AON6448 [FREESCALE]
80V N-Channel MOSFET; 80V N沟道MOSFET型号: | AON6448 |
厂家: | Freescale |
描述: | 80V N-Channel MOSFET |
文件: | 总7页 (文件大小:456K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AON6448
80V N-Channel MOSFET
General Description
The AON6448 is fabricated with SDMOS TM
technology that combines excellent R
trench
DS(ON) with low gate
switching behavior. This universal technology is we
applications.
charge.The result is outstanding efficiency with controlled
ll
suited for PWM, load switching and general purpose
Features
VDS
80V
65A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
< 9.6mΩ
< 12mΩ
D
Top View
1
8
2
3
7
6
G
4
5
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
80
±25
65
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
41
A
Pulsed Drain Current C
IDM
138
11
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
9.0
IAS, IAR
50
A
EAS, EAR
125
83
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
33
TA=25°C
2.5
PDSM
W
°C
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
50
RθJC
1.5
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AON6448
80V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
80
V
VDS=80V, VGS=0V
10
µA
50
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
V
DS=0V, VGS= ±25V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3.7
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A
2.7
3.2
140
A
7.9
13.3
9.6
9.6
16
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=7V, ID=10A
12
mΩ
S
VDS=5V, ID=10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.65
1
V
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2100 2600 3100
pF
pF
pF
Ω
VGS=0V, VDS=40V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
240
70
340
120
0.8
440
170
1.2
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=40V, ID=10A
VGS=10V, VDS=40V, RL=4Ω,
0.4
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
35
11
8
44
14
53
17
20
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
14
18
10
RGEN=3Ω
tD(off)
tf
24.5
5.2
trr
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs
12
45
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17
65
22
85
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON6448
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100
80
140
120
100
80
10V
7.5V
7V
VDS=5V
9V
8.5V
8V
6.5V
60
60
6V
40
40
125°C
25°C
VGS=5.5V
20
20
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V
GS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
11
10
9
2.2
2
VGS=7V
VGS=10V
ID=10A
1.8
1.6
1.4
1.2
1
8
VGS=7V
VGS=10V
ID=10A
7
0.8
6
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
20
18
16
14
12
10
8
1.0E+02
1.0E+01
ID=10A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
6
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
4
8
12
16
20
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON6448
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4500
4000
10
VDS=40V
ID=10A
8
3500
3000
2500
2000
1500
1000
500
Ciss
6
4
2
Coss
Crss
0
0
0
10
20
30
40
50
0
10
20
30
40
50
60
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
360
320
280
240
200
160
120
80
1000.0
100.0
10.0
1.0
10µs
TJ(Max)=150°C
TC=25°C
RDS(ON)
limited
100µs
DC
1ms
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
θJC=1.5°C/W
T
R
0.1
PD
Ton
Single Pulse
0.0001
T
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
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AON6448
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=125°C
TA=150°C
0.00001
0
0
25
50
75
100
125
150
0.000001
0.0001
0.001
Time in avalanche, tA (s)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
80
70
60
50
40
30
20
10
0
TA=25°C
1
0.0001
0.01
1
100
10000
0
25
50
75
100
125
150
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
θJA=50°C/W
R
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
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AON6448
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
160
140
120
100
80
15
13
11
9
24
20
16
12
8
3
di/dt=800A/µs
125ºC
2.5
125ºC
2
Irm
25ºC
trr
S
25ºC
7
1.5
1
125ºC
5
3
125ºC
25ºC
Qrr
25ºC
4
0.5
0
1
di/dt=800A/µs
60
-1
0
0
5
10
15
20
25
30
0
5
10
15
IS (A)
20
25
30
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
160
12
9
30
25
20
15
10
5
2.5
2
Is=10A
Is=10A
125ºC
125ºC
25ºC
140
120
100
80
125ºC
1.5
1
25ºC
trr
6
25ºC
Irm
125º
3
0.5
0
60
S
Qrr
25ºC
200
40
0
0
0
200
400
600
800
1000
0
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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AON6448
80V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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