SGP20N60RUFTU [FAIRCHILD]
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN;
| 型号： | SGP20N60RUFTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN 晶体 晶体管 电动机控制 瞄准线 双极性晶体管 栅 局域网 |
| 文件： | 总7页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
SGP20N60RUF
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
•
•
•
•
Short circuit rated 10us @ T = 100°C, V = 15V
C
GE
High speed switching
Low saturation voltage : V
High input impedance
= 2.2 V @ I = 20A
CE(sat)
C
designed for
applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
G
TO-220
G C E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGP20N60RUF
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
± 20
V
Collector Current
@ T
=
25°C
32
A
C
I
I
C
Collector Current
@ T = 100°C
20
A
C
Pulsed Collector Current
60
10
A
CM (1)
T
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T = 100°C
us
W
W
°C
°C
SC
C
P
@ T
=
25°C
195
D
C
@ T = 100°C
75
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
--
Max.
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
0.64
62.5
θJC
θJA
Thermal Resistance, Junction-to-Ambient
--
©2002 Fairchild Semiconductor Corporation
SGP20N60RUF Rev. A1
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
uA
nA
CES
GES
CE
CES
GE
, V = 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 20mA, V = V
GE
5.0
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
GE(th)
C
C
C
CE
= 20A,
= 32A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
1323
254
47
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
30
49
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
48
70
200
--
V
R
= 300 V, I = 20A,
C
d(off)
f
CC
= 10Ω, V = 15V,
152
524
473
997
30
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
C
on
off
--
1400
--
ts
t
t
t
t
d(on)
r
51
--
Turn-Off Delay Time
Fall Time
52
75
400
--
V
= 300 V, I = 20A,
C
d(off)
f
CC
R
= 10Ω, V = 15V,
311
568
1031
1599
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
C
on
off
ts
--
2240
V
= 300 V, V = 15V
GE
C
CC
T
Short Circuit Withstand Time
10
--
--
us
sc
@ T = 100°C
Q
Total Gate Charge
--
--
--
--
55
10
25
7.5
80
15
40
--
nC
nC
nC
nH
g
V
V
= 300 V, I = 20A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
ge
gc
L
Measured 5mm from PKG
e
©2002 Fairchild Semiconductor Corporation
SGP20N60RUF Rev. A1
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Common Emitter
TC = 25℃
20V
15V
Common Emitter
VGE = 15V
TC
= 25℃ ━━
12V
TC = 125℃ ------
VGE = 10V
0
2
4
6
8
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage Characteristics
Fig 1. Typical Output Characteristics
5
28
VCC = 300V
Common Emitter
Load Current : peak of square wave
24
V
GE = 15V
4
3
2
1
0
40A
30A
20
16
12
8
20A
IC = 10A
Duty cycle : 50%
4
0
℃
T
C = 100
Power Dissipation = 32W
-50
0
50
100
150
0.1
1
10
100
1000
℃
Case Temperature, TC
[
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
℃
T
C = 25
TC = 125
16
12
8
40A
40A
20A
4
4
20A
IC = 10A
IC = 10A
8
0
0
0
4
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
SGP20N60RUF Rev. A1
2400
2000
1600
1200
800
400
0
Common Emitter
GE = 0V, f = 1MHz
TC = 25℃
Common Emitter
V
±
15V
VCC = 300V, VGE
IC = 20A
=
℃ ━━
= 25
TC
Ton
Tr
Cies
℃
TC = 125 ------
100
Coes
Cres
10
1
10
Collector - Emitter Voltage, VCE [V]
1
10
Gate Resistance, RG [Ω]
100
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
±
15V
VCC = 300V, VGE
C = 20A
=
I
℃ ━━
= 25
TC
TC = 125 ------
1000
℃
Eoff
1000
Eon
Eoff
Toff
Tf
Toff
Common Emitter
±
15V
V
CC = 300V, VGE
=
Tf
I
C = 20A
℃ ━━
= 25
TC
C = 125 ------
100
℃
T
100
1
10
Gate Resistance, RG [Ω]
100
1
10
Gate Resistance, RG [Ω]
100
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
±
VGE
TC
TC = 125 ------
=
15V, RG = 10Ω
℃ ━━
25
℃
=
Ton
100
Toff
Tf
Tr
Toff
Tf
100
Common Emitter
±
25
VGE
TC
=
15V, RG = 10Ω
℃ ━━
=
℃
T
C = 125 ------
30 35
Collector Current, IC [A]
10
10
15
20
25
30
35
40
10
15
20
25
40
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
SGP20N60RUF Rev. A1
15
12
9
Common Emitter
RL = 15 Ω
TC = 25℃
Common Emitter
VGE = ± 15V, R = 10Ω
G
TC
= 25℃ ━━
Eoff
Eoff
TC = 125℃ ------
VCC = 100 V
300 V
200 V
1000
Eon
6
3
100
0
10
15
20
25
30
35
40
0
10
20
30
40
50
60
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
100
IC MAX. (Pulsed)
㎲
50
㎲
100
IC MAX. (Continuous)
㎳
1
10
DC Operation
10
1
Single Nonrepetitive
℃
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
℃
VGE = 20V, TC = 100
10 100
Collector-Emitter Voltage, VCE [V]
0.1
1
0.3
1
10
100
1000
1
1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
Pdm
0.01
0.01
1E-3
t1
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + TC
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGP20N60RUF Rev. A1
Package Dimension
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
–0.05
1.30
ø3.60 ±0.10
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGP20N60RUF Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FAST®
FASTr™
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HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
SLIENT SWITCHER® UHC™
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
UltraFET®
VCX™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™ TinyLogic™
Quiet Series™ TruTranslation™
FACT Quiet Series™ MicroPak™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
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