MC4826 [FREESCALE]
N-Channel 60-V (D-S) MOSFET High performance trench technology; N通道60 -V （ DS ） MOSFET高性能沟道技术
| 型号： | MC4826 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 60-V (D-S) MOSFET High performance trench technology |
| 文件： | 总3页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4826/MC4826
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
35 @ VGS = 10V
45 @ VGS = 4.5V
ID (A)
±6.4
60
±5.6
1
2
3
4
8
7
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
6
5
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
60
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
±20
TA=25oC
TA=70oC
±6.4
±5.2
±40
2
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
IDM
IS
A
TA=25oC
TA=70oC
2.1
1.3
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
Maximum Units
oC/W
t <= 10 sec
Steady State
62.5
oC/W
110
Maximum Junction-to-Ambienta
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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Freescale
AO4826/MC4826
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
1
±100
1
Gate-Body Leakage
nA
uA
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55oC
Zero Gate Voltage Drain Current
IDSS
10
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.4 A
VGS = 4.5 V, ID = 5.6 A
20
A
35
45
Drain-Source On-ResistanceA
rDS(on)
mΩ
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 15 V, ID = 6.4 A
IS = 2.0 A, VGS = 0 V
11
S
VSD
1.2
V
Dynamicb
Total Gate Charge
Qg
Qgs
Qgd
12.5
2.4
VDS = 30 V, VGS = 4.5 V,
ID = 6.4 A
nC
nS
Gate-Source Charge
Gate-Drain Charge
2.6
Switching
Turn-On Delay Time
td(on)
tr
td(off)
tf
11
8
D
Rise Time
VDD = 30 V, RL = 30 Ω , I = 1 A,
GEN
V
= 10 V
Turn-Off Delay Time
Fall-Time
19
6
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
rther notice to any products herein. RF EESCALE makes no
FREESCALE reserves the right to make changes without fu
warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
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claim alleges that freescale was negligent regarding the
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Freescale
AO4826/MC4826
Package Information
SO-8: 8LEAD
H x 45°
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