AOT11S60 [FREESCALE]

600V 11A a MOS TM Power Transistor; 600V 11A的MOS TM功率晶体管


型号：	AOT11S60
厂家：	Freescale
描述：	600V 11A a MOS TM Power Transistor 600V 11A的MOS TM功率晶体管晶体晶体管
文件：	总6页 (文件大小：610K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AOT11S60/AOB11S60/AOTF11S60

600V 11A

MOS ^TMPower Transistor

General Description

The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOS^TMhigh voltage

performance and robustness in switching applications.

process that is designed to deliver high levels of

By providing low R_DS(on), Q_gand E_OSSalong with guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

Features

V_DS@ T_j,max

700V

45A

I_DM

R_DS(ON),max

Q_g,typ

0.399Ω

11nC

2.7µJ

E_oss@ 400V

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT11S60/AOB11S60

AOTF11S60

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

V_GS

±30

T_C=25°C

11*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

T_C=25°C

E_AR

E_AS

120

W/ ^oC

178

P_D

Power Dissipation ^B

Derate above 25^oC

1.4

100

0.3

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt ^H

dv/dt

V/ns

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^J

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

AOT11S60/AOB11S60

AOTF11S60

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

0.7

°C/W

Maximum Junction-to-Case

3.25

* Drain current limited by maximum junction temperature.

1/6

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AOT11S60/AOB11S60/AOTF11S60

600V 11A

MOS ^TMPower Transistor

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V, T_J=25°C

I_D=250µA, V_GS=0V, T_J=150°C

V_DS=600V, V_GS=0V

600

700

BV_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

650

I_DSS

µA

V_DS=480V, T_J=150°C

I_GSS

V_DS=0V, V_GS=±30V

Gate-Body leakage current

Gate Threshold Voltage

±100

4.1

nΑ

V_GS(th)

V_DS=5V, I_D=250µA

2.8

3.5

V_GS=10V, I_D=3.8A, T_J=25°C

0.35 0.399

Ω

R_DS(ON)

Static Drain-Source On-Resistance

V_GS=10V, I_D=3.8A, T_J=150°C

0.98

1.11

I_S=5.5A,V_GS=0V, T_J=25°C

V_SD

I_S

Diode Forward Voltage

0.84

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current^C

I_SM

DYNAMIC PARAMETERS

C_iss

Input Capacitance

Output Capacitance

545

V_GS=0V, V_DS=100V, f=1MHz

C_oss

37.3

Effective output capacitance, energy

related ^H

C_o(er)

C_o(tr)

30.8

93.6

V_GS=0V, V_DS=0 to 480V, f=1MHz

Effective output capacitance, time

related ^I

V_GS=0V, V_DS=100V, f=1MHz

V_GS=0V, V_DS=0V, f=1MHz

C_rss

R_g

Reverse Transfer Capacitance

Gate resistance

1.42

16.5

Ω

SWITCHING PARAMETERS

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

2.8

3.8

V_GS=10V, V_DS=480V, I_D=5.5A

V_GS=10V, V_DS=400V, I_D=5.5A,

R_G=25Ω

t_D(off)

t_f

t_rr

I_F=5.5A,dI/dt=100A/µs,V_DS=400V

250

Body Diode Reverse Recovery Time

Peak Reverse Recovery Current

I_rm

Q_rr

3.3

µC

Body Diode Reverse Recovery Charge

A. The value of R _θJAis measured with the device in a still air environment with T _A=25°C.

B. The power dissipation P_Dis based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T_J

=25°C.

D. The R _θJAis the sum of the thermal impedance from junction to case R _θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. L=60mH, I_AS=2A, V_DD=150V, Starting T_J=25°C

H. C_o(er)is a fixed capacitance that gives the same stored energy as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS.

I. C_o(tr)is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS.

J. Wavesoldering only allowed at leads.

2/6

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AOT11S60/AOB11S60/AOTF11S60

600V 11A

MOS ^TMPower Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10V

5.5V

V_GS=4.5V

_DS(Volts)

V_DS(Volts)

Figure 2: On-Region Characteristics@125°C

Figure 1: On-Region Characteristics@25°C

100

1.2

0.9

0.6

0.3

0.0

-55°C

V_DS=20V

125°C

V_GS=10V

25°C

0.1

0.01

I_D(A)

V_GS(Volts)

Figure 3: Transfer Characteristics

Figure 4: On-Resistance vs. Drain Current and

Gate Voltage

1.2

1.1

2.5

V_GS=10V

I_D=3.8A

1.5

0.9

0.8

0.5

-100

-50

100

150

200

-100

-50

Temperature (°C)

Figure 5: On-Resistance vs. Junction Temperature

100

150

200

T_J(^oC)

Figure 6: Break Down vs. Junction Temperature

3/6

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AOT11S60/AOB11S60/AOTF11S60

600V 11A

MOS ^TMPower Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

V_DS=480V

I_D=5.5A

25°C

0.0

0.2

0.4

0.6

0.8

1.0

V_SD(Volts)

Q_g(nC)

Figure 7: Body-Diode Characteristics (Note E)

Figure 8: Gate-Charge Characteristics

10000

1000

100

C_iss

E_oss

C_oss

C_rss

100

200

V_DS(Volts)

Figure 10: Coss stored Energy

300

400

500

600

100

200

300

400

500

600

V_DS(Volts)

Figure 9: Capacitance Characteristics

100

10µs

R_DS(ON)

limited

R_DS(ON)

10µs

limited

100µs

1ms

10ms

0.1s

1ms

10ms

0.1

0.01

0.1

0.01

T_J(Max)=150°C

T_C=25°C

T_J(Max)=150°C

T_C=25°C

100

1000

0.1

100

1000

V_DS(Volts)

Figure 11: Maximum Forward Biased Safe

Operating Area for AOT(B)11S60 (Note F)

Figure 12: Maximum Forward Biased Safe

Operating Area for AOTF11S60(Note F)

4/6

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AOT11S60/AOB11S60/AOTF11S60

600V 11A

MOS ^TMPower Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120

100

125

150

175

100

125

150

T_CASE(°C)

Figure 13: Avalanche energy

Figure 14: Current De-rating (Note B)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

0.1

R_θJC=0.7°C/W

P_D

0.01

0.001

T_on

Single Pulse

0.0001

0.000001

0.00001

0.001

0.01

0.1

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)11S60 (Note F)

D=T_on/T

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

_θJC=3.25°C/W

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

P_D

0.01

0.001

T_on

Single Pulse

0.001

0.00001

0.0001

0.01

0.1

100

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF11S60 (Note F)

5/6

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AOT11S60/AOB11S60/AOTF11S60

600V 11A

MOS ^TMPower Transistor

Gate Charge Test Circuit &Waveform

Vgs

10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Vds

Charge

Resistive Switching Test Circuit & Waveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t _d(on)

t _d(off)

t _on

t_off

Unclamped Inductive Switching (UIS) Test Circuit& Waveforms

E_AR=1/2LI

BV_DSS

Vds

Vgs

Vdd

I_AR

Vgs

VDC

DUT

Vgs

Diode RecoveryTest Circuit &Waveforms

Q_rr=- Idt

Vds +

Vds -

DUT

Vgs

Isd

t_rr

I_F

Isd

dI/dt

I_RM

Vdd

Vgs

VDC

Vdd

Vds

6/6

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AOT11S60 [FREESCALE]

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