MMG3011NT1_12 [FREESCALE]
Heterojunction Bipolar Transistor; 异质结双极晶体管![MMG3011NT1_12](http://pdffile.icpdf.com/pdf1/p00180/img/icpdf/MMG30_1012868_icpdf.jpg)
型号: | MMG3011NT1_12 |
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描述: | Heterojunction Bipolar Transistor |
文件: | 总15页 (文件大小:357K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Document Number: MMG3011NT1
Rev. 6, 2/2012
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
MMG3011NT1
The MMG3011NT1 is a general purpose amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as cellular,
P C S , B WA , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l
small--signal RF.
0--6000 MHz, 15 dB
15 dBm
Features
InGaP HBT
•
•
•
•
•
•
•
•
Frequency: 0 to 6000 MHz
P1dB: 15 dBm @ 900 MHz
Small--Signal Gain: 15 dB @ 900 MHz
Third Order Output Intercept Point: 28 dBm @ 900 MHz
Single 5 Volt Supply
Internally Matched to 50 Ohms
Cost--effective SOT--89 Surface Mount Package
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
1
2
3
CASE 1514--02, STYLE 1
SOT--89
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Supply Voltage
Symbol
Value
Unit
V
Characteristic
Symbol 900 2140 3500 Unit
MHz MHz
MHz
V
6
80
CC
CC
Small--Signal Gain
(S21)
G
15
-- 1 8
-- 2 5
15
14
12
dB
dB
dB
p
Supply Current
I
mA
dBm
°C
RF Input Power
P
10
in
Input Return Loss
(S11)
IRL
ORL
P1dB
OIP3
-- 2 5
-- 1 8
13.5
26.5
-- 2 5
-- 1 7
Storage Temperature Range
T
stg
--65 to +150
150
(2)
Junction Temperature
T
J
°C
Output Return Loss
(S22)
2. For reliable operation, the junction temperature should not
exceed 150°C.
Power Output @1dB
Compression
13.5 dBm
Third Order Output
Intercept Point
28
26
dBm
1. V = 5 Vdc, T = 25°C, 50 ohm system.
CC
A
Table 3. Thermal Characteristics
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
83
°C/W
JC
Case Temperature 87°C, 5 Vdc, 41 mA, no RF applied
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2005--2008, 2012. All rights reserved.
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)
CC
A
Characteristic
Symbol
Min
13.5
—
Typ
15
Max
—
Unit
dB
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
G
p
IRL
ORL
P1dB
OIP3
NF
-- 1 8
-- 2 5
15
—
dB
—
—
dB
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
—
—
dBm
dBm
dB
—
28
—
—
4.6
41
—
(1)
Supply Current
I
32
—
48
—
mA
V
CC
(1)
Supply Voltage
V
5
CC
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Functional Pin Description
2
Pin
Pin Function
Number
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
1A
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
A
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020
1
260
°C
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM TYPICAL CHARACTERISTICS
0
20
15
10
5
T
= 85°C
C
25°C
-- 1 0
S22
-- 4 0 °C
-- 2 0
S11
-- 3 0
V
= 5 Vdc
CC
V
= 5 Vdc
CC
-- 4 0
0
1
2
3
4
0
1
2
3
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small--Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
17
16
17
16
15
14
13
12
11
10
900 MHz
15
14
13
2140 MHz
1960 MHz
2600 MHz
3500 MHz
12
11
10
V
= 5 Vdc
3
V
= 5 Vdc
13
CC
CC
0.5
1
1.5
2
2.5
3.5
5
7
9
11
15
P
, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
out
Figure 4. Small--Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
30
80
70
60
50
40
30
20
10
0
27
24
