AON6435 [FREESCALE]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AON6435 |
| 厂家： | 
Freescale |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总7页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6435
30V P-Channel MOSFET
General Description
The AON6435 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON)
. This device is ideal for load switch and battery protection applications.
Features
VDS
-30V
ID (at VGS= -10V)
RDS(ON) (at VGS= -10V)
RDS(ON) (at VGS =-5V)
-34A
< 17mΩ
< 34mΩ
D
Top View
1
8
2
3
7
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
-34
V
A
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
-21.5
-95
IDM
TA=25°C
TA=70°C
-12
Continuous Drain
Current
IDSM
A
-10
Avalanche Current C
IAS
24
A
Avalanche energy L=0.1mH C
EAS
29
mJ
TC=25°C
Power Dissipation B
TC=100°C
31
PD
W
12.5
4.1
TA=25°C
PDSM
W
°C
Power Dissipation A
2.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
24
Max
30
64
4
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
53
RθJC
3.4
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AON6435
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS=±25V
VDS=VGS, ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
-95
-2.3
A
13
19
17
25
34
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-5V, ID=-15A
25
mΩ
S
VDS=-5V, ID=-20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
28
IS=-1A,VGS=0V
-0.73
-1
V
Maximum Body-Diode Continuous Current
-35
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1130 1400
pF
pF
pF
Ω
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
240
155
V
V
GS=0V, VDS=-15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
GS=-10V, VDS=-15V, ID=-20A
GS=-10V, VDS=-15V,
5.8
8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
21
10
4
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
V
V
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6
10
8
ns
RL=0.75Ω, RGEN=3Ω
tD(off)
tf
15
7
ns
ns
trr
IF=-20A, dI/dt=500A/µs
IF=-20A, dI/dt=500A/µs
13.5
29
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON6435
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
80
60
40
20
0
-10V
VDS=-5V
-8V
-6V
125°C
25°C
-4.5V
VGS=-4V
4
0
1
2
3
5
1
2
3
4
5
6
7
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
35
30
25
20
15
10
5
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-20A
VGS=-5V
=-5V
VGS
ID=-15A
VGS=-10V
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
-ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
50
40
30
20
10
1.0E+01
ID=-20A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON6435
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
1600
1400
1200
1000
800
600
400
200
0
VDS=-15V
ID=-20A
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
400
350
300
250
200
150
100
50
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
100
10
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4°C/W
PD
0.1
0.01
Ton
T
Single Pulse
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
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AON6435
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
40
35
30
25
20
15
10
5
TA=25°C
TA=100°C
TA=150°C
TA=125°C
1
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
40
35
30
25
20
15
10
5
1000
100
10
10µs
RDS(ON)
limited
100µs
1ms
10ms
1
TJ(Max)=150°C
TA=25°C
0.1
0.01
DC
0
0.01
0.1
1
10
100
0
25
50
75
100
125
150
-VDS (Volts)
TCASE (°C)
Figure 14: Current De-rating (Note F)
Figure 15: Maximum Forward Biased
Safe Operating Area (Note H)
400
350
300
250
200
150
100
50
TA=25°C
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note H)
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AON6435
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=64°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance (Note H)
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AON6435
30V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
f
td(off)
td(on)
t
r
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
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