AOP609 [FREESCALE]
Complementary Enhancement; 加强互补
| 型号： | AOP609 |
| 厂家： | 
Freescale |
| 描述： | Complementary Enhancement |
| 文件： | 总7页 (文件大小：579K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOP609
Complementary Enhancement
Mode Field Effect Transistor
General Description
The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs
may be used in H-bridge, Inverters and other
applications. Standard Product AOP609 is Pb-
free (meets ROHS & Sony 259 specifications).
Features
n-channel
p-channel
-60V
VDS (V) = 60V
ID = 4.7A (VGS=10V)
RDS(ON)
-3.5A (VGS=-10V)
RDS(ON)
< 60mΩ (VGS=10V)
< 75mΩ (VGS=4.5V)
< 115mΩ (VGS =-10V)
< 140mΩ (VGS =-4.5V)
D2
S2
D1
S1
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
PDIP-8
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
60
±20
-60
±20
V
V
VGS
TA=25°C
TA=70°C
4.7
-3.5
Continuous Drain
Current A
Pulsed Drain Current B
A
ID
3.8
-2.9
IDM
20
-20
TA=25°C
TA=70°C
2.5
2.5
PD
W
Power Dissipation
1.6
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
37
74
28
35
73
32
Max Units
50 °C/W
90 °C/W
40 °C/W
50 °C/W
90 °C/W
40 °C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
RθJL
RθJA
RθJL
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
1/7
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AOP609
Complementary Enhancement
Mode Field Effect Transistor
N Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
VDS=48V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
250
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.5
20
2.4
3
V
A
V
V
GS=10V, VDS=5V
GS=10V, ID=4.7A
49
65
60
75
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
V
GS=4.5V, ID=3.0A
DS=5V, ID=4.7A
57
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
17
S
V
A
IS=1A,VGS=0V
0.78
1
Maximum Body-Diode Continuous Current
3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
450
74
570
2
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
30
VGS=0V, VDS=0V, f=1MHz
1.65
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5.1
2.5
1
7
3
nC
nC
nC
nC
ns
V
GS=10V, VDS=30V, ID=4.7A
Qgd
1.4
5.4
5.5
17.2
2.9
25.4
29.4
tD(on)
tr
tD(off)
tf
VGS=10V, VDS=30V, RL=6Ω,
RGEN=3Ω
ns
ns
ns
trr
IF=4.7A, dI/dt=100A/µs
IF=4.7A, dI/dt=100A/µs
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 2 : Sept 2007
2/7
www.freescale.net.cn
AOP609
Complementary Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
25
20
15
10
5
15
10
5
10.0V
VDS=5V
5.0V
4.5V
125°C
4.0V
25°C
VGS=3.5V
4
0
0
0
1
2
3
5
1
1.5
2
2.5
3
3.5
4
V
DS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
80
70
60
50
40
30
20
2.2
2
VGS=10V
ID=4.7A
VGS=4.5V
1.8
1.6
1.4
1.2
1
VGS=4.5
ID=3A
VGS=10V
0.8
0.6
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
160
140
120
100
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=4.7A
125°C
125°
25°C
25°C
60
40
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/7
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AOP609
Complementary Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
800
VDS=30V
ID= 4.7A
600
400
200
0
Ciss
6
4
Coss
Crss
2
0
0
10
20
30
DS (Volts)
40
50
60
0
1
2
3
4
5
6
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
30
20
10
0
100µs
10µs
10ms
0.1s
1ms
10s
1s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/7
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AOP609
Complementary Enhancement
Mode Field Effect Transistor
P-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
V
VDS=-48V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
100
VGS(th)
ID(ON)
-1.5
-20
-1.8
-3
V
A
V
GS=-10V, ID=-3.5A
95
133
112
9
115
140
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=-4.5V, ID=-2.8A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-3.5A
IS=-1A,VGS=0V
S
V
A
-0.77
-1
Maximum Body-Diode Continuous Current
-3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
897
88
1080
9
pF
pF
pF
Ω
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
36
7.2
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
8.1
3.9
1.4
1.7
9
10
5
nC
nC
nC
nC
ns
V
GS=-10V, VDS=-30V, ID=-3.5A
Qgd
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-30V, RL=8.1Ω,
RGEN=3Ω
7.2
35
ns
ns
25.5
25.8
28.8
ns
trr
IF=-3.5A, dI/dt=100A/µs
IF=-3.5A, dI/dt=100A/µs
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any givenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µspulses, dutycycle0.5%max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev2:Sept 2007
5/7
www.freescale.net.cn
AOP609
Complementary Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
15
12
9
30
25
20
15
10
5
-10V
VDS=-5V
-6.0V
-5.0V
-4.5V
-4.0V
6
-3.5V
125°C
2
3
VGS=-3.0V
4
25°C
0
0
0
1
2
3
-VDS (Volts)
Fig 1: On-Region Characteristics
5
0
1
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics
120
2
VGS=-10V
ID=-3.5A
1.8
1.6
1.4
1.2
1
VGS=-4.5V
110
100
90
VGS=-4.5V
ID=-2.8A
VGS=-10V
0.8
0.6
80
-50 -25
0
25
50
75 100 125 150
0
2
4
6
8
10
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-3.5A
125°C
180
160
140
120
100
80
125°C
25°C
25°C
60
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
6/7
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AOP609
Complementary Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1200
1000
800
600
400
200
0
VDS=-30V
ID=-3.5A
Ciss
8
6
4
Coss
2
Crss
0
0
2
4
6
8
10
0
10
20
30
-VDS (Volts)
40
50
60
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C, TA=25°C
RDS(ON)
TJ(Max)=150°C
TA=25°C
10µs
100µs
1ms
limited
10ms
0.1s
DC
1s
10s
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
7/7
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