MMG3010NT1 [FREESCALE]
Heterojunction Bipolar Transistor (InGaP HBT); 异质结双极晶体管（ InGaP HBT的）
| 型号： | MMG3010NT1 |
| 厂家： | 
Freescale |
| 描述： | Heterojunction Bipolar Transistor (InGaP HBT) |
| 文件： | 总12页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMG3010NT1
Rev. 1, 8/2005
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
MMG3010NT1
The MMG3010NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small-signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small-signal RF.
0-6000 MHz, 15 dB
17 dBm
Features
InGaP HBT
• Frequency: 0 to 6000 MHz
• P1dB: 17 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 31 dBm @ 900 MHz
• Single 5 Volt Supply
1
2
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• Pb-Free and RoHS Compliant
3
CASE 1514-01, STYLE 1
SOT-89
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
V
Characteristic
Symbol 900 2140 3500 Unit
MHz MHz
MHz
(2)
Supply Voltage
V
7
300
CC
CC
Small-Signal Gain
(S21)
G
15
-15
-25
17
14
-17
-25
16.5
30
12
dB
dB
dB
p
(2)
Supply Current
RF Input Power
I
mA
dBm
°C
P
in
10
Input Return Loss
(S11)
IRL
ORL
P1db
IP3
-22
-15
Storage Temperature Range
T
stg
-65 to +150
150
(3)
Junction Temperature
T
J
°C
Output Return Loss
(S22)
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
Power Output @1dB
Compression
15.5 dBm
exceed 150°C.
Third Order Output
Intercept Point
31
28
dBm
1. V = 5 Vdc, T = 25°C, 50 ohm system
CC
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 54 mA, T = 25°C)
CC
CC
C
(4)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
83
°C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)
CC
C
Characteristic
Symbol
Min
14
—
Typ
15
Max
—
Unit
dB
Small-Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
G
p
IRL
ORL
P1dB
IP3
-15
-25
17
—
dB
—
—
dB
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
—
—
dBm
dBm
dB
—
31
—
NF
—
4.5
54
—
(1)
Supply Current
I
46
—
63
—
mA
V
CC
(1)
Supply Voltage
V
CC
5
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3010NT1
RF Device Data
Freescale Semiconductor
2
Table 5. Functional Pin Description
2
Pin
Pin Function
Number
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
Machine Model (per EIA/JESD 22-A115)
Charge Device Model (per JESD 22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
MMG3010NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
20
15
10
5
T = 85°C
C
25°C
−10
S11
-40°C
−20
S22
−30
V
I
= 5 Vdc
= 54 mA
CC
V
CC
= 5 Vdc
CC
−40
0
1
2
3
4
0
1
2
3
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
17
16
19
18
17
16
15
14
13
12
900 MHz
15
14
13
2140 MHz
1960 MHz
2600 MHz
3500 MHz
12
V
= 5 Vdc
= 54 mA
CC
11
10
V
= 5 Vdc
= 54 mA
CC
I
CC
I
CC
0.5
1
1.5
2
2.5
3
3.5
8
9
10
11
12
13
14
15
16
P , OUTPUT POWER (dBm)
out
f, FREQUENCY (GHz)
Figure 4. Small-Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
36
100
90
80
70
60
50
40
30
20
10
0
33
30
27
24
21
V
= 5 Vdc
= 54 mA
CC
I
CC
1 MHz Tone Spacing
4
4.2
4.4
4.6
4.8
5
5.2
5.4
0
1
2
3
4
f, FREQUENCY (GHz)
V , COLLECTOR VOLTAGE (V)
CC
Figure 7. Third Order Output Intercept Point