21
18
15
V
= 5 Vdc
CC
1 MHz Tone Spacing
4
4.2
4.4
4.6
4.8
5
5.2
5.4
0
1
2
3
4
V
, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
CC
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
4
50 OHM TYPICAL CHARACTERISTICS
33
31
30
30
27
29
28
27
26
25
24
21
18
V
= 5 Vdc
CC
f = 900 MHz
1 MHz Tone Spacing
f = 900 MHz
1 MHz Tone Spacing
24
-- 4 0
-- 2 0
0
2 0
4 0
6 0
8 0
100
4.9
4.95
5
5.05
5.1
T, TEMPERATURE (_C)
V
, COLLECTOR VOLTAGE (V)
CC
Figure 9. Third Order Output Intercept Point
versus Case Temperature
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
5
4
3
10
10
10
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
V
= 5 Vdc
CC
f = 900 MHz
1 MHz Tone Spacing
120
125
130
135
140
145
150
3
-- 6
-- 3
0
6
9
12
T , JUNCTION TEMPERATURE (°C)
J
P
, OUTPUT POWER (dBm)
out
NOTE: The MTTF is calculated with V = 5 Vdc, I = 41 mA
Figure 10. Third Order Intermodulation Distortion
versus Output Power
CC
CC
Figure 11. MTTF versus Junction Temperature
-- 2 0
8
V
= 5 Vdc, f = 2140 MHz
CC
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
-- 3 0
-- 4 0
6
4
2
0
-- 5 0
-- 6 0
-- 7 0
V
= 5 Vdc
CC
0
1
2
3
4
-- 3
0
3
6
9
12
f, FREQUENCY (GHz)
P
, OUTPUT POWER (dBm)
out
Figure 12. Noise Figure versus Frequency
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM APPLICATION CIRCUIT: 40--300 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 14. 50 Ohm Test Circuit Schematic
20
10
0
S21
R1
C4
C3
L1
-- 1 0
-- 2 0
-- 3 0
-- 4 0
C2
C1
S22
S11
V
= 5 Vdc
MMG30XX
Rev 2
CC
0
100
200
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
0.01 μF Chip Capacitors
Part Number
C0603C103J5RAC
C0603C102J5RAC
BK2125HM471--T
ERJ3GEY0R00V
Manufacturer
Kemet
C1, C2, C3
C4
L1
R1
1000 pF Chip Capacitor
470 nH Chip Inductor
0 Ω Chip Resistor
Kemet
Taiyo Yuden
Panasonic
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
6
50 OHM APPLICATION CIRCUIT: 300--3600 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 17. 50 Ohm Test Circuit Schematic
20
10
0
S21
R1
C4
C3
L1
-- 1 0
-- 2 0
C2
C1
S22
S11
-- 3 0
-- 4 0
MMG30XX
Rev 2
V
= 5 Vdc
800
CC
300
1300
1800
2300
2800
3300
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
150 pF Chip Capacitors
Part Number
C0603C151J5RAC
C0603C103J5RAC
C0603C102J5RAC
HK160856NJ--T
Manufacturer
Kemet
C1, C2
C3
0.01 μF Chip Capacitor
1000 pF Chip Capacitor
56 nH Chip Inductor
0 Ω Chip Resistor
Kemet
C4
Kemet
L1
Taiyo Yuden
Panasonic
R1
ERJ3GEY0R00V
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S--Parameters (V = 5 Vdc, T = 25°C, 50 Ohm System)
CC
A
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
100
150
0.06552
0.06383
0.06269
0.06117
0.05981
0.05830
0.05702
0.05620
0.05480
0.05404
0.05345
0.05300
0.05301
0.05337
0.05401
0.05502
0.05607
0.05712
0.05849
0.06056
0.06216
0.06385
0.06581
0.06795
0.07029
0.06417
0.06615
0.06834
0.07037
0.06361
0.06510
0.06709
0.06871
0.07086
0.07328
0.07577
0.07845
0.08096
0.08378
0.08710
0.08957
0.09160
0.09580
0.09801
170.033
167.931
165.117
162.063
158.66
154.766
150.967
147.157
143.805
139.862
136.215
132.595
129.164
125.784
122.842
120.061
117.736
115.541
113.614
112.274
111.255
110.823
110.396
110.14
5.96942
5.93739
5.91539
5.89348
5.87619
5.86975
5.85785
5.84533
5.83028
5.81371
5.79406
5.77608
5.75924
5.73951
