SFM26-L [FORMOSA]
Chip Silicon Rectifier - Super fast recovery type; 芯片硅整流 - 超快恢复型
| 型号： | SFM26-L |
| 厂家： | 
FORMOSA MS |
| 描述： | Chip Silicon Rectifier - Super fast recovery type |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Silicon Rectifier
SFM21-L THRU SFM26-L
Super fast recovery type
Features
SMA-L
●
Plastic package has Underwriters Laboratory
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
FlammabilityClassification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
0.110(2.8)
0.094(2.4)
●
For surface mounted applications.
●
Exceeds environmental standards of MIL-S-19500 /
228
0.181(4.6)
0.165(4.2)
●
Low leakage current.
0.075(1.9)
0.067(1.7)
0.034(0.85)
0.024(0.60)
0.034(0.85)
0.024(0.60)
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
2.0
UNIT
A
Forward rectified current
Ambient temperature = 50oC
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
Reverse current
50
A
IFSM
VR = VRRM TA
=
25oC
5.0
100
uA
uA
IR
VR = VRRM TA = 100oC
Thermal resistance
Junction to ambient
75
10
oC / w
RθJA
CJ
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
pF
-55
+150
oC
TSTG
Operating
temperature
*1
*2
*3
*4
*5
VRRM
VRMS
VR
VF
TRR
MARKING
SYMBOLS
CODE
(oC)
(V)
(V)
(V)
(V)
(nS)
SFM21-L
SFM22-L
SFM23-L
SFM24-L
SFM25-L
SFM26-L
S21
S22
S23
S24
S25
S26
50
35
50
*1 Repetitive peak reverse voltage
*2 RMS voltage
100
150
200
300
400
70
100
150
200
300
400
0.95
1.25
105
140
210
280
35
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (SFM21-L THRU SFM26-L)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
10
2.4
2.0
1.6
1.2
1.0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.8
0.4
0
.1
.01
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
0
.001
1.6 1.8
.4
.6
.8
1.0 1.2 1.4
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
8.3ms Single Half
Tj=25 C
Sine Wave
50
Ω
10Ω
NONINDUCTIVE
JEDEC method
NONINDUCTIVE
(
)
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
50
1
5
10
100
(
)
(+)
1 Ω
NON-
INDUCTIVE
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
trr
60
50
40
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
30
20
10
0
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
相关型号：
©2020 ICPDF网 联系我们和版权申明