versus Frequency
Figure 6. Collector Current versus Collector
Voltage
MMG3010NT1
RF Device Data
Freescale Semiconductor
4
50 OHM TYPICAL CHARACTERISTICS
36
33
30
33
32
31
30
29
28
27
24
21
V
= 5 Vdc
f = 900 MHz
CC
27
f = 900 MHz
1 MHz Tone Spacing
26
1 MHz Tone Spacing
−40
−20
0
20
40
60
80
100
4.9
4.95
5
5.05
5.1
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
V
, COLLECTOR VOLTAGE (V)
CC
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
5
10
−30
−40
−50
−60
−70
−80
4
10
V
= 5 Vdc
= 54 mA
CC
I
CC
f = 900 MHz
1 MHz Tone Spacing
3
10
120
125
130
135
140
145
150
6
−3
0
3
9
12
15
T , JUNCTION TEMPERATURE (°C)
J
P , OUTPUT POWER (dBm)
out
NOTE: The MTTF is calculated with V = 5 Vdc, I = 54 mA
CC CC
Figure 10. Third Order Intermodulation versus
Output Power
Figure 11. MTTF versus Junction Temperature
−20
8
V
CC
= 5 Vdc, I = 54 mA, f = 2140 MHz
CC
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−40
6
4
−50
−60
−70
2
0
V
= 5 Vdc
= 54 mA
CC
I
CC
0
1
2
3
4
−3
0
3
6
9
12
15
f, FREQUENCY (GHz)
P , OUTPUT POWER (dBm)
out
Figure 12. Noise Figure versus Frequency
Figure 13. Single-Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3010NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40-300 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 14. 50 Ohm Test Circuit Schematic
20
10
0
S21
R1
C4
C3
L1
−10
−20
−30
−40
S11
S22
C2
C1
V
= 5 Vdc
= 54 mA
CC
MMG30XX
Rev 2
I
CC
0
100
200
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
0.01 µF Chip Capacitors
Part Number
0603A103JAT2A
0603A102JAT2A
BK2125HM471
Manufacturer
AVX
C1, C2, C3
C4
L1
R1
1000 pF Chip Capacitor
470 nH Chip Inductor
0 W Chip Resistor
AVX
Taiyo Yuden
Panasonic
ERJ3GEY0R00V
MMG3010NT1
RF Device Data
Freescale Semiconductor
6
50 OHM APPLICATION CIRCUIT: 300-3600 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 17. 50 Ohm Test Circuit Schematic
20
10
0
S21
R1
C4
C3
L1
−10
−20
S11
S22
C2
C1
−30
−40
V
= 5 Vdc
= 54 mA
CC
MMG30XX
Rev 2
I
CC
300
800
1300
1800
2300
2800
3300
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
150 pF Chip Capacitors
Part Number
06035A151JAT2A
0603A103JAT2A
0603A102JAT2A
HK160856NJ-T
ERJ3GEY0R00V
Manufacturer
AVX
C1, C2
C3
0.01 µF Chip Capacitor
1000 pF Chip Capacitor
56 nH Chip Inductor
0 W Chip Resistor
AVX
C4
AVX
L1
Taiyo Yuden
Panasonic
R1
MMG3010NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S-Parameters at VCC = 5 Vdc, ICC = 54 mA, TC = 255C
S
11
S
21
S
12
S
22
f
GHz
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
0.1
0.15
0.2
0.18961
0.18946
0.18931
0.18916
0.18900
0.18887
0.18873
0.18856
0.18844
0.18829
0.18813
0.18799
0.18783
0.18769
0.18753
0.18738
0.18723
0.18703
0.18689
0.18674
0.18657
0.18643
0.18629
0.18613
0.18599
0.18582
0.18568
0.18567
0.18569
0.18591
0.18645
0.18767
0.18855
0.19030
0.19186
0.19364
0.19581
0.19775
0.20022
0.20274
0.20483
0.20673
0.21006
0.21183
0.21443
0.21661
174.356
172.591
170.087
168.286
166.103
163.926
161.691
159.363
157.207
154.948
152.775
150.556
148.43
6.08599
6.06991
6.05558
6.04027
