
CEX2
BE
= 400V, V (off) = -5V @
mA
BE
T
= 125°C
C
I
Emitter Cut-off Current
* DC Current Gain
V
= 5V, I = 0
10
80
µA
EBO
EB
C
h
h
V
V
= 5V, I = 0.1A
20
10
FE1
FE2
CE
CE
C
= 5V, I = 0.5A
C
V
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 0.5A, I = 0.1A
1
1.2
1
V
V
CE
C
C
B
= 0.5A, I = 0.1A
BE
B
t
t
t
V
I
= 150V, I = 0.5A
µs
µs
µs
ON
CC
C
= - I = 0.1A
Storage Time
B1
B2
2.5
1
STG
F
R = 300Ω
L
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed
h
Classification
FE
Classification
R
O
Y
h
20 ~ 40
30 ~ 60
40 ~ 80
FE1
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
1.0
1000
100
10
VCE = 5V
Pulsed
IB = 90mA
IB = 80mA
IB = 100mA
0.8
IB = 70mA
IB = 60mA
IB = 50mA
IB = 40mA
0.6
0.4
0.2
0.0
IB = 30mA
IB = 20mA
IB = 10mA
1
0
1
2
3
4
5
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
IC= 5IB1 = -5IB2
Pulsed
IC/IB = 5
Pulsed
tstg
1
1
VBE(sat)
tf
ton
0.1
0.1
VCE(sat)
0.01
0.01
10
100
1000
1
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Turn On, Storage and Fall Time
vs Collector Current
10000
1000
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1
10
100
1000
0
50
100
150
200
250
300
350
400
450
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE(V), COLLECTOR-EMITTER VOLTAGE
Figure 5. Forward Bias Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical characteristics (Continued)
160
140
120
100
20.0
17.5
15.0
12.5
10.0
7.5
80
S/b Limited
60
Dissipation Limited
40
20
0
5.0
2.5
0.0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
TC[oC], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
Figure 8. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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