RMPA39000 [FAIRCHILD]
37-40 GHz GaAs MMIC Power Amplifier; 37-40 GHz的砷化镓MMIC功率放大器
| 型号： | RMPA39000 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 37-40 GHz GaAs MMIC Power Amplifier |
| 文件： | 总10页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2004
RMPA39000
37–40 GHz GaAs MMIC Power Amplifier
General Description
Features
The Fairchild Semiconductor RMPA39000 is
a
high
• 24dB small signal gain (typ.)
efficiency power amplifier designed for use in point to point
and point to multi-point radios, and various communi-
cations applications. The RMPA39000 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15µm gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
• 29dBm saturated power out (typ.)
• Circuit contains individual source vias
• Chip size 4.28mm x 2.90mm x 50µm
Device
Absolute Ratings
Symbol
Parameter
Positive DC Voltage (+5V Typical)
Ratings
Units
V
Vd
+6
-2
Vg
Negative DC Voltage
V
Vdg
Simultaneous (Vd–Vg)
+8
V
I
Positive DC Current
1092
mA
dBm
°C
D
P
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
+20
IN
C
T
T
-30 to +85
-55 to +125
17
°C
STG
R
°C/W
JC
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
Electrical Characteristics 50Ω system, Vd = +5V, Quiescent current (Idq) = 700mA
Parameter
Min
Typ
Max
Units
GHz
V
Frequency Range
37
40
1
Gain Supply Voltage (Vg)
-0.15
24
Gain Small Signal at Pin = 0dBm
Gain Variation vs. Frequency
20
dB
±1
dB
Power Output at 1dB Compression
Power Output Saturated (Pin = +13dBm)
Drain Current at Pin = 0dBm
28
dBm
dBm
mA
mA
mA
%
27.5
29
700
730
750
17
Drain Current at P1dB Compression
Drain Current at Psat (Pin = +13dBm)
Power Added Efficiency (PAE) at P1dB
OIP3 (17dBm/Tone) (10 MHz Tone Sep.)
Input Return Loss (Pin = -10dBm)
Output Return Loss (Pin = -10dBm)
36
dBm
dB
8
7
dB
Note:
1. Typical range of the negative gate voltage is -0.5V to 0.0V to set typical Idq of 700mA.
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with
gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges
through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for
appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap
between the chip and the substrate material.
DRAIN SUPPLY (Vd = +5V)
(VDA & VDB)
MMIC CHIP
RF IN
RF OUT
GROUND
(Back of the Chip)
GATE SUPPLY
(VGA & VGB)
Figure 1. Functional Block Diagram
2.490
2.598
2.580
1.655
1.475
1.295
0.370
0.352
0.0
0.0
0.202
4.002
4.280
4.141
0.102
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 4.28mm x 2.90mm x 50µm. Back of chip is RF and DC Ground)
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
DRAIN SUPPLY (Vd = +5V)
(Connect to both VDA & VDB)
10000pF
L
100pF
BOND WIRE Ls
L
MMIC CHIP
RF IN
RF OUT
L
L
GROUND
(Back of Chip)
BOND WIRE Ls
100pF
10000pF
GATE SUPPLY (Vg)
(VGA and/or VGB)
Figure 3. Recommended Application Schematic Circuit Diagram
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
Vg
(Negative)
Vd
(Positive)
10,000 pF
10,000 pF
Die-Attach
80Au/20Sn
2 mil Gap
100 pF
100 pF
5mil Thick
Alumina
50Ω
5 mil Thick
Alumina
50Ω
RF
Input
RF
Output
L< 0.015"
(4 Plcs)
100 pF
100 pF
Vg
10,000 pF
Vd
(Positive)
10,000 pF
(Negative)
Note:
Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Vd should be biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply.
Figure 4. Recommended Assembly and Bonding Diagram
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 700mA.
Step 5: After the bias condition is established, the RF input
signal may now be applied at the appropriate frequency
band.
The following sequence of steps must be followed to
properly test the amplifier.
Step 1: Turn off RF input power.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Step 2: Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Note: An example auto bias sequencing circuit to apply
negative gate voltage and positive drain voltage for the
above procedure is shown below.
Step 3: Slowly apply positive drain bias supply voltage of
+5V to Vd.
D3
D1N6098
+6V
D2
D1N6098
C1
0.1µF
R1
3.0k
R3
1.0k
+
0
*
U2
V+
LM2941T
1
2
AD820/AD
3
2
U1A
7400
CNT
V-
–
5
4
3
+2.62V
IN
OUT
MMIC_+VDD
GND
C3
22µF
C2
0.47µF
R4
1.2k
R2
6.8k
0
0
ADJ
1
0
R6
1k
R5
3k
0
0
*Adj. For –Vg
R7
–5V
MMIC_–VG
C4
0.1µF
C5
0.1µF
*
R8
1.0k
–5V Off: +3.33V
–5V Off: +1.80V
8.2k
0
0
0
Figure 5. Application Information Auto-Bias Circuit
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
Typical Characteristics
RMPA39000 Gain vs. Frequency
Vd = 5V, Id = 700mA
25.0
24.5
24.0
23.5
23.0
22.5
22.0
36.5
37.0
37.5
38.0
38.5
39.0
39.5
40.0
40.5
FREQUENCY (GHz)
RMPA39000 Saturated Pout vs. Frequency
Vd = 5V, Id = 700mA
30.0
29.5
29.0
28.5
28.0
36.5
37.0
37.5
38.0
38.5
39.0
39.5
40.0
40.5
FREQUENCY (GHz)
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
Typical Characteristics (Continued)
RMPA39000 S-Parameters vs. Frequency
Vd = 5V, Idq = 700mA
30
20
S21
10
S11
0
S22
-10
-20
-30
20
25
30
35
40
45
50
FREQUENCY (GHz)
Output Power, Power Added Efficiency, Gain and Compression
Bias Conditions: Vd = 5V, Iq = 700mA, F = 37GHz
30
25
20
15
10
Pout Max: 27.98dBm
GAIN
X
20
15
PAE
Pout
X
5
0
COMP
X
X
10
5
X
-5
-15
-10
-5
0
5
10
20
-20
15
Pin (dBm)
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
Typical Characteristics (Continued)
RMPA39000 OIP3 vs. Output Power/Tone
Vd = 5V, Idq = 700mA, Tone Sep 10 MHz
38
37
36
35
34
33
32
39GHz
38GHz
40GHz
37GHz
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Pout/TONE (dBm)
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
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