MC6405 [FREESCALE]

P-Channel 30-V (D-S) MOSFET Battery Powered Instruments; P通道30 -V ( DS ) MOSFET电池供电仪表
MC6405
型号: MC6405
厂家: Freescale    Freescale
描述:

P-Channel 30-V (D-S) MOSFET Battery Powered Instruments
P通道30 -V ( DS ) MOSFET电池供电仪表

电池 仪表
文件: 总5页 (文件大小:587K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Freescale  
AO6405/MC6405  
P-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
Key Features:  
rDS(on) (mΩ)  
VDS (V)  
-30  
ID(A)  
-5  
Low rDS(on) trench technology  
Low thermal impedance  
Fast switching speed  
54 @ VGS = -10V  
75 @ VGS = -4.5V  
-4.2  
Typical Applications:  
Battery Powered Instruments  
Portable Computing  
TSOP-6  
Mobile Phones  
GPS Units and Media Players  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
Limit  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
-30  
V
VGS  
±20  
TA=25°C  
TA=70°C  
-5  
Continuous Drain Current a  
Pulsed Drain Current b  
Continuous Source Current (Diode Conduction) a  
ID  
A
-4  
-20  
IDM  
IS  
2.4  
A
TA=25°C  
TA=70°C  
2
Power Dissipation a  
PD  
W
°C  
1.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum  
Units  
t <= 10 sec  
Steady State  
62.5  
RθJA  
Maximum Junction-to-Ambient a  
°C/W  
110  
Notes  
a.  
Surface Mounted on 1” x 1” FR4 Board.  
b.  
Pulse width limited by maximum junction temperature  
www.freescale.net.cn  
1
Freescale  
AO6405/MC6405  
Electrical Characteristics  
Parameter  
Symbol  
Test Conditions  
Static  
Min  
Typ  
Max  
Unit  
VGS(th)  
IGSS  
VDS = VGS, ID = -250 uA  
VDS = 0 V, VGS = ±20 V  
VDS = -24 V, VGS = 0 V  
VDS = -24 V, VGS = 0 V, TJ = 55°C  
VDS = -5 V, VGS = -4.5 V  
VGS = -10 V, ID = -4 A  
VGS = -4.5 V, ID = -3.6 A  
VDS = -15 V, ID = -4 A  
IS = 1.2 A, VGS = 0 V  
Dynamic  
Gate-Source Threshold Voltage  
Gate-Body Leakage  
1
V
±100  
1
nA  
IDSS  
ID(on)  
Zero Gate Voltage Drain Current  
On-State Drain Current  
uA  
A
10  
10  
54  
75  
rDS(on)  
Drain-Source On-Resistance  
mΩ  
gfs  
Forward Transconductance  
Diode Forward Voltage  
11  
S
V
VSD  
0.78  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
4.9  
1.7  
VDS = -15 V, VGS = -4.5 V, ID = -4 A  
nC  
ns  
2.3  
3.9  
VDD = -15 V, RL = 3.8 Ω, ID = -4 A,  
VGEN = -10 V, RGEN = 6 Ω  
11.7  
19.1  
10.1  
356  
38  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VDS = -15 V, VGS = 0 V, f = 1 MHz  
pF  
17  
Notes  
a. Pulse test: PW <= 300us duty cycle <= 2%.  
b. Guaranteed by design, not subject to production testing.  
FREESCALE reserves the right to make changes without further notice to any products herein. FREESCALE makes no warranty,  
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising out  
representation  
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,  
consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary  
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale  
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation  
where personal injury or death may occur. Should Buyer purchase or use freescale products for any such unintended or unauthorized application,  
Buyer shall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,  
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated  
with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part.  
freescale is an Equal Opportunity/Affirmative Action Employer.  
www.freescale.net.cn  
2
Freescale  
AO6405/MC6405  
Typical Electrical Characteristics  
6
0.2  
0.18  
0.16  
0.14  
0.12  
0.1  
TJ = 25°C  
5
3.5 V  
4
3
2
1
0
4.5 V  
0.08  
0.06  
0.04  
0.02  
6V, 8V, 10V  
0
0
0
0
0
1
2
3
4
1
2
3
4
5
6
ID-Drain Current (A)  
VGS - Gate-to-Source Voltage (V)  
1. On-Resistance vs. Drain Current  
2. Transfer Characteristics  
10  
1
0.3  
0.25  
0.2  
TJ = 25°C  
ID = -4A  
TJ = 25°C  
0.15  
0.1  
0.1  
0.01  
0.05  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
2
4
6
8
10  
VGS - Gate-to-Source Voltage (V)  
VSD - Source-to-Drain Voltage (V)  
3. On-Resistance vs. Gate-to-Source Voltage  
4. Drain-to-Source Forward Voltage  
4
3.5  
3
500  
400  
300  
200  
100  
0
10V, 8V, 6V  
4.5 V  
F = 1MHz  
Ciss  
3.5V  
2.5  
2
1.5  
1
Coss  
Crss  
0.5  
0
0
0.2  
0.4  
0.6  
0.8  
5
10  
15  
20  
VDS - Drain-to-Source Voltage (V)  
VDS-Drain-to-Source Voltage (V)  
5. Output Characteristics  
6. Capacitance  
www.freescale.net.cn  
3
Freescale  
AO6405/MC6405  
Typical Electrical Characteristics  
10  
2
VDS = -15V  
ID = -4 A  
9
8
7
6
5
4
3
2
1
0
1.5  
1
0.5  
0
1
2
3
4
5
6
7
8
9
10 11  
-50 -25  
0
25  
50  
75 100 125 150  
Qg - Total Gate Charge (nC)  
TJ -JunctionTemperature(°C)  
7. Gate Charge  
8. Normalized On-Resistance Vs  
Junction Temperature  
100  
10  
40  
35  
30  
25  
20  
15  
10  
5
10 uS  
100 uS  
1 mS  
10 mS  
100 mS  
1 SEC  
10 SEC  
100 SEC  
DC  
1
0.1  
0.01  
Idm limit  
Limited  
by RDS  
0
0.1  
1
10  
100  
0.001 0.01  
0.1  
1
10  
100  
1000  
VDS Drain to Source Voltage (V)  
t1 TIME (SEC)  
9. Safe Operating Area  
10. Single Pulse Maximum Power Dissipation  
1
0.1  
D = 0.5  
0.2  
RθJA(t) = r(t) x RθJA  
RθJA = 110 °C /W  
0.1  
0.05  
0.02  
Single Pulse  
P(pk)  
0.01  
0.001  
t1  
t2  
TJ - TA = P x RθJA(t)  
Duty Cycle, D = t1 / t2  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1 TIME (sec)  
11. Normalized Thermal Transient Junction to Ambient  
www.freescale.net.cn  
4
Freescale  
AO6405/MC6405  
Package Information  
Note:  
1. All Dimension Are In mm.  
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not  
Exceed 0.10 mm Per Side.  
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar  
Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic  
Body.  
4. The Package Top May Be Smaller Than The Package Bottom.  
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess  
Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The  
Foot.  
www.freescale.net.cn  
5

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