MC4822 [FREESCALE]
Dual N-Channel 30-V (D-S) MOSFET High performance trench technology; 双N通道30 -V （ DS ） MOSFET高性能沟道技术
| 型号： | MC4822 |
| 厂家： | 
Freescale |
| 描述： | Dual N-Channel 30-V (D-S) MOSFET High performance trench technology |
| 文件： | 总6页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4822/MC4822
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
PRODUCT SUMMARY
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m(Ω)
ID (A)
10
13.5 @ VGS = 10V
20 @ VGS = 4.5V
30
8
1
2
3
4
8
7
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
6
5
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
±20
TA=25oC
TA=70oC
10
8.2
±50
2.3
2.1
1.3
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
A
W
oC
TA=25oC
TA=70oC
Power Dissipationa
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJC
Maximum Units
Maximum Junction-to-Casea
oC/W
t <= 5 sec
t <= 5 sec
40
Maximum Junction-to-Ambienta
oC/W
60
RθJA
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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Freescale
AO4822/MC4822
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
30
V
1
±100 nA
V
DS = 24 V, VGS = 0 V
1
IDSS
Zero Gate Voltage Drain Current
On-State Drain CurrentA
uA
25
VDS = 24 V, VGS = 0 V, TJ = 55oC
ID(on)
VDS = 5 V, VGS = 10 V
20
A
V
GS = 10 V, ID = 10 A
13.5
20
Drain-Source On-ResistanceA
Forward TranconductanceA
V
GS = 4.5 V, ID = 8 A
rDS(on)
mΩ
VGS = 10 V, ID = 15 A, TJ = 55oC
15
gfs
VSD
ISM
VDS = 15 V, ID = 10 A
IS = 2.3 A, VGS = 0 V
40
0.7
5
S
Diode Forward Voltage
V
A
Pulsed Source Current (Body Diode)A
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
20
7.0
7.0
20
9
VDS = 15 V, VGS = 5 V,
ID = 10 A
nC
nS
VDD = 25 V, RL = 25 Ω , I
GEN = 10 V
D
= 1 A,
V
Turn-Off Delay Time
Fall-Time
td(off)
tf
70
20
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
rther notice to any products herein. RF EESCALE makes no
FREESCALE reserves the right to make changes without fu
warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
claim alleges that freescale was negligent regarding the
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Freescale
AO4822/MC4822
Typical Electrical Characteristics (N-Channel)
50
40
30
20
10
0
2
1.7
1.4
1.1
0.8
0.5
VGS = 10V
6.0V
4.0V
4.5V
6.0V
3.0V
10V
0
0.5
1
1.5
2
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
1.6
1.4
0.05
VGS = 10V
ID = 10A
ID = 10A
0.04
1.2
0.03
0.02
1.0
TA = 25oC
0.8
0.6
0.01
0
-50
-25
0
25
50
75
100 125 150
2
4
6
8
10
TJ Juncation Temperature (C)
VGS, Gate To Source Voltage (V)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
100
10
VD=5V
-55C
VGS = 0V
50
40
30
20
10
25C
TA = 125oC
1
12 5 C
0.1
25oC
0.01
0.001
0.0001
0
0
1
2
3
4
5
6
V
GS Gate to So urce Vo ltage (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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Freescale
AO4822/MC4822
Typical Electrical Characteristics (N-Channel)
10
1600
1200
800
400
0
ID=10a
f = 1MHz
GS = 0 V
V
8
6
4
2
0
Ciss
Coss
Crss
0
5
10
15
20
25
30
0
4
8
12
16
20
24
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, Gate Charge (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
50
2.4
SINGLE PULSE
RqJA = 125C/W
TA = 25C
VDS = VGS
2.2
ID = 250mA
40
30
20
10
0
2
1.8
1.6
1.4
1.2
1
-50 -25
0
25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (oC)
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 9. Threshold Vs Ambient Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D = 0.5
RqJA(t) = r(t) * RqJA
RqJA = 125 C/W
0.2
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
0.001
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
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Freescale
AO4822/MC4822
Package Information
SO-8: 8LEAD
H x 45°
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Freescale
AO4822/MC4822
Ordering information
• AM4910N-T1-XX
– A: Analog Power
– M: MOSFET
– 4910: Part number
– N: N-Channel
– T1: Tape & reel
– XX: Blank:
PF:
Standard
Leadfree
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