AON6442 [AOS]
40V N-Channel MOSFET; 40V N沟道MOSFET
| 型号： | AON6442 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 40V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6442
40V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6442 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled
with a "Schottky style" soft recovery body diode.
40V
32A
ID (at VGS=10V)
< 4.8mΩ
< 7mΩ
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Top View
Bottom View
1
2
3
4
8
7
6
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
40
V
V
VGS
ID
IDM
IDSM
Gate-Source Voltage
±20
65
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
TC=100°C
42
A
A
168
22
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
18
IAS, IAR
40
A
EAS, EAR
80
mJ
TC=25°C
35.7
14
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
4.2
PDSM
W
2.7
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
25
Max
30
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
55
65
Steady-State
Steady-State
RθJC
2.6
3.5
Rev 0 : Dec 2009
www.aosmd.com
Page 1 of 6
AON6442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100
2.4
nA
V
VGS(th)
ID(ON)
1.4
1.9
168
A
V
GS=10V, ID=20A
4
4.8
7.5
7
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
6.2
5.5
67
VGS=4.5V, ID=15A
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.7
1
Maximum Body-Diode Continuous CurrentG
32
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1460 1830 2200
pF
pF
pF
Ω
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
365
20
521
43
680
73
0.4
0.8
1.2
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
22
10
3
27.8
12.8
3.9
6
35
15
5
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=20V, ID=20A
2
10
7.2
3
VGS=10V, VDS=20V, RL=1Ω,
ns
R
GEN=3Ω
tD(off)
tf
23
ns
3.5
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
11
28
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
16.5
40
21
52
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2009
www.aosmd.com
Page 2 of 6
AON6442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
80
60
40
20
0
10V
VDS=5V
6V
7V
3.5V
3V
125°C
2.5
25°C
VGS=2.5V
4
1
1.5
2
3
3.5
4
0
1
2
3
5
V
GS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
10
8
2
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=20A
6
4
VGS=10V
VGS=4.5V
2
ID=15A
0.8
0
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
15
12
9
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
6
25°C
3
25°C
0
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Dec 2009
www.aosmd.com
Page 3 of 6
AON6442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
2500
2000
1500
1000
500
VDS=20V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
Qg (nC)
20
25
30
0
5
10
15
20
25
30
35
40
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
10µs
TJ(Max)=150°C
TC=25°C
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=3.5°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Dec 2009
www.aosmd.com
Page 4 of 6
AON6442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
40
30
TA=25°C
TA=100°C
100
20
10
0
TA=125°C
TA=150°C
10
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
80
70
60
50
40
30
20
10
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Dec 2009
www.aosmd.com
Page 5 of 6
AON6442
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: Dec 2009
www.aosmd.com
Page 6 of 6
相关型号：
©2020 ICPDF网 联系我们和版权申明