NZT753 [FAIRCHILD]
PNP Current Driver Transistor; PNP电流驱动器晶体管型号: | NZT753 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | PNP Current Driver Transistor |
文件: | 总3页 (文件大小:41K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NZT753
PNP Current Driver Transistor
4
•
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P.
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
A
Symbol
Parameter
Value
- 100
Units
V
V
V
V
Collector-Emitter Voltage
CEO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- 120
V
CBO
EBO
- 5.0
V
I
- Continuous
- 4.0
A
C
T , T
Operating and Storage Junction Temperature Range
- 55 ~ +150
°C
J
STG
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Off Characteristics
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
I
= -10mA, I = 0
-100
-120
-5.0
V
V
V
CEO
CBO
EBO
C
B
I
I
= -100µA, I = 0
E
C
E
= -100µA, I = 0
C
I
V
T
= -100V, I = 0
-0.1
-10
µA
µA
CBO
CB
E
= 100°C
A
I
Emitter-Base Cutoff Current
V
= -4V, I = 0
-0.1
µA
EBO
EB
C
On Characteristics *
h
DC Current Gain
V
V
V
= -2.0V, I = -50mA
70
100
55
FE
CE
CE
CE
C
= -2.0V, I = -500mA
300
C
= -2.0V, I = -1.0A
C
V
V
V
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
= -1.0A, I = -50mA
-0.3
-1.25
-1.0
V
V
V
CE
C
C
C
(sat)
(on)
= -1.0A, I = -100mA
B
BE
V
= -2.0V, I = -1.0A,
C
BE
CE
Small Signal Characteristics
Transition Frequency
f
V
= -5V, I = -100mA, f = 100MHz
75
MHz
T
CE
C
*Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics * T =25°C unless otherwise noted
A
Symbol
Parameter
Max.
Units
P
Total Device Dissipation
Derate above 25C
1.2
9.7
W
mW/°C
D
R
Thermal Resistance, Junction to Ambient
103
°C/W
θJA
2
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min 6cm .
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
Package Dimensions
SOT-223
3.00 ±0.10
MAX1.80
+0.04
–0.02
0.06
2.30 TYP
4.60 ±0.25
0.70 ±0.10
°
~10
°
0
+0.10
–0.05
(0.95)
(0.95)
0.25
6.50 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
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E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
QT Optoelectronics™ TinyLogic®
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2
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