AOI4146 [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AOI4146 |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：487K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4146/AOI4146
30V N-Channel MOSFET
General Description
The AOD4146/AOI4146 is fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with low
controlled switching behavior. This universal technology is
gate charge.The result is outstanding efficiency with
applications.
well suited for PWM, load switching and general purpose
Features
VDS
30V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
55A
< 5.6mΩ
< 9.5mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
55
V
A
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
43
Pulsed Drain Current C
IDM
190
15
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
A
12
IAS, IAR
50
A
EAS, EAR
63
mJ
TC=25°C
Power Dissipation B
TC=100°C
62
PD
W
31
TA=25°C
2.5
PDSM
W
°C
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
15
41
2
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
50
RθJC
2.4
1/7
www.freescale.net.cn
AOD4146/AOI4146
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
100
µA
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
500
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1.6
2.1
190
A
4.7
7.4
7.9
50
5.6
8.9
9.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=10A
mΩ
S
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current
55
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1630 2037 2440
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
260
130
0.5
375
220
1.1
490
300
1.7
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
28
13
35
16
8.6
4.6
8.8
26
23
6
42
20
10
6.4
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.8
2.8
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10
15
12
18
ns
Qrr
12
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/7
www.freescale.net.cn
AOD4146/AOI4146
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
5V
10V
VDS=5V
4.5V
6V
7V
4V
125°C
VGS=3.5V
25°C
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
15
12
9
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
6
VGS=4.5V
VGS=10V
3
ID=20A
0.8
0
0
25
50
75
100 125 150 175 200
0
5
10
15
ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
20
16
12
8
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
4
25°C
0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/7
www.freescale.net.cn
AOD4146/AOI4146
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
2500
2000
1500
1000
500
VDS=15V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
20
25
30
35
40
0
5
10
VDS (Volts)
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.4°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/7
www.freescale.net.cn
AOD4146/AOI4146
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
10
0.000001
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche
capability (Note C)
100000
10000
1000
100
60
50
40
30
20
10
0
TA=25°C
10
1
0.00001
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
150
175
Pulse Width (s)
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
0.1
1
10
100
1000
5/7
www.freescale.net.cn
AOD4146/AOI4146
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
12
10
8
16
3
di/dt=800A/µs
14
di/dt=800A/µs
2.5
2
12
125ºC
125ºC
10
8
Qrr
trr
6
25ºC
1.5
1
25ºC
6
125ºC
25ºC
4
125ºC
25ºC
Irm
S
4
2
0.5
0
2
0
0
0
0
5
10
15
IS (A)
20
25
30
0
5
10
15
20
25
30
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
20
15
10
5
10
15
12
9
2.5
2
Is=20A
Is=20A
8
125ºC
125ºC
trr
25ºC
6
4
2
0
1.5
1
25ºC
125º
Qrr
6
125ºC
25ºC
S
3
25ºC
0.5
0
Irm
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
6/7
www.freescale.net.cn
AOD4146/AOI4146
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
7/7
www.freescale.net.cn
相关型号：
AOI452A
Power Field-Effect Transistor, 55A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3
AOS
©2020 ICPDF网 联系我们和版权申明