6.03125
6.01832
6.00664
5.99750
5.98612
5.97231
5.95537
5.94078
5.92660
5.90891
5.88998
5.86905
5.84578
5.82588
5.80670
5.77963
5.75495
5.72982
5.70191
5.67762
5.65132
5.62394
5.59479
5.56625
5.54822
5.52432
5.49674
5.46526
5.43646
5.40925
5.38177
5.35341
5.32341
5.29221
5.25998
5.22900
5.20224
5.16895
5.13639
5.10466
5.07001
5.03818
176.121
173.709
171.476
169.492
167.447
165.299
163.288
161.184
159.055
157.036
154.979
152.921
150.895
148.835
146.803
144.751
142.751
140.772
138.776
136.782
134.777
132.79
0.10045
0.10051
0.10055
0.10060
0.10065
0.10069
0.10073
0.10078
0.10085
0.10090
0.10098
0.10111
0.10103
0.10115
0.10113
0.10130
0.10126
0.10142
0.10134
0.10156
0.10146
0.10159
0.10169
0.10184
0.10183
0.10196
0.10201
0.10211
0.10220
0.10258
0.10272
0.10283
0.10301
0.10315
0.10333
0.10340
0.10356
0.10384
0.10401
0.10405
0.10413
0.10441
0.10441
0.10468
0.10472
0.10489
-1.147
-1.684
-2.764
-3.23
0.01890
0.01961
0.02022
0.02108
0.02178
0.02240
0.02324
0.02417
0.02490
0.02589
0.02683
0.02784
0.02895
0.03030
0.03176
0.03328
0.03472
0.03683
0.03847
0.04077
0.04304
0.04551
0.04827
0.05112
0.05460
0.05759
0.06146
0.06306
0.06362
0.06362
0.06377
0.06570
0.06858
0.07094
0.07392
0.07711
0.08039
0.08395
0.08764
0.09155
0.09523
0.09969
0.10388
0.10812
0.11217
0.11632
-117.716
-119.073
-121.834
-123.647
-125.155
-127.572
-129.668
-131.224
-133.739
-135.854
-137.345
-139.784
-141.384
-143.84
0.25
0.3
-3.883
-4.61
0.35
0.4
-5.218
-5.914
-6.577
-7.176
-7.816
-8.444
-9.124
-9.76
0.45
0.5
0.55
0.6
0.65
0.7
0.75
0.8
146.278
144.103
142.071
140.126
138.174
136.334
134.574
132.862
131.57
-10.388
-11.106
-11.715
-12.347
-13.049
-13.635
-14.317
-14.945
-15.594
-16.271
-16.958
-17.615
-18.236
-18.888
-19.552
-20.344
-20.962
-21.702
-145.852
-147.52
0.85
0.9
-148.773
-150.721
-153.215
-155.358
-159.06
0.95
1
1.05
1.1
1.15
1.2
-162.691
-166.671
-170.497
-174.453
-178.275
178.051
174.258
170.85
130.147
128.841
127.621
126.515
125.418
124.471
123.602
122.392
120.668
119.047
130.817
128.866
126.933
124.986
123.074
121.175
119.257
117.274
115.354
113.429
1.25
1.3
1.35
1.4
1.45
1.5
1.55
1.6
163.521
160.673
158.125
1.65
1.7
117.338
115.719
114.043
112.379
110.938
109.449
108.079
106.526
105.054
103.673
102.263
100.83
111.53
109.673
107.795
105.878
104.011
102.117
100.28
98.422
96.556
94.728
92.885
91.074
89.25
-22.327
-23.09
155.716
153.133
151.055
148.881
147.016
145.259
143.574
141.882
140.434
138.992
137.594
136.199
134.891
133.499
1.75
1.8
-23.804
-24.547
-25.192
-25.884
-26.62
1.85
1.9
1.95
2
2.05
2.1
-27.296
-28.065
-28.819
-29.517
-30.238
-30.97
2.15
2.2
2.25
2.3
99.385
2.35
98.005
87.453
-31.768
MMG3010NT1
RF Device Data
Freescale Semiconductor
8
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S-Parameters at VCC = 5 Vdc, ICC = 54 mA, TC = 255C (continued)
S
11
S
21
S
12
S
22
f
GHz
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
2.4
2.45
2.5
0.21882
0.22193
0.22303
0.22524
0.22731
0.22921
0.23072
0.23259
0.23443
0.23625
0.23786
0.23979
0.24125
0.24422
0.24610
0.24792
0.25072
