AOI4102 [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AOI4102 |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4102/AOI4102
30V N-Channel MOSFET
General Description
technology and design to provide excellent RDS(ON) with
The AOD4102/AOI4102 uses advanced trench
low gate charge. This device is suitable for use in PWM,
load switching and general purpose applications.
Features
VDS
30V
ID (at VGS=10V)
19A
R
DS(ON) (at VGS=10V)
< 37mΩ
< 64mΩ
RDS(ON) (at VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
19
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
13
A
Pulsed Drain Current C
IDM
30
TA=25°C
TA=70°C
8
Continuous Drain
Current
IDSM
A
6.5
Avalanche Current C
IAS, IAR
9
12
A
Avalanche energy L=0.3mH C
EAS, EAR
mJ
TC=25°C
Power Dissipation B
TC=100°C
21
PD
W
10
TA=25°C
4.2
PDSM
W
°C
Power Dissipation A
2.7
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
20
Max
30
60
7
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
50
RθJC
4.5
1/6
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AOD4102/AOI4102
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=12A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
3
µA
V
VGS(th)
ID(ON)
1
1.8
30
A
30
46
37
55
mΩ
T0252
TJ=125°C
VGS=4.5V, ID=7A
TO252
53
64
mΩ
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=12A
TO251A
30.5
53.5
37.5
64.5
VGS=4.5V, ID=7A
TO251A
V
DS=5V, ID=10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
12
S
V
A
IS=1A,VGS=0V
0.77
1
Maximum Body-Diode Continuous Current
12
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
288
31
360
45
30
1
432
59
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
18
42
VGS=0V, VDS=0V, f=1MHz
0.5
1.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.3
2.5
1.2
1.3
6.6
3.2
1.5
2.2
4.3
10
8
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
4
VGS=10V, VDS=15V, ID=12A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
1.8
3.1
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
ns
tD(off)
tf
12.8
3.2
ns
ns
trr
IF=12A, dI/dt=100A/µs
IF=12A, dI/dt=100A/µs
11
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14
6
17
ns
Qrr
4.5
nC
7.2
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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AOD4102/AOI4102
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
10
-40°C
25°C
VDS=5V
6V
7V
5V
4.5V
4V
125°C
3.5V
VGS=3V
0
0
2
3
4
5
6
7
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
80
1.6
1.4
1.2
1.0
0.8
70
60
50
40
30
20
10
0
VGS=4.5V
VGS=10V
ID=12A
VGS=4.5V
VGS=10V
ID=7A
-50 -25
0
25
50
75 100 125 150 175
0
5
10
15
20
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
120
90
60
30
0
1.0E+01
ID=12A
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
-40°C
25°C
25°C
6
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
4
5
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AOD4102/AOI4102
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
600
500
400
300
200
100
0
VDS=15V
ID=12A
8
Ciss
6
4
2
Coss
Crss
0
0
1
2
3
4
5
6
7
0
5
10
15
20
25
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
80
60
40
20
0
100.0
10.0
1.0
10µs
100µs
1ms
TJ(Max)=175°C
TC=25°C
RDS(ON)
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/6
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AOD4102/AOI4102
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
25
20
15
10
5
25
20
15
10
5
TA=25°C
TA=150°C
0
0
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
0
25
50
75
100
125
150
175
Time in avalanche, tA (s)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
1000
100
10
25
20
15
10
5
TA=25°C
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOD4102/AOI4102
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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