SI3446DVD87Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6;
| 型号： | SI3446DVD87Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2001
SI3446DV
Ò
Single N-Channel, 2.5V Specified PowerTrench MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
• 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V
RDS(on) = 0.032 Ω @ VGS = 2.5 V
• Fast switching speed.
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
• Low gate charge (10.5nC typical).
• High performance trench technology for extremely
low RDS(ON)
.
Applications
• SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
• DC/DC converter
• Load switch
• Battery Protection
S
1
6
5
4
D
D
2
3
G
D
SuperSOT TM-6
D
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
SI3446DV
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
20
V
V
A
8
±
Drain Current - Continuous
Drain Current - Pulsed
6.2
20
(Note 1a)
PD
Power Dissipation for Single Operation
1.6
W
(Note 1a)
(Note 1b)
0.8
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
78
30
Rθ
(Note 1a)
(Note 1)
C/W
C/W
°
JA
Thermal Resistance, Junction-to-Case
Rθ
°
JC
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.637
FDC637AN
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
SI3446DV Rev. A
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
Drain-Source Breakdown Voltage
20
V
VGS = 0 V, I = 250
A
µ
D
Breakdown Voltage Temperature
Coefficient
14
I = 250 A, Referenced to 25 C
mV/ C
°
∆
µ
°
D
T
∆
J
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
A
µ
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
100
-100
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
0.4
10
0.82
-3
1.5
V
VDS = VGS, I = 250
A
µ
D
Gate Threshold Voltage
Temperature Coefficient
V
∆
I =250 A,Referenced to 125 C
mV/ C
∆
µ
°
°
GS(th)
D
T
J
RDS(on)
Static Drain-Source
On-Resistance
VGS = 4.5 V,ID = 6.2 A
0.019 0.024
0.028 0.041
0.025 0.032
Ω
VGS = 4.5 V,I = 6.2 A,T =125 C
°
D
J
VGS = 2.5 V, ID = 5.2 A
ID(on)
gFS
On-State Drain Current
VGS = 4.5 V, VDS = 5 V
A
S
Forward Transconductance
VDS = 5 V, ID = 6.2 A
7.4
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
V
DS = 10 V, VGS = 0 V,
1125
290
pF
pF
pF
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
145
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
DD = 10 V, ID = 1 A,
GS = 4.5 V, RGEN = 6
9
13
18
24
42
20
16
ns
ns
Ω
26
ns
11
ns
Qg
Qgs
Qgd
V
V
DS = 5 V, ID = 6.2 A,
GS = 4.5 V
10.5
1.5
2.2
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
1.3
1.2
A
V
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A
0.7
(Note 2)
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper.
b) 156° C/W when mounted on a minimum pad of 2 oz.copper.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
SI3446DV Rev. A
Typical Characteristics
20
2.5
2
VGS= 4.5V
2.5V
3.0V
16
12
8
2.0V
VGS= 2.0V
1.5
1
2.5V
3.0V
4.5V
15
4
1.5V
0.5
0
0
5
10
ID, DRAIN CURRENT (A)
20
0
0.4
0.8
1.2
1.6
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.08
0.06
0.04
0.02
0
1.5
1.4
1.3
1.2
1.1
1
ID= 6.2A
ID= 6.2A
VGS= 4.5V
TJ= 125oC
25oC
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
10
1
20
15
10
5
TJ= -55oC
25oC
VGS = 0
VDS= 5V
125oC
TJ= 125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
VSD, BODY DIODE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
SI3446DV Rev. A
Typical Characteristics (continued)
1800
1500
1200
900
600
300
0
5
VDS = 5V
f = 1MHz
VGS = 0V
ID = 6.2A
10V
15V
4
3
2
1
0
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics
Figure 8. Capacitance Characteristics
5
4
3
2
1
0
100
10
SINGLE PULSE
R
θJA = 156oC/W
TA = 25oC
100
s
µ
RDS(ON) LIMIT
1ms
10ms
100ms
1s
1
DC
VGS= 4.5V
SINGLE PULSE
RθJA= 156oC/W
TA= 25oC
0.1
0.01
0.1
1
10
100
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.5
R
(t) = r(t) * R
θ
θJA
R
JA
= 156°C/W
θJA
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
t
1
t
2
0.02
T
- T = P * R
(t)
θJA
J
A
0.02
0.01
Duty Cycle, D = t / t
1
2
Single Pulse
0.01
0.005
0.00001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
SI3446DV Rev. A
SuperSOTTM-6 Tape and Reel Data
SSOT-6 Packaging
Configuration:
Figure 1.0
Packaging Description:
Customize Label
SSOT-6 parts are shipped in tape. The carrier tape is
made from
a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Antistatic Cover Tape
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with
printing. One pizza box contains three reels maximum.
And these pizza boxes are placed inside barcode
a Fairchild logo
a
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
Embossed
Carrier Tape
F63TNR
Label
631
631
631
631
631
SSOT-6 Packaging Information
Pin 1
Standard
Packaging Option
D87Z
(no flow c ode)
Packaging type
TNR
3,000
7" Dia
TNR
10,000
13"
SSOT-6 Unit Orientation
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
184x187x47 343x343x64
9,000
0.0158
0.1440
30,000
0.0158
0.4700
343mm x 342mm x 64mm
Intermediate box for D87Z Option
F63TNR Label
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
F63TNR
Label
F63TNR Label sample
F63TNR
Label
LOT: CBVK741B019
FSID: FDC633N
QTY: 3000
SPEC:
184mm x 187mm x 47mm
Pizza Box for Standard Option
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
SSOT-6 Tape Leader and Trailer
N/F: F
(F63TNR)3
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Component s
Trailer Tape
Leader Tape
300mm minimum or
75 empty poc kets
500mm minimum or
125 empty poc kets
August 1999, Rev. C
©2000 Fairchild Semiconductor International
SuperSOTTM-6 Tape and Reel Data, continued
SSOT-6 Embossed Carrier Tape
Configuration:
Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.37
+/-0.10
0.255
+/-0.150
5.2
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SSOT-6 Reel Configuration:
Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
Diameter Option
7"
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Reel
Option
Tape Size
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
8mm
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
13" Dia
July 1999, Rev. C
SuperSOTTM-6 Package Dimensions
SuperSOT -6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
September 1998, Rev. A
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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