0.25383
0.25590
0.25874
0.26159
0.26531
0.26829
0.27180
0.27525
96.635
95.395
93.907
92.5
5.00516
4.97224
4.93831
4.90747
4.87540
4.84438
4.81170
4.77720
4.74514
4.71210
4.68334
4.64992
4.61988
4.58846
4.55812
4.52495
4.49699
4.46681
4.43561
4.40430
4.37458
4.34458
4.31385
4.28470
4.25389
85.611
83.821
82.052
80.256
78.504
76.72
0.10502
0.10521
0.10527
0.10541
0.10567
0.10587
0.10582
0.10600
0.10623
0.10637
0.10648
0.10664
0.10700
0.10702
0.10736
0.10733
0.10748
0.10765
0.10784
0.10813
0.10814
0.10821
0.10846
0.10856
0.10871
-32.469
-33.265
-34.008
-34.706
-35.467
-36.255
-37.021
-37.804
-38.579
-39.349
-40.152
-41.004
-41.819
-42.586
-43.392
-44.248
-45.078
-45.892
-46.753
-47.687
-48.565
-49.382
-50.314
-51.229
-52.108
0.12050
0.12557
0.12957
0.13384
0.13842
0.14269
0.14690
0.15188
0.15645
0.16075
0.16529
0.16969
0.17439
0.17909
0.18404
0.18914
0.19427
0.19983
0.20478
0.21036
0.21586
0.22115
0.22678
0.23264
0.23850
132.176
130.946
129.503
128.151
126.605
125.06
123.585
122.036
120.364
118.48
2.55
2.6
91.106
89.599
88.26
2.65
2.7
74.931
73.147
71.382
69.615
67.904
66.078
64.334
62.607
60.863
59.115
57.356
55.612
53.877
52.133
50.384
48.649
46.916
45.167
43.44
2.75
2.8
86.873
85.515
84.122
82.84
2.85
2.9
116.779
114.827
112.861
111.23
2.95
3
81.448
80.072
78.711
77.547
76.337
75.174
73.947
72.848
71.738
70.666
69.68
3.05
3.1
109.114
107.101
105.076
102.924
100.877
98.897
96.818
94.763
92.769
90.836
88.858
3.15
3.2
3.25
3.3
3.35
3.4
3.45
3.5
68.707
67.687
66.773
3.55
3.6
MMG3010NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
0.58
5.33
2.54
1.27
1.27
0.86
0.64
3.86
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
Recommended Solder Stencil
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3010NT1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
3
4
4.70
4.40
A
1.87
1.79
M
0.15
C A B
0.60
0.40
2X R0.15 TYP
B
1.70
1.40
°
2X 4 TYP
2.70
2.40
3
4
4.50
3.70
1.30
0.70
5
2X
1
2
3
M
0.20
C B
0.48
0.38
0.48
0.38
M
0.15
C A B
M
0.15
C A B
0.58
0.48
M
0.15
C A B
0.46
0.40
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE
BURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOES
NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD
FLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE.
4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMES
OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR
BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING
ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
°
2X 4 TYP
E.P.
2X R0.20
5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
4X
0.10 C
1.35
1.25
0.65
0.55
SEATING PLANE
C
1.50
1.50
1.65
1.55
STYLE 1:
PIN 1. RF INPUT
2. GROUND
3. RF OUTPUT
CASE 1514-01
ISSUE C
SOT-89
PLASTIC
BOTTOM VIEW
MMG3010NT1
RF Device Data
Freescale Semiconductor
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Document Number: MMG3010NT1
Rev. 1, 8/2005
相关型号：
MMG3013NT1
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1514-02, SOT- 89, 3 PIN
NXP
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