SI3861 [FAIRCHILD]
Integrated Load Switch; 集成负载开关
| 型号： | SI3861 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Integrated Load Switch |
| 文件： | 总4页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2001
Si3861DV
Integrated Load Switch
Features
General Description
• –2.8 A, –8 V. RDS(ON) = 55 mΩ @ VGS = –4.5 V
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOTTM-6
package.
R
R
DS(ON) = 70 mΩ @ VGS = –2.5 V
DS(ON) = 100 mΩ @ VGS = –1.8 V
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely
low RDS(ON)
Applications
• Load switch
• Power management
Equivalent Circuit
Q2
Vin,R1
4
Vout,C1
3
IN
OUT
+
–
V
DROP
ON/OFF
Vout,C1
R2
5
2
1
Q1
G
R1,C1
6
ON/OFF
Pin 1
See Application Circuit
SuperSOT™-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VIN
Maximum Input Voltage
V
V
A
8
VON/OFF
ILoad
High level ON/OFF voltage range
Load Current – Continuous
– Pulsed
–0.5 to 8
–2.8
(Note 1)
(Note 1)
–9
0.7
Maximum Power Dissipation
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
180
60
RθJA
RθJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
8mm
Quantity
3000 units
.861
Si3861DV
7’’
Si3861DV Rev B(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVIN
ILoad
IFL
Vin Breakdown Voltage
8
V
VON/OFF = 0 V, ID = –250 µA
Zero Gate Voltage Drain Current
Leakage Current, Forward
Leakage Current, Reverse
VIN = 6.4 V,
VON/OFF = 0 V
–1
–100
100
µA
nA
nA
VON/OFF = 0 V, VIN = 8 V
VON/OFF = 0 V, VIN = –8 V
IRL
On Characteristics
(Note 2)
VON/OFF (th) Gate Threshold Voltage
0.4
0.9
1.5
V
VIN = VON/OFF, ID = –250 µA
RDS(on)
Static Drain–Source
34
45
64
3.1
3.8
55
VIN = 4.5 V,
ID = –2.8A
ID = –2.5 A
ID = –2.0 A
ID = 0.4A
ID = 0.2 A
mΩ
On–Resistance (Q2)
70
V
IN = 2.5 V,
100
4
5
VIN = 1.8 V,
VIN = 4.5 V,
VIN = 2.7 V,
RDS(on)
Static Drain–Source
On–Resistance (Q1)
Ω
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.6
–1.2
A
V
VSD
Drain–Source Diode Forward
VON/OFF = 0 V, IS = –0.6 A (Note 2)
Voltage
Notes:
1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R θJC is guaranteed by design while R θJA is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Si3861DV Load Switch Application Circuit
Q2
IN
OUT
C1
R1
Q1
LOAD
ON/OFF
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.
Si3861DV Rev B(W)
0.4
0.35
0.3
0.4
0.35
0.3
VIN = -2.5V
VON/OFF = -1.5V -8V
PW = 300us, D < 2%
VIN = -1.8V
VON/OFF = -1.5V -8V
PW = 300us, D < 2%
TJ = 125O
C
TJ = 125O
C
0.25
0.2
0.25
0.2
TJ = 25O
C
TJ = 25O
C
0.15
0.1
0.15
0.1
0.05
0
0.05
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-IL, (A)
-IL, (A)
Figure 1. Conduction Voltage Drop
Variation with Load Current.
Figure 2. Conduction Voltage Drop
Variation with Load Current.
0.4
0.35
0.3
VIN = -4.5V
0.15
0.125
0.1
V
ON/OFF = -1.5V -8V
IL = -1A
PW = 300us, D < 2%
V
ON/OFF = -1.5V -8V
PW = 300us, D < 2%
0.25
0.2
TJ = 125O
C
0.075
0.05
0.025
0
0.15
0.1
TJ = 125OC
TJ = 25O
C
TJ = 25OC
0.05
0
0
1
2
3
4
5
6
-IL, (A)
1
2
3
4
5
-VIN, INPUT VOLTAGE (V)
Figure 3. Conduction Voltage Drop
Variation with Load Current.
Figure 4. On-Resistance Variation
With Input Voltage
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 156 °C/W
0.2
P(pk)
0.1
0.1
t1
t2
0.05
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Si3861DV Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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