MMG3012NT1 [FREESCALE]
Heterojunction Bipolar Transistor Technology (InGaP HBT); 异质结双极晶体管技术（的InGaP HBT ）
| 型号： | MMG3012NT1 |
| 厂家： | 
Freescale |
| 描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| 文件： | 总15页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMG3012NT1
Rev. 5, 3/2008
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
MMG3012NT1
The MMG3012NT1 is a General Purpose Amplifier that is internally
input matched and internally output matched. It is designed for a broad
range of Class A, small-signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 0 to 6000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small-signal RF.
0 - 6000 MHz, 19 dB
18.5 dBM
InGaP HBT
Features
• Frequency: 0 - 6000 MHz
• P1dB: 18.5 dBm @ 900 MHz
• Small-Signal Gain: 19 dB @ 900 MHz
• Third Order Output Intercept Point: 34 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
1
2
3
CASE 1514-02, STYLE 1
SOT-89
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Symbol 900 2140 3500 Unit
Rating
Supply Voltage
Symbol
Value
Unit
V
MHz MHz
MHz
V
7
300
CC
CC
Small-Signal Gain
(S21)
G
19
-18
-18
18.5
34
15.8
-20
-12
19
13.4
dB
dB
p
Supply Current
I
mA
dBm
°C
RF Input Power
P
10
in
Input Return Loss
(S11)
IRL
ORL
P1db
IP3
-17
-16
18
Storage Temperature Range
T
stg
-65 to +150
150
(2)
Junction Temperature
T
°C
Output Return Loss
(S22)
dB
J
2. For reliable operation, the junction temperature should not
exceed 150°C.
Power Output @1dB
Compression
dBm
dBm
Third Order Output
Intercept Point
32
31
1. V = 5 Vdc, T = 25°C, 50 ohm system
CC
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 70 mA, T = 25°C)
CC
CC
C
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
85
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)
CC
C
Characteristic
Symbol
Min
17.5
—
Typ
19
Max
—
Unit
dB
Small-Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
G
p
IRL
ORL
P1dB
IP3
-18
-18
18.5
34
—
dB
—
—
dB
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
—
—
dBm
dBm
dB
—
—
NF
—
3.8
70
—
(1)
Supply Current
I
58
—
82
—
mA
V
CC
(1)
Supply Voltage
V
5
CC
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3012NT1
RF Device Data
Freescale Semiconductor
2
Table 5. Functional Pin Description
2
Pin
Pin Function
Number
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
Machine Model (per EIA/JESD 22-A115)
Charge Device Model (per JESD 22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
MMG3012NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
25
0
T = 85°C
−10
−20
−30
C
25°C
S22
20
15
10
S11
-40°C
V
= 5 Vdc
= 70 mA
CC
I
CC
V
= 5 Vdc
CC
−40
0
1
2
3
4
0
1
2
3
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
21
19
20
19
18
17
16
15
14
13
900 MHz
2140 MHz
1960 MHz
17
15
13
2600 MHz
3500 MHz
11
V
= 5 Vdc
= 70 mA
CC
V
= 5 Vdc
= 70 mA
9
7
CC
I
CC
I
CC
0.5
1
1.5
2
2.5
3
3.5
10
12
14
16
18
20
P
, OUTPUT POWER (dBm)
out
f, FREQUENCY (GHz)
Figure 4. Small-Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
36
100
80
33
30
60
40
20
0
27
24
21
V
= 5 Vdc
= 70 mA
CC
I
CC
1 MHz Tone Spacing
4
4.2
4.4
4.6
4.8
5
5.2
5.4
0
1
2
3
4
V
, COLLECTOR VOLTAGE (V)
CC
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3012NT1
RF Device Data
Freescale Semiconductor
4
50 OHM TYPICAL CHARACTERISTICS
36
35
34
33
30
33
32
31
30
27
24
21
V
= 5 Vdc
f = 900 MHz
CC
29
f = 900 MHz
1 MHz Tone Spacing
28
1 MHz Tone Spacing
−40
−20
0
20
40
60
80
100
4.9
4.95
5
5.05
5.1
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
V
, COLLECTOR VOLTAGE (V)
CC
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
5
10
10
10
−30
−40
−50
−60
−70
−80
4
V
= 5 Vdc
= 70 mA
CC
I
CC
f = 900 MHz
1 MHz Tone Spacing
3
120
125
130
135
140
145
150
9
0
3
6
12
15
T , JUNCTION TEMPERATURE (°C)
J
P
, OUTPUT POWER (dBm)
out
NOTE: The MTTF is calculated with V = 5 Vdc, I = 70 mA
CC CC
Figure 10. Third Order Intermodulation versus
Output Power
Figure 11. MTTF versus Junction Temperature
−20
8
V
= 5 Vdc
= 70 mA
CC
I
CC
f = 2140 MHz
−30
−40
6
4
2
0
