PZT3904_NL [FAIRCHILD]
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-223, 3 PIN;
| 型号： | PZT3904_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-223, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3904
MMBT3904
PZT3904
C
C
E
E
C
TO-92
C
B
B
SOT-23
Mark: 1A
B
E
SOT-223
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
60
V
V
Collector-Base Voltage
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3904
*MMBT3904
**PZT3904
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
1,000
8.0
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
2001 Fairchild Semiconductor Corporation
2N3904/MMBT3904/PZT3904, Rev A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0
40
V
Voltage
V(BR)CBO
V(BR)EBO
IBL
Collector-Base Breakdown Voltage
60
V
V
IC = 10 µA, IE = 0
Emitter-Base Breakdown Voltage
Base Cutoff Current
6.0
IE = 10 µA, IC = 0
VCE = 30 V, VEB = 3V
VCE = 30 V, VEB = 3V
50
50
nA
nA
ICEX
Collector Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
40
70
100
60
300
30
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.2
0.3
0.85
0.95
V
V
V
V
0.65
300
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
MHz
pF
4.0
8.0
5.0
Cobo
Cibo
NF
pF
Noise Figure
dB
I
C = 100 µA, VCE = 5.0 V,
RS =1.0kΩ,f=10 Hz to 15.7kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 3.0 V, VBE = 0.5 V,
IC = 10 mA, IB1 = 1.0 mA
VCC = 3.0 V, IC = 10mA
IB1 = IB2 = 1.0 mA
35
35
ns
ns
ns
ns
td
tr
200
50
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
400
300
200
100
0
V CE = 5V
0.15
0.1
β = 10
125 °C
125 °C
25 °C
25 °C
0.05
- 40 °C
- 40 °C
0.1
1
10
100
0.1
1
10
1 00
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
V
= 5V
1
β
= 10
CE
- 40 °C
- 40 °C
0.8
0.6
0.4
25 °C
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Capacitance vs
Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
10
500
f = 1.0 MHz
VCB= 30V
100
10
1
5
4
C
ibo
3
2
C
0.1
obo
1
0.1
25
50
75
100
125
150
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
12
12
10
8
I
= 1.0 mA
C
R
V CE = 5.0V
I
= 1.0 mA
C
= 200Ω
S
10
8
I
= 50 µA
= 1.0 kΩ
I
= 5.0 mA
C
S
C
R
I
= 50 µA
C
I
= 0.5 mA
C
R
6
6
= 200Ω
S
I
= 100 µA
4
4
C
2
2
I
= 100 µA, R = 500 Ω
C
S
0
0
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
S
- SOURCE RESISTANCE (
)
kΩ
Power Dissipation vs
Ambient Temperature
Current Gain and Phase Angle
vs Frequency
1
0.75
0.5
50
0
45
40
35
30
25
20
15
10
5
20
40
h fe
SOT-223
60
80
100
120
TO-92
θ
SOT-23
140
160
180
VCE = 40V
0.25
0
I C = 10 mA
0
1
10
100
1000
0
25
50
75
100
125
150
f - FREQUENCY (MHz)
TEMPERATURE (oC)
Turn-On Time vs Collector Current
Rise Time vs Collector Current
500
500
100
I
c
I
c
IB1= IB2
=
VCC = 40V
IB1= IB2=
10
10
40V
15V
100
T
= 25°C
J
t
@ VCC = 3.0V
r
T
= 125°C
J
2.0V
t
10
5
10
5
@ VCB = 0V
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
C
I
C
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
Fall Time vs Collector Current
500
500
100
I
I
c
c
IB1= IB2
=
IB1= IB2
=
10
10
T
= 25°C
J
T
= 125°C
VCC = 40V
J
100
T
= 125°C
J
T
= 25°C
J
10
5
10
5
1
10
100
1
10
- COLLECTOR CURRENT (mA)
100
I
- COLLECTOR CURRENT (mA)
I
C
C
Current Gain
Output Admittance
500
100
100
10
1
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
10
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input Impedance
Voltage Feedback Ratio
100
10
7
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
5
4
10
1
3
2
0.1
1
0.1
1
10
0.1
1
10
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Test Circuits
3.0 V
275 Ω
300 ns
10.6 V
Duty Cycle = 2%
10 KΩ
0
C1 < 4.0 pF
- 0.5 V
< 1.0 ns
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
t1
10 < t1
< 500 µs
10.9 V
275 Ω
Duty Cycle = 2%
10 KΩ
0
C1 < 4.0 pF
1N916
- 9.1 V
< 1.0 ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
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DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
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DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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