AOL1242 [FREESCALE]
40V N-Channel MOSFET; 40V N沟道MOSFET
| 型号： | AOL1242 |
| 厂家： | 
Freescale |
| 描述： | 40V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1242
40V N-Channel MOSFET
General Description
The AOL1242 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
minimized due to an extremely low combination of
frequency switching performance.Power losses are
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
Features
VDS
40V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
69A
< 5.2mΩ
< 7.9mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
69
V
A
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
54
IDM
205
14
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
11
IAS, IAR
40
A
EAS, EAR
80
mJ
TC=25°C
Power Dissipation B
TC=100°C
68
PD
W
34
TA=25°C
2.1
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
20
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
50
60
RθJC
1.8
2.2
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AOL1242
40V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS，ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.3
nA
V
VGS(th)
ID(ON)
1.3
1.8
205
A
4.2
6.9
6.1
70
5.2
8.5
7.9
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
mΩ
S
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.7
1
V
69
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1080 1350 1620
pF
pF
pF
Ω
VGS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
280
7
405
26
2
530
45
3
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1Ω,
1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15
5
19
8
23
11
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.5
2.3
6
2.5
23
4
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
10
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15.5
31
21
41
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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AOL1242
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
10V
VDS=5V
4.5V
7V
3.5V
3V
80
60
40
20
0
125°C
25°C
VGS=2.5V
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
8
7
6
5
4
3
2
2.2
2
VGS=4.5V
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=20A
0.8
0
25
50
75
100 125 150 175 200
0
10
20
ID (A)
30
40
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
15
12
9
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
6
25°C
3
25°C
0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AOL1242
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1600
VDS=20V
ID=20A
Ciss
8
1400
1200
1000
800
600
400
200
0
6
Coss
4
2
Crss
0
0
5
10
Qg (nC)
15
20
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
25
30
35
40
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Ca
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.2°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOL1242
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
70
60
TA=25°C
TA=100°C
50
100
40
TA=150°C
30
10
TA=125°C
20
10
1
0
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
80
70
60
50
40
30
20
10
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
150
175
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOL1242
40V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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