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
−50
−60
−70
V
= 5 Vdc
= 70 mA
CC
I
CC
0
1
2
3
4
2
4
6
8
10
P , OUTPUT POWER (dBm)
out
12
14
16
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
Figure 13. Single-Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3012NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40-300 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 14. 50 Ohm Test Circuit Schematic
30
20
10
0
S21
R1
C4
C3
V
= 5 Vdc
= 70 mA
CC
L1
I
CC
−10
C2
C1
S22
−20
−30
−40
S11
MMG30XX
Rev 2
0
100
200
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
0.01 μF Chip Capacitors
Part Number
C0603C103J5RAC
C0603C102J5RAC
BK2125HM471-T
ERJ3GEY0R00V
Manufacturer
Kemet
C1, C2, C3
C4
L1
R1
1000 pF Chip Capacitor
470 nH Chip Inductor
0 W Chip Resistor
Kemet
Taiyo Yuden
Panasonic
MMG3012NT1
RF Device Data
Freescale Semiconductor
6
50 OHM APPLICATION CIRCUIT: 300-3600 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 17. 50 Ohm Test Circuit Schematic
30
20
10
S21
R1
C4
C3
L1
0
C2
C1
S22
−10
−20
−30
V
= 5 Vdc
= 70 mA
CC
S11
MMG30XX
Rev 2
I
CC
300
800
1300
1800
2300
2800
3300
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
150 pF Chip Capacitors
Part Number
C0603C151J5RAC
C0603C103J5RAC
C0603C102J5RAC
HK160856NJ-T
Manufacturer
Kemet
C1, C2
C3
0.01 μF Chip Capacitor
1000 pF Chip Capacitor
56 nH Chip Inductor
0 W Chip Resistor
Kemet
C4
Kemet
L1
Taiyo Yuden
Panasonic
R1
ERJ3GEY0R00V
MMG3012NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S-Parameters (V = 5 Vdc, I = 70 mA, T = 25°C, 50 Ohm System)
CC
CC
C
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
100
150
0.09174
0.09324
0.09550
0.09721
0.09703
0.09452
0.09430
0.09343
0.09237
0.09271
0.09245
0.09228
0.09283
0.09352
0.09460
0.09591
0.09731
0.09918
0.10165
0.10456
0.10530
0.10595
0.10816
0.11046
0.11249
0.11403
0.11488
0.11602
0.11686
0.11834
0.12187
0.12645
0.13047
0.13472
0.13990
0.14563
0.15160
0.15702
0.16308
0.16757
0.17315
0.17857
0.18449
0.18892
174.872
173.141
172.602
171.41
10.24140
10.19244
10.14549
10.09679
10.03727
9.99063
9.92113
9.84672
9.77362
9.68901
9.60244
9.51098
9.41347
9.31713
9.21226
9.10650
9.00381
8.89589
8.79066
8.67809
8.55853
8.43942
8.32401
8.21004
8.10074
7.98739
7.87293
7.75891
7.66911
7.55873
7.45808
7.35252
7.26057
7.16564
7.06852
6.96617
6.86978
6.77908
6.68747
6.60108
6.51391
6.42737
6.33611
6.24887
174.57
171.29
168.278
165.627
162.828
159.887
157.15
154.424
151.64
148.973
146.3
0.07096
0.07214
0.07255
0.07316
0.07333
0.07362
0.07387
0.07402
0.07435
0.07457
0.07487
0.07531
0.07577
0.07608
0.07652
0.07698
0.07747
0.07786
0.07831
0.07892
0.07939
0.07997
0.08032
0.08086
0.08142
0.08202
0.08247
0.08302
0.08384
0.08447
0.08501
0.08565
0.08616
0.08673
0.08733
0.08792
0.08860
0.08917
0.08980
0.09037
0.09093
0.09154
0.09210
0.09280
0.256
0.02426
0.03097
0.03654
0.04935
0.06092
0.06932
0.08063
0.09043
0.09911
0.10788
0.11655
0.12425
0.13246
0.13942
0.14612
0.15280
0.15946
0.16560
0.17180
0.17724
0.18362
0.18945
0.19501
0.20058
0.20635
0.21190
0.21733
0.22271
0.23416
0.23853
0.24236
0.24526
0.24807
0.25113
0.25379
0.25623
0.25716
0.25848
0.25937
0.26021
0.26130
0.26314
0.26471
0.26627
-90.895
-92.768
-94.818
-96.31
-0.171
-0.477
-0.245
-0.227
-0.511
-0.509
-0.582
-0.77
200
250
300
170.357
169.626
168.366
167.117
166.034
164.864
163.824
162.689
161.228
159.955
158.511
157.224
155.828
154.356
153.21
-98.961
-101.516
-104.01
-106.263
-108.791
-111.052
-113.69
350
400
450
500
550
-0.953
-0.984
-1.158
-1.362
-1.566
-1.748
-1.988
-2.17
600
650
143.642
141.059
138.481
135.934
133.403
130.913
128.468
126.065
123.674
121.296
118.934
116.631
114.349
112.14
-116.435
-119.102
-121.839
-124.764
-127.579
-130.497
-133.648
-136.717
-139.644
-142.827
-146.154
-149.409
-152.438
-155.584
-158.664
-161.631
-164.745
-166.394
-169.432
-172.577
-175.475
-178.453
178.712
175.901
173.194
170.619
168.384
166.234
164.169
162.354
160.699
159.323
157.768
700
750
800
850
900
950
-2.552
-2.748
