NZT753 [FAIRCHILD]

PNP Current Driver Transistor; PNP电流驱动器晶体管
NZT753
型号: NZT753
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

PNP Current Driver Transistor
PNP电流驱动器晶体管

晶体 驱动器 晶体管
文件: 总3页 (文件大小:41K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NZT753  
PNP Current Driver Transistor  
4
This device is designed for power amplifier, regulator and switching  
circuits where speed is important. Sourced from Process 5P.  
3
2
1
SOT-223  
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
- 100  
Units  
V
V
V
V
Collector-Emitter Voltage  
CEO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
- 120  
V
CBO  
EBO  
- 5.0  
V
I
- Continuous  
- 4.0  
A
C
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ +150  
°C  
J
STG  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Conditions  
Min.  
Max.  
Units  
Off Characteristics  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
I
= -10mA, I = 0  
-100  
-120  
-5.0  
V
V
V
CEO  
CBO  
EBO  
C
B
I
I
= -100µA, I = 0  
E
C
E
= -100µA, I = 0  
C
I
V
T
= -100V, I = 0  
-0.1  
-10  
µA  
µA  
CBO  
CB  
E
= 100°C  
A
I
Emitter-Base Cutoff Current  
V
= -4V, I = 0  
-0.1  
µA  
EBO  
EB  
C
On Characteristics *  
h
DC Current Gain  
V
V
V
= -2.0V, I = -50mA  
70  
100  
55  
FE  
CE  
CE  
CE  
C
= -2.0V, I = -500mA  
300  
C
= -2.0V, I = -1.0A  
C
V
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= -1.0A, I = -50mA  
-0.3  
-1.25  
-1.0  
V
V
V
CE  
C
C
C
(sat)  
(on)  
= -1.0A, I = -100mA  
B
BE  
V
= -2.0V, I = -1.0A,  
C
BE  
CE  
Small Signal Characteristics  
Transition Frequency  
f
V
= -5V, I = -100mA, f = 100MHz  
75  
MHz  
T
CE  
C
*Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%  
Thermal Characteristics * T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25C  
1.2  
9.7  
W
mW/°C  
D
R
Thermal Resistance, Junction to Ambient  
103  
°C/W  
θJA  
2
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min 6cm .  
©2003 Fairchild Semiconductor Corporation  
Rev. A, April 2003  
Package Dimensions  
SOT-223  
3.00 ±0.10  
MAX1.80  
+0.04  
–0.02  
0.06  
2.30 TYP  
4.60 ±0.25  
0.70 ±0.10  
°
~10  
°
0
+0.10  
–0.05  
(0.95)  
(0.95)  
0.25  
6.50 ±0.20  
Dimensions in Millimeters  
©2003 Fairchild Semiconductor Corporation  
Rev. A, April 2003  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FACT™  
ImpliedDisconnect™ PACMAN™  
SPM™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™ FRFET™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
Across the board. Around the world.™  
The Power Franchise™  
FACT Quiet series™ ISOPLANAR™  
POP™  
Stealth™  
FAST®  
LittleFET™  
MicroFET™  
MicroPak™  
Power247™  
PowerTrench®  
QFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
FASTr™  
GlobalOptoisolator™ MICROWIRE™  
QS™  
GTO™  
HiSeC™  
I2C™  
MSX™  
MSXPro™  
OCX™  
QT Optoelectronics™ TinyLogic®  
Quiet Series™  
TruTranslation™  
RapidConfigure™  
RapidConnect™  
UHC™  
OCXPro™  
OPTOLOGIC®  
OPTOPLANAR™  
UltraFET®  
SILENT SWITCHER® VCX™  
SMART START™  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2003 Fairchild Semiconductor Corporation  
Rev. I2  

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