5.71885
5.69616
5.67188
5.65082
5.62851
5.60006
5.57557
5.55100
5.52258
5.49787
5.47256
5.44429
5.41593
5.38670
5.35727
5.33305
5.30415
5.26958
5.24166
5.21283
5.18411
5.15395
5.12325
5.09284
5.06020
5.03015
5.00175
4.96977
4.93541
4.90425
176.263
174.155
171.527
169.546
167.518
165.398
163.377
161.303
159.19
0.09975
0.09991
0.10015
0.10045
0.10063
0.10085
0.10108
0.10131
0.10142
0.10154
0.10159
0.10166
0.10172
0.10177
0.10184
0.10204
0.10209
0.10222
0.10236
0.10243
0.10254
0.10280
0.10297
0.10307
0.10327
0.10350
0.10367
0.10385
0.10409
0.10444
0.10462
0.10474
0.10505
0.10523
0.10547
0.10576
0.10592
0.10612
0.10637
0.10667
0.10686
0.10722
0.10725
0.10767
--0.816
--1.18
0.13385
0.13500
0.13601
0.13724
0.13832
0.14046
0.14191
0.14371
0.14461
0.14562
0.14624
0.14664
0.14651
0.14648
0.14551
0.14435
0.14281
0.14087
0.13859
0.13641
0.13320
0.12952
0.12567
0.12169
0.11718
0.11263
0.10814
0.10311
0.09824
0.09725
0.09352
0.09017
0.08614
0.08224
0.07847
0.07419
0.07045
0.06627
0.06270
0.05860
0.05542
0.05191
0.04928
0.04677
--2.955
--4.514
200
--2.477
--2.883
--3.34
--6.374
250
-- 9 . 6
300
--12.707
--14.848
--17.031
--19.568
--21.523
--23.875
--25.878
--28.005
--30.174
--32.244
--34.496
--36.557
--38.707
--40.982
--43.169
--45.576
--47.809
--50.265
--52.695
--55.267
--57.902
--60.543
--63.335
--66.301
--69.317
--65.446
--67.448
--69.038
--71.347
--73.345
--75.924
--78.51
350
--4.05
400
--4.506
--5.159
--5.766
--6.253
--6.83
450
500
550
157.192
155.172
153.133
151.135
149.108
147.093
145.064
143.066
141.112
139.109
137.159
135.169
133.202
131.231
129.289
127.359
125.432
123.531
121.627
119.73
600
650
--7.449
--7.985
--8.608
--9.178
--9.746
--10.319
--10.915
--11.506
--12.103
--12.71
--13.306
--13.892
--14.559
--15.203
--15.851
--16.46
--17.039
--17.682
--18.324
--18.939
--19.656
--20.294
--20.945
--21.577
--22.375
--23.012
--23.742
--24.419
--25.036
--25.835
--26.591
--27.253
--27.931
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
110.037
110.3
110.33
110.566
111.203
106.262
104.31
103.387
101.77
100.502
99.404
98.261
97.17
117.89
116
114.125
112.251
110.413
108.549
106.674
104.849
102.996
101.184
99.346
--81.64
96.588
95.835
94.791
94.206
93.044
92.472
91.352
--85.166
--88.825
--93.023
--97.743
--103.413
--109.11
--115.508
97.519
95.715
93.926
92.125
(continued)
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
8
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S--Parameters (V = 5 Vdc, T = 25°C, 50 Ohm System) (continued)
CC
A
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
2300
2350
2400
2450
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
3250
3300
3350
3400
3450
3500
3550
3600
0.10125
0.10384
0.10702
0.11008
0.11241
0.11540
0.11824
0.12090
0.12340
0.12606
0.12922
0.13144
0.13428
0.13713
0.13914
0.14320
0.14613
0.14898
0.15264
0.15656
0.15948
0.16325
0.16694
0.17113
0.17493
0.17906
0.18310
90.343
89.16
4.87215
4.84064
4.80597
4.77373
4.73852
4.71080
4.67765
4.64616
4.61372
4.58063
4.55022
4.51863
4.49057
4.45366
4.42536
4.39730
4.36561
4.33420
4.30556
4.27446
4.24479
4.21546
4.18743
4.15740
4.12688
4.09892
4.06981
90.327
88.561
86.77
0.10777
0.10817
0.10841
0.10869
0.10879
0.10916
0.10931
0.10958
0.10994
0.10994
0.11034
0.11063
0.11089
0.11109
0.11140