-3.106
-3.413
-3.734
-4.033
-4.47
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
151.519
150.349
149.493
148.216
147.031
145.868
144.558
143.211
142.244
136.948
134.929
132.851
130.925
129.243
127.648
126.06
-4.792
-5.279
-5.657
-6.021
-6.437
-6.947
-7.329
-7.818
-8.268
-8.83
109.93
107.781
105.625
103.599
101.565
99.538
97.533
95.548
93.586
91.625
89.685
87.806
85.927
84.024
82.171
80.255
78.424
76.56
-9.205
-9.856
-10.316
-10.882
-11.465
-12.048
-12.637
-13.316
-13.944
-14.673
124.504
122.941
121.556
120.247
118.779
117.547
116.463
115.174
113.697
74.732
(continued)
MMG3012NT1
RF Device Data
Freescale Semiconductor
8
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S-Parameters (V = 5 Vdc, I = 70 mA, T = 25°C, 50 Ohm System) (continued)
CC
CC
C
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
2300
2350
2400
2450
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
3250
3300
3350
3400
3450
3500
3550
3600
0.19385
0.19754
0.20084
0.20423
0.20717
0.20983
0.21214
0.21446
0.21638
0.21837
0.22001
0.22117
0.22351
0.22552
0.22752
0.23097
0.23369
0.23656
0.23989
0.24360
0.24688
0.25052
0.25455
0.25901
0.26341
0.26813
0.27237
112.219
110.678
109.125
107.523
105.937
104.482
102.92
101.252
99.767
98.143
96.523
95.017
93.331
91.634
90.219
88.535
87.054
85.789
84.265
82.93
6.16340
6.07930
5.99646
5.91022
5.82783
5.75180
5.67379
5.59418
5.51853
5.44472
5.37675
5.30584
5.24121
5.17536
5.11494
5.05825
4.99713
4.94222
4.88930
4.83457
4.78423
4.73023
4.68010
4.63102
4.58330
4.53327
4.48601
72.929
71.134
69.327
67.546
65.858
64.078
62.378
60.667
58.949
57.276
55.629
53.932
52.348
50.712
49.089
47.462
45.82
0.09326
0.09383
0.09424
0.09462
0.09514
0.09561
0.09610
0.09647
0.09688
0.09737
0.09779
0.09840
0.09877
0.09912
0.09981
0.10036
0.10085
0.10141
0.10188
0.10239
0.10292
0.10350
0.10402
0.10446
0.10504
0.10524
0.10576
-15.366
-16.084
-16.717
-17.459
-18.149
-18.867
-19.566
-20.335
-21.012
-21.79
0.26829
0.27135
0.27492
0.27881
0.28300
0.28750
0.29276
0.29839
0.30389
0.30941
0.31537
0.32118
0.32764
0.33369
0.34034
0.34528
0.35126
0.35690
0.36188
0.36735
0.37180
0.37649
0.38152
0.38553
0.39006
0.39457
0.39878
156.541
155.373
154.124
153.075
151.824
150.28
148.947
147.403
145.776
143.933
142.001
140.215
138.273
136.168
134.188
132.091
129.624
127.421
125.127
122.986
120.634
118.449
116.317
114.07
-22.573
-23.199
-24.027
-24.843
-25.546
-26.365
-27.171
-27.968
-28.842
-29.629
-30.452
-31.434
-32.349
-33.239
-34.166
-35.066
-36.008
44.188
42.551
40.954
39.327
37.654
36.023
34.476
32.823
31.168
29.586
81.534
80.161
78.818
77.562
76.264
74.959
73.713
112.169
110.035
107.887
MMG3012NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
0.58
5.33
2.54
1.27
1.27
0.86
0.64
3.86
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
Recommended Solder Stencil
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3012NT1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
MMG3012NT1
RF Device Data
Freescale Semiconductor
11
MMG3012NT1
RF Device Data
Freescale Semiconductor
12
MMG3012NT1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
3
Mar. 2007
•
•
Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS
compliant part numbers, p. 6, 7
4
5
July 2007
Mar. 2008
Replaced Case Outline 1514-01 with 1514-02, Issue D, p. 1, 11-13. Case updated to add missing
dimension for Pin 1 and Pin 3.
•
Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
•
Corrected Fig. 13, Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power y-axis
(ACPR) unit of measure to dBc, p. 5
•
Corrected S-Parameter table frequency column label to read “MHz” versus “GHz” and corrected
frequency values from GHz to MHz, p. 8, 9
MMG3012NT1
RF Device Data
Freescale Semiconductor
14
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Document Number: MMG3012NT1
Rev. 5,3/2008
相关型号：
MMG3013NT1
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1514-02, SOT- 89, 3 PIN
NXP
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