AOD8N25 [FREESCALE]
250V,8A N-Channel MOSFET; 250V ， 8A N沟道MOSFET
| 型号： | AOD8N25 |
| 厂家： | 
Freescale |
| 描述： | 250V,8A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：424K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
General Description
The AOD8N25 & AOI8N25 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
designs.These parts are ideal for boost converters and
adopted quickly into new and existing offline power supply
synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
VDS
300V@150℃
8A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.56Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
250
±30
8
V
V
VGS
TC=25°C
Continuous Drain
CurrentB
ID
TC=100°C
5
A
Pulsed Drain Current C
Avalanche Current C
IDM
16
2.1
IAS
A
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
EAS
dv/dt
132
mJ
V/ns
W
W/ oC
5
78
PD
Power Dissipation B
Derate above 25oC
0.63
-50 to 150
Junction and Storage Temperature Range
TJ, TSTG
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
°C
Thermal Characteristics
Parameter
Symbol
RθJA
Typical
Maximum
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
45
-
55
0.5
1.6
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
RθCS
RθJC
1.3
1/6
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AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
250
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
300
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.25
VDS=250V, VGS=0V
VDS=200V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=1.5A
VDS=40V, ID=1.5A
IS=1A,VGS=0V
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.3
nΑ
V
3.1
3.7
0.46
5
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.56
Ω
S
VSD
0.77
1
8
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
16
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
306
51
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
3.2
3.4
V
1.7
5.1
7.2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
6.0
2.0
1.5
14
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=200V, ID=1.5A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=125V, ID=1.5A,
Turn-On Rise Time
12
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
23
Turn-Off Fall Time
12
trr
IF=1.5A,dI/dt=100A/µs,VDS=100V
IF=1.5A,dI/dt=100A/µs,VDS=100V
77
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
0.29
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C
2/6
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AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
100
10
1
10V
VDS=40V
6.5V
6V
-55°C
6
125°C
4
5.5V
25°C
2
VGS=5V
0
0.1
0
5
10
15
20
25
2
4
6
8
10
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
3
1.5
1.2
0.9
0.6
0.3
0.0
2.5
2
VGS=10V
ID=1.5A
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
2
4
6
8
10
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
125°C
25°C
0.9
0.8
-100
-50
0
50
100
150
200
0.2
0.4
0.6
VSD (Volts)
0.8
1.0
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Figure 6: Body-Diode Characteristics
3/6
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AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
1000
100
10
Ciss
VDS=200V
ID=1.5A
Coss
6
Crss
3
0
1
0
2
4
6
8
10
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
800
600
400
200
0
100
10
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1
DC
1ms
10ms
0.1
0.01
TJ(Max)=150°C
TC=25°C
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.6°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
4/6
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AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
75
60
45
30
15
0
10.0
8.0
6.0
4.0
2.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note B)
Figure 13: Current De-rating (Note B)
400
300
200
100
0
TJ(Max)=150°C
TA=25°C
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
1E-05
0.0001
0.01
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
0.1
1
10
100
1000
5/6
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AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
6/6
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