NDB6030 [FAIRCHILD]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管型号: | NDB6030 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总4页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
July 1997
NDP6030 / NDB6030
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance and
provide superior switching performance. These devices are
particularly suited for low voltage applications such as DC/DC
converters and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter
NDP6030
NDB6030
Units
V
VDSS
VDGR
Drain-Source Voltage
30
30
V
Drain-Gate Voltage (RGS < 1 MW)
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
±20
46
V
A
VGSS
ID
135
75
W
W/°C
°C
PD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
0.5
TJ,TSTG
-65 to 175
THERMAL CHARACTERISTICS
RqJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2
°C/W
°C/W
Rq JA
62.5
© 1997 Fairchild Semiconductor Corporation
NDP6030.RevB
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note)
WDSS
IAR
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
VDD = 15 V, ID = 46 A
100
46
mJ
A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
30
V
ID = 250 µA, Referenced to 25 o C
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
30
DBVDSS/DTJ
IDSS
10
1
µA
mA
nA
nA
VDS = 24 V, VGS = 0 V
TJ = 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
100
-100
IGSSF
IGSSR
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (Note)
ID = 250 µA, Referenced to 25 o C
mV/oC
V
Gate Threshold VoltageTemp. Coefficient
-6
DVGS(th)/DTJ
Gate Threshold Voltage
2
2.3
1.7
4
VGS(th)
VDS = VGS, ID = 250 µA
TJ = 125°C
1.4
2.8
Static Drain-Source On-Resistance
0.014 0.018
0.019 0.032
RDS(ON)
VGS = 10 V, ID = 23 A
TJ = 125°C
W
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS= 10 V
VDS = 10 V, ID = 23 A
60
A
S
Forward Transconductance
22
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
1165
915
pF
pF
pF
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
385
SWITCHING CHARACTERISTICS (Note)
Turn - On Delay Time
Turn - On Rise Time
9
18
nS
nS
tD(on)
VDD = 30 V, ID = 46 A,
VGS = 10 V, RGEN = 11 W
103
200
tr
Turn - Off Delay Time
Turn - Off Fall Time
40
98
80
nS
nS
tD(off)
200
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
34
7
47
nC
nC
nC
Qg
Qgs
Qgd
VDS =15 V,
ID = 46 A, VGS = 10 V
13
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 23 A (Note)
46
135
1.3
A
A
V
ISM
VSD
0.9
Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6030.RevB
Typical Electrical Characteristics
2
1.8
1.6
1.4
1.2
1
100
V
= 20V
12
GS
V
= 5.0V
10
GS
8.0
80
60
40
20
0
7.0
6.0
6.0
7.0
8.0
10
5.0
12
80
20
0.8
0.6
4.0
0
20
40
60
100
0
1
2
3
4
5
I
, DRAIN CURRENT (A)
D
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.08
1.75
ID = 23A
I
= 23A
D
V
= 10V
GS
1.5
1.25
1
0.06
0.04
0.02
0
125°C
25°C
6
0.75
0.5
-50
-25
0
25
50
75
100
125
150
175
4
5
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
Figure 3. On-Resistance Variation
with Temperature.
60
50
40
30
20
10
0
60
V = 0V
GS
VDS = 10V
T
= -55°C
A
25°C
10
1
125°C
T
= 125°C
A
25°C
0.1
-55°C
0.01
0.001
0.0001
1
2
3
4
5
6
7
0
0.2
0.4
V , BODY DIODE FORWARD VOLTAGE (V)
SD
0.6
0.8
1
1.2
1.4
1.6
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 5. Transfer Characteristics.
NDP6030.RevB
Typical Electrical Characteristics (continued)
4000
2000
1000
500
15
VDS = 10V
ID = 46A
15V
12
9
20V
C
iss
C
oss
6
C
rss
f = 1 MHz
V
= 0V
GS
3
200
0.1
0.3
1
3
10
30
0
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
0
10
20
30
40
50
Q
, GATE CHARGE (nC)
g
Figure 8.Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
1000
300
200
100
50
SINGLE PULSE
RqJC =2.0° C/W
TA = 25°C
800
600
400
200
0
20
10
5
VGS = 10V
SINGLE PULSE
2
1
o
RqJC = 2 C/W
TC = 25 °C
0.01
0.1
1
10
100
1,000
0.5
0.5
1
3
5
10
20
30
50
SINGLE PULSE TIME (ms)
V
, DRAIN-SOURCE VOLTAGE (V))
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
0.3
0.2
0.2
R
q
(t) = r(t) * R
JC
q
JC
R
= 2.0 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
t
1
t
2
0.03
0.01
T - T = P * R
(t)
JC
q
J
C
0.02
Duty Cycle, D = t /t
1
2
Single Pulse
0.01
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
t
,TIME (ms)
1
Figure 11. Transient Thermal Response Curve.
NDP6030.RevB
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