0.11161
0.11191
0.11211
0.11252
0.11258
0.11281
0.11317
0.11329
0.11352
0.11374
0.11391
0.11410
--28.67
0.04452
0.04294
0.04205
0.04158
0.04157
0.04231
0.04340
0.04508
0.04725
0.05010
0.05315
0.05620
0.06004
0.06342
0.06743
0.07181
0.07596
0.08043
0.08543
0.09047
0.09540
0.10082
0.10661
0.11195
0.11808
0.12404
0.13009
--122.296
--129.541
--138.1
--29.394
--30.211
--30.924
--31.661
--32.408
--33.203
--33.929
--34.621
--35.444
--36.246
--37.03
88.397
87.519
86.11
85.006
83.289
81.53
--146.363
--154.578
--162.984
--171.06
--178.591
174.366
167.162
160.781
154.624
149.451
144.065
138.972
134.77
85.045
83.877
82.346
81.156
79.687
78.399
77.016
75.734
74.325
72.892
71.422
70.248
69.069
67.768
66.632
65.655
64.574
63.679
62.876
62.049
61.193
60.522
79.803
78.061
76.324
74.605
72.881
71.172
69.495
67.734
66.061
64.387
62.698
61.007
59.316
57.648
55.984
54.301
52.638
50.961
49.288
47.63
--37.754
--38.64
--39.407
--40.164
--40.968
--41.861
--42.74
130.079
125.992
122.138
117.963
114.29
--43.528
--44.448
--45.247
--46.134
--46.992
--47.856
--48.768
--49.604
110.967
107.412
104.192
101.204
98.182
45.971
95.337
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
9
1.7
7.62
0.305 diameter
2.49
3.48
0.58
5.33
2.54
1.27
1.27
0.86
0.64
3.86
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
Recommended Solder Stencil
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
10
PACKAGE DIMENSIONS
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
11
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
12
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
•
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3100: General Purpose Amplifier and MMIC Biasing
Software
.s2p File
Development Tools
•
•
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
3
Mar. 2007
•
•
Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS
compliant part numbers, p. 6, 7
4
5
July 2007
Mar. 2008
Replaced Case Outline 1514--01 with 1514--02, Issue D, p. 1, 11--13. Case updated to add missing
dimension for Pin 1 and Pin 3.
•
•
•
Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
Corrected Fig. 13, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis
(ACPR) unit of measure to dBc, p. 5
Corrected S--Parameter table frequency column label to read “MHz” versus “GHz” and corrected
frequency values from GHz to MHz, p. 8, 9
6
Feb. 2012
•
•
Corrected temperature at which ThetaJC is measured from 25°C to 87°C and added “no RF applied” to
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no
RF signal applied, p. 1
Table 6, ESD Protection Characterization, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 3
•
•
Removed I bias callout from applicable graphs and Table 10, Common Emitter S--Parameters heading
CC
as bias is not a controlled value, p. 4--9
Added .s2p File availability to Product Software and Printed Circuit Boards to Development Tools, p. 14
MMG3011NT1
RF Device Data
Freescale Semiconductor, Inc.
14
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Document Number: MMG3011NT1
Rev. 6,2/2012
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MMG3013NT1
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1514-02, SOT- 89, 3 PIN
NXP
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