AON7407 [FREESCALE]
20V P-Channel MOSFET; 20V P沟道MOSFET
| 型号： | AON7407 |
| 厂家： | 
Freescale |
| 描述： | 20V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：475K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7407
20V P-Channel MOSFET
General Description
technology with a low resistance package to provide
The AON7407 combines advanced trench MOSFET
extremely low RDS(ON)
. This device is ideal for load switch
and battery protection applications.
Features
VDS
-20V
ID (at VGS=-4.5V)
RDS(ON) (at VGS =-4.5V)
-40A
< 9.5mΩ
< 12.5mΩ
< 18mΩ
R
DS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
D
Top View
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-20
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±8
TC=25°C
-40
Continuous Drain
Current G
ID
TC=100°C
A
-29
Pulsed Drain Current C
IDM
-100
-14.5
-11.5
-40
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
IDSM
A
IAS, IAR
A
Avalanche energy L=0.1mH C
EAS, EAR
80
mJ
TC=25°C
Power Dissipation B
TC=100°C
29
PD
W
12
TA=25°C
3.1
PDSM
W
°C
Power Dissipation A
2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
60
75
RθJC
3.5
4.2
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AON7407
20V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-20
V
VDS=-20V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±8V
VDS=VGS, ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-14A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-0.9
nA
V
VGS(th)
ID(ON)
-0.3
-0.55
-100
A
7.6
10.5
9.3
9.5
13.5
12.5
18
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-13A
VGS=-1.8V, ID=-11A
VDS=-5V, ID=-14A
IS=-1A,VGS=0V
mΩ
mΩ
S
11.4
72
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.52
-1
V
Maximum Body-Diode Continuous Current
-35
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2795
365
3495
528
425
2.8
4195
690
595
5.6
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
255
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
35
44
9
53
nC
nC
nC
ns
ns
ns
ns
ns
nC
VGS=-4.5V, VDS=-10V, ID=-14A
11
18
32
136
59
33
100
VGS=-4.5V, VDS=-10V,
RL=0.75Ω, RGEN=3Ω
tD(off)
tf
trr
IF=-14A, dI/dt=500A/µs
IF=-14A, dI/dt=500A/µs
26
80
40
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qrr
120
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON7407
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
60
40
20
0
-8V
VDS=-5V
-2.5V
-3V
-4.5V
-1.8V
-1.5V
125°C
25°C
VGS=-1V
4
0
1
2
3
5
0
0.5
1
1.5
2
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
14
12
10
8
1.6
1.4
1.2
1
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
ID=-14A
VGS=-2.5V
ID=-13A
VGS=-1.8V
ID=-11A
VGS=-4.5V
6
4
0.8
0
5
10
15
20
25
30
0
25
50
75
100 125 150 175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
25
1.0E+02
1.0E+01
ID=-14A
20
15
10
5
125°C
25°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics (Note
E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON7407
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
4000
3500
3000
2500
2000
1500
1000
500
VDS=-10V
ID=-14A
Ciss
Coss
Crss
0
0
5
10
15
20
0
10
20
30
40
50
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
40
0.1
0
0.0
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating
Junction-to-Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.2°C/W
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AON7407
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
40
30
20
10
0
T=25°C
TA=100°C
TA=150°C
TA=125°C
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
CASE (°C)
Figure 13: Power De-rating (Note F)
50
40
30
20
10
0
10000
1000
100
10
TA=25°
1
0
25
50
75
100
125
150
0.00001
0.001
0.1
10
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating
Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=75°C/W
R
0.1
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
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AON7407
20V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
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